Effect of illumination positioning on the characteristics of an In 0.53Ga0.47As interdigitated lateral PIN photodiode

P. Susthitha Menon N V Visvanathan, K. Kandiah, S. Shaari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The interdigitated lateral p-i-n photodiode (ILPP) based on In 0.53Ga0.47As absorbing layer is an attractive alternative device to be used in optical communication networks operating at 10 Gbps or lower. Its simple fabrication methodology utilizing diffusion/ion implantation to form the p+ and n+ regions is a cost-reducing technique versus those used in developing conventional p-i-n photodiodes. A three-dimensional model of this device was developed and the device achieved dark currents of 0.21 nA, responsivity of 0.56 AAV, external quantum efficiency of 44 %, -3dB frequency of 8.93 GHz and signal-to-noise ratio, SNR of 36 dB at an operating voltage of 5 V, λ=1.55 pm and P=10 Wcm-2. Another significant advantage of the ILPP device is that it can be illuminated from three different angles; ie from the surface, from the edge and also from the bottom. In this paper, we attempt to compare the impact of optical beam illumination positioning on the common device characteristics.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Pages288-291
Number of pages4
DOIs
Publication statusPublished - 2008
Event2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008 - Johor Bahru, Johor
Duration: 25 Nov 200827 Nov 2008

Other

Other2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008
CityJohor Bahru, Johor
Period25/11/0827/11/08

Fingerprint

Photodiodes
Lighting
Dark currents
Optical communication
Fiber optic networks
Quantum efficiency
Ion implantation
Telecommunication networks
Signal to noise ratio
Fabrication
Electric potential
Costs

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

N V Visvanathan, P. S. M., Kandiah, K., & Shaari, S. (2008). Effect of illumination positioning on the characteristics of an In 0.53Ga0.47As interdigitated lateral PIN photodiode. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 288-291). [4770325] https://doi.org/10.1109/SMELEC.2008.4770325

Effect of illumination positioning on the characteristics of an In 0.53Ga0.47As interdigitated lateral PIN photodiode. / N V Visvanathan, P. Susthitha Menon; Kandiah, K.; Shaari, S.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2008. p. 288-291 4770325.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

N V Visvanathan, PSM, Kandiah, K & Shaari, S 2008, Effect of illumination positioning on the characteristics of an In 0.53Ga0.47As interdigitated lateral PIN photodiode. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 4770325, pp. 288-291, 2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008, Johor Bahru, Johor, 25/11/08. https://doi.org/10.1109/SMELEC.2008.4770325
N V Visvanathan PSM, Kandiah K, Shaari S. Effect of illumination positioning on the characteristics of an In 0.53Ga0.47As interdigitated lateral PIN photodiode. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2008. p. 288-291. 4770325 https://doi.org/10.1109/SMELEC.2008.4770325
N V Visvanathan, P. Susthitha Menon ; Kandiah, K. ; Shaari, S. / Effect of illumination positioning on the characteristics of an In 0.53Ga0.47As interdigitated lateral PIN photodiode. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2008. pp. 288-291
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