Effect of n-type transition metal dichalcogenide molybdenum telluride (n-MoTe2) in back contact interface of cadmium telluride solar cells from numerical analysis

N. Dhar, T. H. Chowdhury, M. A. Islam, N. A. Khan, M. J. Rashid, M. M. Alam, Z. A. Alothman, Kamaruzzaman Sopian, Nowshad Amin

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The effects of unintentionally formed n-type transition metal dichalcogenide namely molybdenum telluride (MoTe2) in between Cadmium Telluride (CdTe) absorber layer and Mo back contact is studied from numerical modeling and analysis. The main objective is to analyze the possible effects of n-MoTe2 formation in CdTe thin film solar cell. Energy band line-up of Mo/MoTe2/CdTe interface is investigated in order to explain the interface properties with different parameters. Carrier concentration, bandgap energy, electron affinity and thickness of n-MoTe2 have been varied in the numerical simulation to observe its effects on overall photovoltaic performance. The increase in the carrier concentration and bandgap energy of n-MoTe2 deteriorates the overall performance. This could be attributed to the high value of built-in-potential (Vbi) along with band offset value at n- MoTe2/p-CdTe interface, which causes the electrons to be drifted back towards the back contact and results in recombination. Advantageous effects are observed as the electron affinity of n-MoTe2 is increased. This can be explained by the lower value of band offset (ΔEC and ΔEV) at n-MoTe2/p-CdTe interface that interrupts the flow of carriers in overall circuit in a moderate way. Numerical results reveal that n-MoTe2 layer thinner than 50 nm affects adversely, possibly due to the shunting.

Original languageEnglish
Pages (from-to)271-279
Number of pages9
JournalChalcogenide Letters
Volume11
Issue number6
Publication statusPublished - 2014

Fingerprint

Cadmium telluride
tellurides
cadmium tellurides
Molybdenum
Interfaces (computer)
numerical analysis
molybdenum
Transition metals
Numerical analysis
Solar cells
solar cells
transition metals
Electron affinity
electron affinity
Carrier concentration
Energy gap
Band structure
energy bands
absorbers
cadmium telluride

Keywords

  • CdTe
  • Substrate configuration
  • Thin film solar cells

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Physics and Astronomy(all)

Cite this

Dhar, N., Chowdhury, T. H., Islam, M. A., Khan, N. A., Rashid, M. J., Alam, M. M., ... Amin, N. (2014). Effect of n-type transition metal dichalcogenide molybdenum telluride (n-MoTe2) in back contact interface of cadmium telluride solar cells from numerical analysis. Chalcogenide Letters, 11(6), 271-279.

Effect of n-type transition metal dichalcogenide molybdenum telluride (n-MoTe2) in back contact interface of cadmium telluride solar cells from numerical analysis. / Dhar, N.; Chowdhury, T. H.; Islam, M. A.; Khan, N. A.; Rashid, M. J.; Alam, M. M.; Alothman, Z. A.; Sopian, Kamaruzzaman; Amin, Nowshad.

In: Chalcogenide Letters, Vol. 11, No. 6, 2014, p. 271-279.

Research output: Contribution to journalArticle

Dhar, N, Chowdhury, TH, Islam, MA, Khan, NA, Rashid, MJ, Alam, MM, Alothman, ZA, Sopian, K & Amin, N 2014, 'Effect of n-type transition metal dichalcogenide molybdenum telluride (n-MoTe2) in back contact interface of cadmium telluride solar cells from numerical analysis', Chalcogenide Letters, vol. 11, no. 6, pp. 271-279.
Dhar, N. ; Chowdhury, T. H. ; Islam, M. A. ; Khan, N. A. ; Rashid, M. J. ; Alam, M. M. ; Alothman, Z. A. ; Sopian, Kamaruzzaman ; Amin, Nowshad. / Effect of n-type transition metal dichalcogenide molybdenum telluride (n-MoTe2) in back contact interface of cadmium telluride solar cells from numerical analysis. In: Chalcogenide Letters. 2014 ; Vol. 11, No. 6. pp. 271-279.
@article{c6b33663f05f4296a69c2ffe260ba167,
title = "Effect of n-type transition metal dichalcogenide molybdenum telluride (n-MoTe2) in back contact interface of cadmium telluride solar cells from numerical analysis",
abstract = "The effects of unintentionally formed n-type transition metal dichalcogenide namely molybdenum telluride (MoTe2) in between Cadmium Telluride (CdTe) absorber layer and Mo back contact is studied from numerical modeling and analysis. The main objective is to analyze the possible effects of n-MoTe2 formation in CdTe thin film solar cell. Energy band line-up of Mo/MoTe2/CdTe interface is investigated in order to explain the interface properties with different parameters. Carrier concentration, bandgap energy, electron affinity and thickness of n-MoTe2 have been varied in the numerical simulation to observe its effects on overall photovoltaic performance. The increase in the carrier concentration and bandgap energy of n-MoTe2 deteriorates the overall performance. This could be attributed to the high value of built-in-potential (Vbi) along with band offset value at n- MoTe2/p-CdTe interface, which causes the electrons to be drifted back towards the back contact and results in recombination. Advantageous effects are observed as the electron affinity of n-MoTe2 is increased. This can be explained by the lower value of band offset (ΔEC and ΔEV) at n-MoTe2/p-CdTe interface that interrupts the flow of carriers in overall circuit in a moderate way. Numerical results reveal that n-MoTe2 layer thinner than 50 nm affects adversely, possibly due to the shunting.",
keywords = "CdTe, Substrate configuration, Thin film solar cells",
author = "N. Dhar and Chowdhury, {T. H.} and Islam, {M. A.} and Khan, {N. A.} and Rashid, {M. J.} and Alam, {M. M.} and Alothman, {Z. A.} and Kamaruzzaman Sopian and Nowshad Amin",
year = "2014",
language = "English",
volume = "11",
pages = "271--279",
journal = "Chalcogenide Letters",
issn = "1584-8663",
publisher = "National Institute R and D of Materials Physics",
number = "6",

