Effect of Film Thickness on Photoelectrochemical Performance of SnO2 Prepared via AACVD

Mohamad F. Mohamad Noh, Mohd F. Soh, Muhammad A. Riza, Javad Safaei, Siti N.F. Mohd Nasir, Norfaizzatul W. Mohamad Sapian, Chin H. Teh, Mohd. Adib Ibrahim, Norasikin Ahmad Ludin, Mohd Asri Mat Teridi

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Tin (IV) oxide (SnO2) is a stable semiconductor and has been used in a wide range of applications. In this work, aerosol-assisted chemical vapor deposition (AACVD) technique is employed to deposit SnO2 thin film with different layer thicknesses by controlling the deposition time. The morphological and optical properties of SnO2 layer are investigated thoroughly to understand the relationship between the deposition time and SnO2 performance in photoelectrochemical cells. The bandgap energy of all SnO2 thin films is determined to be 3.65eV. However, from linear sweep voltammetry (LSV) analysis, it is found that SnO2 layer deposited for 15min, which produced a layer with thickness of about 50nm, showed the best photocurrent performance (30.7μAcm-2 at 1.0V vs. Ag/AgCl) compared to their thinner or thicker counterparts. The right thickness enables the formation of a film with complete surface coverage, which effectively prevents current leakage and allows optimum light absorption. Besides, electrochemical impedance spectroscopy (EIS) analysis confirms that 50nm thick SnO2 layer possesses fastest electron transfer property compared to thicker or thinner layers.

Original languageEnglish
JournalPhysica Status Solidi (B) Basic Research
DOIs
Publication statusAccepted/In press - 1 Jan 2018

Fingerprint

Aerosols
Film thickness
Chemical vapor deposition
aerosols
film thickness
vapor deposition
Photoelectrochemical cells
Thin films
Voltammetry
Tin oxides
Photocurrents
Electrochemical impedance spectroscopy
Leakage currents
Light absorption
Energy gap
Deposits
Optical properties
Semiconductor materials
Electrons
thin films

Keywords

  • Aerosol-assisted chemical vapor deposition
  • Film thickness
  • Photoelectrochemical water splitting
  • SnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Mohamad Noh, M. F., Soh, M. F., Riza, M. A., Safaei, J., Mohd Nasir, S. N. F., Mohamad Sapian, N. W., ... Mat Teridi, M. A. (Accepted/In press). Effect of Film Thickness on Photoelectrochemical Performance of SnO2 Prepared via AACVD. Physica Status Solidi (B) Basic Research. https://doi.org/10.1002/pssb.201700570

Effect of Film Thickness on Photoelectrochemical Performance of SnO2 Prepared via AACVD. / Mohamad Noh, Mohamad F.; Soh, Mohd F.; Riza, Muhammad A.; Safaei, Javad; Mohd Nasir, Siti N.F.; Mohamad Sapian, Norfaizzatul W.; Teh, Chin H.; Ibrahim, Mohd. Adib; Ahmad Ludin, Norasikin; Mat Teridi, Mohd Asri.

In: Physica Status Solidi (B) Basic Research, 01.01.2018.

Research output: Contribution to journalArticle

Mohamad Noh, Mohamad F. ; Soh, Mohd F. ; Riza, Muhammad A. ; Safaei, Javad ; Mohd Nasir, Siti N.F. ; Mohamad Sapian, Norfaizzatul W. ; Teh, Chin H. ; Ibrahim, Mohd. Adib ; Ahmad Ludin, Norasikin ; Mat Teridi, Mohd Asri. / Effect of Film Thickness on Photoelectrochemical Performance of SnO2 Prepared via AACVD. In: Physica Status Solidi (B) Basic Research. 2018.
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