Effect of isopropyl alcohol (IPA) on etching rate and surface roughness of silicon etched in KOH solution

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

This paper studies the etching process of (100) silicon wafers in Potassium Hydroxide (KOH) solution by patterning the silicon nitride with a square frame. The mutual relationship of the etching rate and temperature variation has been analysed. Particular additives like isopropyl alcohol can be added to the KOH solution to improve the smoothness of the surface plane. This smooth surface is necessary to produce pores on the silicon membrane. The addition of 10% IPA is proven to improve the surface roughness and increase the etching rate. This is verified by inspecting the substrate under AFM and optical microscopy. The micro pipes produced after an etching process were also reduced using the IPA.

Original languageEnglish
Title of host publicationRSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479985500
DOIs
Publication statusPublished - 11 Dec 2015
Event10th IEEE Regional Symposium on Micro and Nano Electronics, RSM 2015 - Kuala Terengganu, Malaysia
Duration: 19 Aug 201521 Aug 2015

Other

Other10th IEEE Regional Symposium on Micro and Nano Electronics, RSM 2015
CountryMalaysia
CityKuala Terengganu
Period19/8/1521/8/15

Fingerprint

isopropyl alcohol
2-Propanol
Silicon
Etching
surface roughness
Alcohols
roughness
Surface roughness
etching
silicon
potassium hydroxides
Potassium hydroxide
Silicon nitride
Silicon wafers
silicon nitrides
Optical microscopy
Pipe
atomic force microscopy
wafers
membranes

Keywords

  • etch rate
  • isopropyl alcohol (IPA)
  • Potassium Hydroxide (KOH)
  • Surface roughness
  • temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Electrical and Electronic Engineering

Cite this

Burham, N., Hamzah, A. A., & Yeop Majlis, B. (2015). Effect of isopropyl alcohol (IPA) on etching rate and surface roughness of silicon etched in KOH solution. In RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings [7355008] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RSM.2015.7355008

Effect of isopropyl alcohol (IPA) on etching rate and surface roughness of silicon etched in KOH solution. / Burham, Norhafizah; Hamzah, Azrul Azlan; Yeop Majlis, Burhanuddin.

RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2015. 7355008.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Burham, N, Hamzah, AA & Yeop Majlis, B 2015, Effect of isopropyl alcohol (IPA) on etching rate and surface roughness of silicon etched in KOH solution. in RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings., 7355008, Institute of Electrical and Electronics Engineers Inc., 10th IEEE Regional Symposium on Micro and Nano Electronics, RSM 2015, Kuala Terengganu, Malaysia, 19/8/15. https://doi.org/10.1109/RSM.2015.7355008
Burham N, Hamzah AA, Yeop Majlis B. Effect of isopropyl alcohol (IPA) on etching rate and surface roughness of silicon etched in KOH solution. In RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2015. 7355008 https://doi.org/10.1109/RSM.2015.7355008
Burham, Norhafizah ; Hamzah, Azrul Azlan ; Yeop Majlis, Burhanuddin. / Effect of isopropyl alcohol (IPA) on etching rate and surface roughness of silicon etched in KOH solution. RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2015.
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abstract = "This paper studies the etching process of (100) silicon wafers in Potassium Hydroxide (KOH) solution by patterning the silicon nitride with a square frame. The mutual relationship of the etching rate and temperature variation has been analysed. Particular additives like isopropyl alcohol can be added to the KOH solution to improve the smoothness of the surface plane. This smooth surface is necessary to produce pores on the silicon membrane. The addition of 10{\%} IPA is proven to improve the surface roughness and increase the etching rate. This is verified by inspecting the substrate under AFM and optical microscopy. The micro pipes produced after an etching process were also reduced using the IPA.",
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