Effect of geometric parameters on the performance of P-type junctionless lateral gate transistors

Farhad Larki, Arash Dehzangi, Sawal Hamid Md Ali, Azman Jalar @ Jalil, Md. Shabiul Islam, Mohd Nizar Hamidon, Burhanuddin Yeop Majlis

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

This paper examines the impact of two important geometrical parameters, namely the thickness and source/drain extensions on the performance of low doped p-type double lateral gate junctionless transistors (DGJLTs). The three dimensional Technology Computer-Aided Design simulation is implemented to calculate the characteristics of the devices with different thickness and source/drain extension and based on that, the parameters such as threshold voltage, transconductance and resistance in saturation region are analyzed. In addition, simulation results provide a physical explanation for the variation of device characteristics given by the variation of geometric parameters, mainly based on investigation of the electric field components and the carries density variation. It is shown that, the variation of the carrier density is the main factor which affects the characteristics of the device when the device's thickness is varied. However, the electric field is mainly responsible for variation of the characteristics when the source/drain extension is changed.

Original languageEnglish
Article numbere95182
JournalPLoS One
Volume9
Issue number4
DOIs
Publication statusPublished - 17 Apr 2014

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Transistors
Electric fields
electric field
Equipment and Supplies
Transconductance
Threshold voltage
computer-aided design
Carrier concentration
Computer aided design
Computer-Aided Design
Technology

ASJC Scopus subject areas

  • Agricultural and Biological Sciences(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Medicine(all)

Cite this

Effect of geometric parameters on the performance of P-type junctionless lateral gate transistors. / Larki, Farhad; Dehzangi, Arash; Md Ali, Sawal Hamid; Jalar @ Jalil, Azman; Islam, Md. Shabiul; Hamidon, Mohd Nizar; Yeop Majlis, Burhanuddin.

In: PLoS One, Vol. 9, No. 4, e95182, 17.04.2014.

Research output: Contribution to journalArticle

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