}

TY - JOUR

T1 - Effect of n-type transition metal dichalcogenide molybdenum telluride (n-MoTe2) in back contact interface of cadmium telluride solar cells from numerical analysis

AU - Dhar, N.

AU - Chowdhury, T. H.

AU - Islam, M. A.

AU - Khan, N. A.

AU - Rashid, M. J.

AU - Alam, M. M.

AU - Alothman, Z. A.

AU - Sopian, Kamaruzzaman

AU - Amin, Nowshad

PY - 2014

Y1 - 2014

N2 - The effects of unintentionally formed n-type transition metal dichalcogenide namely molybdenum telluride (MoTe2) in between Cadmium Telluride (CdTe) absorber layer and Mo back contact is studied from numerical modeling and analysis. The main objective is to analyze the possible effects of n-MoTe2 formation in CdTe thin film solar cell. Energy band line-up of Mo/MoTe2/CdTe interface is investigated in order to explain the interface properties with different parameters. Carrier concentration, bandgap energy, electron affinity and thickness of n-MoTe2 have been varied in the numerical simulation to observe its effects on overall photovoltaic performance. The increase in the carrier concentration and bandgap energy of n-MoTe2 deteriorates the overall performance. This could be attributed to the high value of built-in-potential (Vbi) along with band offset value at n- MoTe2/p-CdTe interface, which causes the electrons to be drifted back towards the back contact and results in recombination. Advantageous effects are observed as the electron affinity of n-MoTe2 is increased. This can be explained by the lower value of band offset (ΔEC and ΔEV) at n-MoTe2/p-CdTe interface that interrupts the flow of carriers in overall circuit in a moderate way. Numerical results reveal that n-MoTe2 layer thinner than 50 nm affects adversely, possibly due to the shunting.

AB - The effects of unintentionally formed n-type transition metal dichalcogenide namely molybdenum telluride (MoTe2) in between Cadmium Telluride (CdTe) absorber layer and Mo back contact is studied from numerical modeling and analysis. The main objective is to analyze the possible effects of n-MoTe2 formation in CdTe thin film solar cell. Energy band line-up of Mo/MoTe2/CdTe interface is investigated in order to explain the interface properties with different parameters. Carrier concentration, bandgap energy, electron affinity and thickness of n-MoTe2 have been varied in the numerical simulation to observe its effects on overall photovoltaic performance. The increase in the carrier concentration and bandgap energy of n-MoTe2 deteriorates the overall performance. This could be attributed to the high value of built-in-potential (Vbi) along with band offset value at n- MoTe2/p-CdTe interface, which causes the electrons to be drifted back towards the back contact and results in recombination. Advantageous effects are observed as the electron affinity of n-MoTe2 is increased. This can be explained by the lower value of band offset (ΔEC and ΔEV) at n-MoTe2/p-CdTe interface that interrupts the flow of carriers in overall circuit in a moderate way. Numerical results reveal that n-MoTe2 layer thinner than 50 nm affects adversely, possibly due to the shunting.

KW - CdTe

KW - Substrate configuration

KW - Thin film solar cells

UR - http://www.scopus.com/inward/record.url?scp=84902337676&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84902337676&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:84902337676

VL - 11

SP - 271

EP - 279

JO - Chalcogenide Letters

JF - Chalcogenide Letters

SN - 1584-8663

IS - 6

ER -