Effect of DRIE on the structure of Si based filtration pore arrays fabricated with double side aluminium coating layer

Kamarul'Asyikin Mustafa, Jumril Yunas, Azrul Azlan Hamzah, Wan Ammar Fikri Wan Ali, Burhanuddin Yeop Majlis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper reports the effect of DRIE process performed to define silicon filtration passageway underneath the aluminium based uniform pore filtration membrane and the membrane cavity on the back end of the silicon substrate. The aluminium based pore arrays for filtration is fabricated on top of the bare silicon substrate with uniform pore size and pore-to-pore gap at cryogenic temperature DRIE. Initially, the aluminium layer is sputtered on both end surface as a foundation of uniform pore arrays structure fabrication and as a DRIE mask for filtration membrane cavity on the back. Both aluminium based uniform pore filtration membrane with underneath silicon etch depth and its filtration cavity structure on the back are observed after 10 minutes and 1 h 45 minutes of DRIE process respectively. The silicon etch rate selectivity over aluminium is evaluated by verifying it's etch depth after the DRIE process. The etched area of silicon substrate underneath the fabricated aluminium based pore filtration membrane is then performs as filtration passageway when it unites with etched silicon area conducted for filtration cavity structure which started from the back end of the silicon substrate. All results have been verified by optical microscope and scanning electron microscopy. The result of the study should be beneficiary for the development of a reproducible filtration membrane with uniform pore that able to separate waste from required nutrients based on molecule size.

Original languageEnglish
Title of host publication2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages267-270
Number of pages4
Volume2018-August
ISBN (Electronic)9781538652831
DOIs
Publication statusPublished - 3 Oct 2018
Event13th IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Kuala Lumpur, Malaysia
Duration: 15 Aug 201817 Aug 2018

Other

Other13th IEEE International Conference on Semiconductor Electronics, ICSE 2018
CountryMalaysia
CityKuala Lumpur
Period15/8/1817/8/18

Fingerprint

Aluminum coatings
Silicon
Aluminum
Membranes
Substrates
Cryogenics
Nutrients
Pore size
Masks
Microscopes

Keywords

  • aluminium
  • DRIE
  • filtration
  • silicon
  • uniform pore arrays

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Mustafa, KA., Yunas, J., Hamzah, A. A., Fikri Wan Ali, W. A., & Yeop Majlis, B. (2018). Effect of DRIE on the structure of Si based filtration pore arrays fabricated with double side aluminium coating layer. In 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings (Vol. 2018-August, pp. 267-270). [8481210] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMELEC.2018.8481210

Effect of DRIE on the structure of Si based filtration pore arrays fabricated with double side aluminium coating layer. / Mustafa, Kamarul'Asyikin; Yunas, Jumril; Hamzah, Azrul Azlan; Fikri Wan Ali, Wan Ammar; Yeop Majlis, Burhanuddin.

2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. Vol. 2018-August Institute of Electrical and Electronics Engineers Inc., 2018. p. 267-270 8481210.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mustafa, KA, Yunas, J, Hamzah, AA, Fikri Wan Ali, WA & Yeop Majlis, B 2018, Effect of DRIE on the structure of Si based filtration pore arrays fabricated with double side aluminium coating layer. in 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. vol. 2018-August, 8481210, Institute of Electrical and Electronics Engineers Inc., pp. 267-270, 13th IEEE International Conference on Semiconductor Electronics, ICSE 2018, Kuala Lumpur, Malaysia, 15/8/18. https://doi.org/10.1109/SMELEC.2018.8481210
Mustafa KA, Yunas J, Hamzah AA, Fikri Wan Ali WA, Yeop Majlis B. Effect of DRIE on the structure of Si based filtration pore arrays fabricated with double side aluminium coating layer. In 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. Vol. 2018-August. Institute of Electrical and Electronics Engineers Inc. 2018. p. 267-270. 8481210 https://doi.org/10.1109/SMELEC.2018.8481210
Mustafa, Kamarul'Asyikin ; Yunas, Jumril ; Hamzah, Azrul Azlan ; Fikri Wan Ali, Wan Ammar ; Yeop Majlis, Burhanuddin. / Effect of DRIE on the structure of Si based filtration pore arrays fabricated with double side aluminium coating layer. 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. Vol. 2018-August Institute of Electrical and Electronics Engineers Inc., 2018. pp. 267-270
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