### Abstract

In this work, single and multijunction amorphous silicon carbide (a-SiC:H) thin film solar cells have been investigated by the Analysis of Microelectronic and Photonic Structures (AMPS 1D) simulator in respect to overall performance. The photovoltaic characteristics have been observed by changing the optical energy bandgap of p-layer. For single junction, a good efficiency trend has been found for the window layer energy bandgap of 1.8-2.2 eV and the highest efficiency is achieved to be 17.67% at 2 eV. In the case of double junction, the efficiency has been found for the second p-layer energy bandgap of 1.8-2 eV and the highest efficiency is 19.04% at 1.9 eV. On the other hand, for triple junction solar cell the maximum efficiency has been found for the bottom cell's p-layer energy bandgap of 1.7-1.9 eV and the highest efficiency is 20.42% at 1.8 eV. It is evident that the optimum energy bandgap for a-SiC:H as window layers in triple junction configuration is 1.8-2.1 eV.

Original language | English |
---|---|

Title of host publication | Proceedings of the 11th WSEAS International Conference on Mathematical Methods, Computational Techniques and Intelligent Systems, MAMECTIS '09, Proc. 8th WSEAS NOLASC '09, Proc. 5th WSEAS CONTROL '09 |

Pages | 334-337 |

Number of pages | 4 |

Publication status | Published - 2009 |

Event | 11th WSEAS International Conference on Mathematical Methods, Computational Techniques and Intelligent Systems, MAMECTIS '09, 8th WSEAS Int. Conf. NOLASC '09, 5th WSEAS Int. Conf. CONTROL '09 - Canary Islands Duration: 1 Jul 2009 → 3 Jul 2009 |

### Other

Other | 11th WSEAS International Conference on Mathematical Methods, Computational Techniques and Intelligent Systems, MAMECTIS '09, 8th WSEAS Int. Conf. NOLASC '09, 5th WSEAS Int. Conf. CONTROL '09 |
---|---|

City | Canary Islands |

Period | 1/7/09 → 3/7/09 |

### Fingerprint

### Keywords

- a-SiC: H
- Bandgap and AMPS-1D
- Multijunction
- Single junction
- Thin-film

### ASJC Scopus subject areas

- Computational Theory and Mathematics
- Control and Systems Engineering
- Computational Mathematics

### Cite this

*Proceedings of the 11th WSEAS International Conference on Mathematical Methods, Computational Techniques and Intelligent Systems, MAMECTIS '09, Proc. 8th WSEAS NOLASC '09, Proc. 5th WSEAS CONTROL '09*(pp. 334-337)

**Effect of energy bandgap of the amorphous silicon carbide (a-Sic : H) layers on a-si multijuntion solar cells from numerical analysis.** / Kabir, M. I.; Amin, Nowshad; Zaharim, Azami; Sopian, Kamaruzzaman.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

*Proceedings of the 11th WSEAS International Conference on Mathematical Methods, Computational Techniques and Intelligent Systems, MAMECTIS '09, Proc. 8th WSEAS NOLASC '09, Proc. 5th WSEAS CONTROL '09.*pp. 334-337, 11th WSEAS International Conference on Mathematical Methods, Computational Techniques and Intelligent Systems, MAMECTIS '09, 8th WSEAS Int. Conf. NOLASC '09, 5th WSEAS Int. Conf. CONTROL '09, Canary Islands, 1/7/09.

}

TY - GEN

T1 - Effect of energy bandgap of the amorphous silicon carbide (a-Sic

T2 - H) layers on a-si multijuntion solar cells from numerical analysis

AU - Kabir, M. I.

AU - Amin, Nowshad

AU - Zaharim, Azami

AU - Sopian, Kamaruzzaman

PY - 2009

Y1 - 2009

N2 - In this work, single and multijunction amorphous silicon carbide (a-SiC:H) thin film solar cells have been investigated by the Analysis of Microelectronic and Photonic Structures (AMPS 1D) simulator in respect to overall performance. The photovoltaic characteristics have been observed by changing the optical energy bandgap of p-layer. For single junction, a good efficiency trend has been found for the window layer energy bandgap of 1.8-2.2 eV and the highest efficiency is achieved to be 17.67% at 2 eV. In the case of double junction, the efficiency has been found for the second p-layer energy bandgap of 1.8-2 eV and the highest efficiency is 19.04% at 1.9 eV. On the other hand, for triple junction solar cell the maximum efficiency has been found for the bottom cell's p-layer energy bandgap of 1.7-1.9 eV and the highest efficiency is 20.42% at 1.8 eV. It is evident that the optimum energy bandgap for a-SiC:H as window layers in triple junction configuration is 1.8-2.1 eV.

AB - In this work, single and multijunction amorphous silicon carbide (a-SiC:H) thin film solar cells have been investigated by the Analysis of Microelectronic and Photonic Structures (AMPS 1D) simulator in respect to overall performance. The photovoltaic characteristics have been observed by changing the optical energy bandgap of p-layer. For single junction, a good efficiency trend has been found for the window layer energy bandgap of 1.8-2.2 eV and the highest efficiency is achieved to be 17.67% at 2 eV. In the case of double junction, the efficiency has been found for the second p-layer energy bandgap of 1.8-2 eV and the highest efficiency is 19.04% at 1.9 eV. On the other hand, for triple junction solar cell the maximum efficiency has been found for the bottom cell's p-layer energy bandgap of 1.7-1.9 eV and the highest efficiency is 20.42% at 1.8 eV. It is evident that the optimum energy bandgap for a-SiC:H as window layers in triple junction configuration is 1.8-2.1 eV.

KW - a-SiC: H

KW - Bandgap and AMPS-1D

KW - Multijunction

KW - Single junction

KW - Thin-film

UR - http://www.scopus.com/inward/record.url?scp=78149343948&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78149343948&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:78149343948

SN - 9789604740949

SP - 334

EP - 337

BT - Proceedings of the 11th WSEAS International Conference on Mathematical Methods, Computational Techniques and Intelligent Systems, MAMECTIS '09, Proc. 8th WSEAS NOLASC '09, Proc. 5th WSEAS CONTROL '09

ER -