Effect of graded Al xGa 1-xN layers on the properties of GaN grown on patterned Si substrates

Yu Lin Hsiao, Lung Chi Lu, Chia Hsun Wu, Edward Yi Chang, Chien I. Kuo, Jer Shen Maa, Kung Liang Lin, Tien Tung Luong, Wei Ching Huang, Chia Hua Chang, Chang Fu Dee, Burhanuddin Yeop Majlis

Research output: Contribution to journalArticle

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Abstract

2.2-μm-thick crack-free GaN films were grown on patterned Si substrates. The crack-free GaN films were obtained by patterning Si substrate and optimizing the graded Al xGa 1-xN layers. With the increase of the graded Al xGa 1-xN layer thickness, the GaN crystal quality improved as judged from the X-ray diffraction data. By applying multi-Al xGa 1-xN layers on the patterned Si substrate, a 31% reduction of tensile stress for the GaN film was obtained as measured by micro-Raman. For the AlGaN/GaN high electron mobility transistor grown on 1 × 1 cm 2 larger patterns, the device exhibits maximum drain current density of 776mA/mm and maximum transconductance of 101mS/mm.

Original languageEnglish
Article number025505
JournalJapanese Journal of Applied Physics
Volume51
Issue number2 PART 1
DOIs
Publication statusPublished - Feb 2012

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Substrates
cracks
Cracks
Drain current
Transconductance
High electron mobility transistors
transconductance
high electron mobility transistors
tensile stress
Tensile stress
Current density
current density
X ray diffraction
Crystals
diffraction
crystals
x rays

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Effect of graded Al xGa 1-xN layers on the properties of GaN grown on patterned Si substrates. / Hsiao, Yu Lin; Lu, Lung Chi; Wu, Chia Hsun; Chang, Edward Yi; Kuo, Chien I.; Maa, Jer Shen; Lin, Kung Liang; Luong, Tien Tung; Huang, Wei Ching; Chang, Chia Hua; Dee, Chang Fu; Yeop Majlis, Burhanuddin.

In: Japanese Journal of Applied Physics, Vol. 51, No. 2 PART 1, 025505, 02.2012.

Research output: Contribution to journalArticle

Hsiao, YL, Lu, LC, Wu, CH, Chang, EY, Kuo, CI, Maa, JS, Lin, KL, Luong, TT, Huang, WC, Chang, CH, Dee, CF & Yeop Majlis, B 2012, 'Effect of graded Al xGa 1-xN layers on the properties of GaN grown on patterned Si substrates', Japanese Journal of Applied Physics, vol. 51, no. 2 PART 1, 025505. https://doi.org/10.1143/JJAP.51.025505
Hsiao, Yu Lin ; Lu, Lung Chi ; Wu, Chia Hsun ; Chang, Edward Yi ; Kuo, Chien I. ; Maa, Jer Shen ; Lin, Kung Liang ; Luong, Tien Tung ; Huang, Wei Ching ; Chang, Chia Hua ; Dee, Chang Fu ; Yeop Majlis, Burhanuddin. / Effect of graded Al xGa 1-xN layers on the properties of GaN grown on patterned Si substrates. In: Japanese Journal of Applied Physics. 2012 ; Vol. 51, No. 2 PART 1.
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AB - 2.2-μm-thick crack-free GaN films were grown on patterned Si substrates. The crack-free GaN films were obtained by patterning Si substrate and optimizing the graded Al xGa 1-xN layers. With the increase of the graded Al xGa 1-xN layer thickness, the GaN crystal quality improved as judged from the X-ray diffraction data. By applying multi-Al xGa 1-xN layers on the patterned Si substrate, a 31% reduction of tensile stress for the GaN film was obtained as measured by micro-Raman. For the AlGaN/GaN high electron mobility transistor grown on 1 × 1 cm 2 larger patterns, the device exhibits maximum drain current density of 776mA/mm and maximum transconductance of 101mS/mm.

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