Effect of growth solution concentration on the performance of gallium doped ZnO nanostructures dye sensitized solar cells (DSSCs)

I. Iwantono, S. Tugirin, F. Anggelina, Awitdrus, Erman Taer, L. Roza, Ali Umar Akrajas

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper reports the synthesis of gallium doped ZnO nanostructures via seed mediated growth hydrothermal technique and their application as photo-Anode in DSSC. ZnO nanostructures have been grown on Flourin Tin Oxide (FTO). The precursor used in this research was zinc-nitrate-hexahydrate (Zn (NO3)2.6H2O) and hexa-metylene-Tetramine (HMT) was chosen as surfactant. The growth process was carried out at various precursor solution concentrations, 0.1, 0.2, 0.3 and 0.4 M at 90°C for 8 hours. The growth solution was then doped with 1% wt gallium nitrate hydrate. The grown ZnO nanostructures were characterized by X-Ray Diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM) and Energy Dispersive X-Ray (EDX) and UV-Vis Spectroscopy. The samples were crystalline with wurtzite-hexagonal and their crystal orientation was (100), (002), (101), and (110). The morphological shape of the samples changed with the concentration of the precursor. The optical absorption decreased as the concentration increased. As can be seen from SEM images that the diameter of the particles ranged from 95 to 500?nm and the thickness ranged from 1540 to 3640?nm (1.54-3.64 μm). The best performance of DSSC was obtained from the sample utilizing the ZnO nanostructures prepared at 0.1 M precursor, with their photovoltaic parameters were the Jsc of 2.190?mA cm-2, FF of 0.39, and η of 0.41%, respectively.

Original languageEnglish
Title of host publication2nd Padjadjaran International Physics Symposium 2015, PIPS 2015: Materials Functionalization and Energy Conservations
PublisherAmerican Institute of Physics Inc.
Volume1712
ISBN (Electronic)9780735413597
DOIs
Publication statusPublished - 24 Feb 2016
Event2nd Padjadjaran International Physics Symposium: Materials Functionalization and Energy Conservations, PIPS 2015 - Jatinangor, Bandung, Indonesia
Duration: 2 Sep 20153 Sep 2015

Other

Other2nd Padjadjaran International Physics Symposium: Materials Functionalization and Energy Conservations, PIPS 2015
CountryIndonesia
CityJatinangor, Bandung
Period2/9/153/9/15

Fingerprint

gallium
solar cells
dyes
nitrates
scanning electron microscopy
hydrates
wurtzite
tin oxides
seeds
field emission
optical absorption
anodes
x rays
zinc
surfactants
electron energy
synthesis
diffraction
spectroscopy
crystals

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Iwantono, I., Tugirin, S., Anggelina, F., Awitdrus, Taer, E., Roza, L., & Akrajas, A. U. (2016). Effect of growth solution concentration on the performance of gallium doped ZnO nanostructures dye sensitized solar cells (DSSCs). In 2nd Padjadjaran International Physics Symposium 2015, PIPS 2015: Materials Functionalization and Energy Conservations (Vol. 1712). [050024] American Institute of Physics Inc.. https://doi.org/10.1063/1.4941907

Effect of growth solution concentration on the performance of gallium doped ZnO nanostructures dye sensitized solar cells (DSSCs). / Iwantono, I.; Tugirin, S.; Anggelina, F.; Awitdrus; Taer, Erman; Roza, L.; Akrajas, Ali Umar.

