Effect of disorder particles size of Nd on electrical transport on a bulk of Pr2/3Ba1/3MnO3

Huda Abdullah, S. A. Halim, A. N. Jannah

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Polycrystalline samples of (Pr1-xNdx)0.67Ba0.33MnO3 with concentrations of x-=-0.0, 0.167, 0.33, 0.5, 0.67, 0.833, and 1.0 have been prepared using solid-state reactions. The analysis of X-ray diffraction data revealed that all of the samples were found to crystallize in the orthorhombic structure. The electrical property, Tp, was determined by using standard four-point probe resistivity measurements in a temperature range of 30-300-K. A shift of the metal-insulator transition temperature, Tp, to a lower value was observed when Pr doping was increased. The electrical resistivity data was analyzed using various theoretical models, and it has been concluded that the resistivity of the samples in a low temperature regime (T-<-Tp) are well-fitted using the expression ρ=ρ0+ρ2T2+ρ4.5T4.5, implying the importance of grain/domain boundaries and electron-electron and two magnon scattering processes. In the high temperature regime (T->-Tp), the resistivity data can be well described by small polaron hopping and variable range hopping mechanisms. In the semi-conducting portion, the activation energy (Ea) has been investigated. The Ea increased as the doping concentration increased. Scanning electron microscope micrographs showed that the substitution of Nd3+ ions for the Pr3+ site in LaBaMnO3 leads to grain growth inhibition, disorder in the grain size, praseodymium segregation, and second phase formation.

Original languageEnglish
Pages (from-to)3103-3112
Number of pages10
JournalJournal of Composite Materials
Volume46
Issue number24
DOIs
Publication statusPublished - Nov 2012

Fingerprint

Praseodymium
Particle size
Doping (additives)
Gene Conversion
Metal insulator transition
Solid state reactions
Grain growth
Superconducting transition temperature
Electric properties
Substitution reactions
Electron microscopes
Activation energy
Ions
Scanning
X ray diffraction
Temperature

Keywords

  • activation energy
  • magnon scattering
  • Metal-insulator transistor temperature
  • small polaron hopping
  • variable range hopping model

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Effect of disorder particles size of Nd on electrical transport on a bulk of Pr2/3Ba1/3MnO3 . / Abdullah, Huda; Halim, S. A.; Jannah, A. N.

In: Journal of Composite Materials, Vol. 46, No. 24, 11.2012, p. 3103-3112.

Research output: Contribution to journalArticle

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AB - Polycrystalline samples of (Pr1-xNdx)0.67Ba0.33MnO3 with concentrations of x-=-0.0, 0.167, 0.33, 0.5, 0.67, 0.833, and 1.0 have been prepared using solid-state reactions. The analysis of X-ray diffraction data revealed that all of the samples were found to crystallize in the orthorhombic structure. The electrical property, Tp, was determined by using standard four-point probe resistivity measurements in a temperature range of 30-300-K. A shift of the metal-insulator transition temperature, Tp, to a lower value was observed when Pr doping was increased. The electrical resistivity data was analyzed using various theoretical models, and it has been concluded that the resistivity of the samples in a low temperature regime (T-<-Tp) are well-fitted using the expression ρ=ρ0+ρ2T2+ρ4.5T4.5, implying the importance of grain/domain boundaries and electron-electron and two magnon scattering processes. In the high temperature regime (T->-Tp), the resistivity data can be well described by small polaron hopping and variable range hopping mechanisms. In the semi-conducting portion, the activation energy (Ea) has been investigated. The Ea increased as the doping concentration increased. Scanning electron microscope micrographs showed that the substitution of Nd3+ ions for the Pr3+ site in LaBaMnO3 leads to grain growth inhibition, disorder in the grain size, praseodymium segregation, and second phase formation.

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