VLIYANIE TERMOOBRABOTKI NA NEKOTORYE SVOISTVA TONKOPLENOCHNOGO GETEROPEREKHODA Cu//xS-CdS.

Translated title of the contribution: Effect of Heat Treatment on Some Properties of the Thin-Film Heterojunction Cu//xS-CdS.

Kh T. Akramov, G. Ya Umarov, T. M. Razykov

Research output: Contribution to journalArticle

Abstract

Results of investigations are presented on the effect of heat treatment on the short-circuit current, idling stroke voltage, volt-ampere, volt-capacitance and spectral characteristics of the Cu//xS-CdS heterojunction. It is found that, after a short heat treatment, specimens with relatively poor characteristics improved their photovoltaic properties. The results obtained are explained by copper diffusion - which takes place during heat treatment - from the collector grid and copper accumulations in the p-layer of Cu//xS into the surface region of the base layer n-CdS.

Original languageUndefined/Unknown
Pages (from-to)3-7
Number of pages5
JournalGeliotekhnika
Issue number6
Publication statusPublished - 1975
Externally publishedYes

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Heterojunctions
Heat treatment
Thin films
Copper
Short circuit currents
Capacitance
Electric potential

ASJC Scopus subject areas

  • Energy (miscellaneous)

Cite this

Akramov, K. T., Umarov, G. Y., & Razykov, T. M. (1975). VLIYANIE TERMOOBRABOTKI NA NEKOTORYE SVOISTVA TONKOPLENOCHNOGO GETEROPEREKHODA Cu//xS-CdS. Geliotekhnika, (6), 3-7.

VLIYANIE TERMOOBRABOTKI NA NEKOTORYE SVOISTVA TONKOPLENOCHNOGO GETEROPEREKHODA Cu//xS-CdS. / Akramov, Kh T.; Umarov, G. Ya; Razykov, T. M.

In: Geliotekhnika, No. 6, 1975, p. 3-7.

Research output: Contribution to journalArticle

Akramov, Kh T. ; Umarov, G. Ya ; Razykov, T. M. / VLIYANIE TERMOOBRABOTKI NA NEKOTORYE SVOISTVA TONKOPLENOCHNOGO GETEROPEREKHODA Cu//xS-CdS. In: Geliotekhnika. 1975 ; No. 6. pp. 3-7.
@article{e4b5b89da9204d5ca5668d254dba4dc1,
title = "VLIYANIE TERMOOBRABOTKI NA NEKOTORYE SVOISTVA TONKOPLENOCHNOGO GETEROPEREKHODA Cu//xS-CdS.",
abstract = "Results of investigations are presented on the effect of heat treatment on the short-circuit current, idling stroke voltage, volt-ampere, volt-capacitance and spectral characteristics of the Cu//xS-CdS heterojunction. It is found that, after a short heat treatment, specimens with relatively poor characteristics improved their photovoltaic properties. The results obtained are explained by copper diffusion - which takes place during heat treatment - from the collector grid and copper accumulations in the p-layer of Cu//xS into the surface region of the base layer n-CdS.",
author = "Akramov, {Kh T.} and Umarov, {G. Ya} and Razykov, {T. M.}",
year = "1975",
language = "Undefined/Unknown",
pages = "3--7",
journal = "Geliotekhnika",
issn = "0130-0997",
publisher = "Izdatel'stvo Fan",
number = "6",

}

TY - JOUR

T1 - VLIYANIE TERMOOBRABOTKI NA NEKOTORYE SVOISTVA TONKOPLENOCHNOGO GETEROPEREKHODA Cu//xS-CdS.

AU - Akramov, Kh T.

AU - Umarov, G. Ya

AU - Razykov, T. M.

PY - 1975

Y1 - 1975

N2 - Results of investigations are presented on the effect of heat treatment on the short-circuit current, idling stroke voltage, volt-ampere, volt-capacitance and spectral characteristics of the Cu//xS-CdS heterojunction. It is found that, after a short heat treatment, specimens with relatively poor characteristics improved their photovoltaic properties. The results obtained are explained by copper diffusion - which takes place during heat treatment - from the collector grid and copper accumulations in the p-layer of Cu//xS into the surface region of the base layer n-CdS.

AB - Results of investigations are presented on the effect of heat treatment on the short-circuit current, idling stroke voltage, volt-ampere, volt-capacitance and spectral characteristics of the Cu//xS-CdS heterojunction. It is found that, after a short heat treatment, specimens with relatively poor characteristics improved their photovoltaic properties. The results obtained are explained by copper diffusion - which takes place during heat treatment - from the collector grid and copper accumulations in the p-layer of Cu//xS into the surface region of the base layer n-CdS.

UR - http://www.scopus.com/inward/record.url?scp=0016587311&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0016587311&partnerID=8YFLogxK

M3 - Article

SP - 3

EP - 7

JO - Geliotekhnika

JF - Geliotekhnika

SN - 0130-0997

IS - 6

ER -