2nd Padjadjaran International Physics Symposium 2015, PIPS 2015: Materials Functionalization and Energy Conservations. Vol. 1712 American Institute of Physics Inc., 2016. 050024.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Iwantono, I, Tugirin, S, Anggelina, F, Awitdrus, Taer, E, Roza, L & Akrajas, AU 2016, Effect of growth solution concentration on the performance of gallium doped ZnO nanostructures dye sensitized solar cells (DSSCs). in 2nd Padjadjaran International Physics Symposium 2015, PIPS 2015: Materials Functionalization and Energy Conservations. vol. 1712, 050024, American Institute of Physics Inc., 2nd Padjadjaran International Physics Symposium: Materials Functionalization and Energy Conservations, PIPS 2015, Jatinangor, Bandung, Indonesia, 2/9/15. https://doi.org/10.1063/1.4941907
Iwantono I, Tugirin S, Anggelina F, Awitdrus, Taer E, Roza L et al. Effect of growth solution concentration on the performance of gallium doped ZnO nanostructures dye sensitized solar cells (DSSCs). In 2nd Padjadjaran International Physics Symposium 2015, PIPS 2015: Materials Functionalization and Energy Conservations. Vol. 1712. American Institute of Physics Inc. 2016. 050024 https://doi.org/10.1063/1.4941907
Iwantono, I. ; Tugirin, S. ; Anggelina, F. ; Awitdrus ; Taer, Erman ; Roza, L. ; Akrajas, Ali Umar. / Effect of growth solution concentration on the performance of gallium doped ZnO nanostructures dye sensitized solar cells (DSSCs). 2nd Padjadjaran International Physics Symposium 2015, PIPS 2015: Materials Functionalization and Energy Conservations. Vol. 1712 American Institute of Physics Inc., 2016.
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N2 - This paper reports the synthesis of gallium doped ZnO nanostructures via seed mediated growth hydrothermal technique and their application as photo-Anode in DSSC. ZnO nanostructures have been grown on Flourin Tin Oxide (FTO). The precursor used in this research was zinc-nitrate-hexahydrate (Zn (NO3)2.6H2O) and hexa-metylene-Tetramine (HMT) was chosen as surfactant. The growth process was carried out at various precursor solution concentrations, 0.1, 0.2, 0.3 and 0.4 M at 90°C for 8 hours. The growth solution was then doped with 1% wt gallium nitrate hydrate. The grown ZnO nanostructures were characterized by X-Ray Diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM) and Energy Dispersive X-Ray (EDX) and UV-Vis Spectroscopy. The samples were crystalline with wurtzite-hexagonal and their crystal orientation was (100), (002), (101), and (110). The morphological shape of the samples changed with the concentration of the precursor. The optical absorption decreased as the concentration increased. As can be seen from SEM images that the diameter of the particles ranged from 95 to 500?nm and the thickness ranged from 1540 to 3640?nm (1.54-3.64 μm). The best performance of DSSC was obtained from the sample utilizing the ZnO nanostructures prepared at 0.1 M precursor, with their photovoltaic parameters were the Jsc of 2.190?mA cm-2, FF of 0.39, and η of 0.41%, respectively.

AB - This paper reports the synthesis of gallium doped ZnO nanostructures via seed mediated growth hydrothermal technique and their application as photo-Anode in DSSC. ZnO nanostructures have been grown on Flourin Tin Oxide (FTO). The precursor used in this research was zinc-nitrate-hexahydrate (Zn (NO3)2.6H2O) and hexa-metylene-Tetramine (HMT) was chosen as surfactant. The growth process was carried out at various precursor solution concentrations, 0.1, 0.2, 0.3 and 0.4 M at 90°C for 8 hours. The growth solution was then doped with 1% wt gallium nitrate hydrate. The grown ZnO nanostructures were characterized by X-Ray Diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM) and Energy Dispersive X-Ray (EDX) and UV-Vis Spectroscopy. The samples were crystalline with wurtzite-hexagonal and their crystal orientation was (100), (002), (101), and (110). The morphological shape of the samples changed with the concentration of the precursor. The optical absorption decreased as the concentration increased. As can be seen from SEM images that the diameter of the particles ranged from 95 to 500?nm and the thickness ranged from 1540 to 3640?nm (1.54-3.64 μm). The best performance of DSSC was obtained from the sample utilizing the ZnO nanostructures prepared at 0.1 M precursor, with their photovoltaic parameters were the Jsc of 2.190?mA cm-2, FF of 0.39, and η of 0.41%, respectively.

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