Effect of deposition power in fabrication of highly efficient CdS

O/CdTe thin film solar cell by the magnetron sputtering technique

M. A. Islam, M. U. Khandaker, Nowshad Amin

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Abstract Polycrystalline II-VI semiconductor materials such as oxygenated CdS have a wide and tunable band gap (≥2.5 eV) which plays an important role in increasing the light absorption capacity of CdTe absorber. In this study, the ultra-thin CdS:O and CdTe films were deposited by the sputtering technique and the optimum condition of deposition power is investigated. The prepared ultra-thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, X-ray photoelectron spectroscopy (XPS), UV-vis spectrometry, Hall Effect and current-voltage measurements techniques. The complete cell was then fabricated by the sputtering technique with a novel configuration of 'glass/FTO/ZnO:Sn/CdS:O/CdTe/C:Cu/Ag'. To avoid the pin hole effect, the high resistive ZnO:Sn layer was deposited as a buffer layer in between the FTO and CdS:O films. It has been observed that the cell performance parameters are found to be varied with deposition power of CdO:S films and an overall conversion efficiency of 10.27% was achieved.

Original languageEnglish
Article number2825
Pages (from-to)90-98
Number of pages9
JournalMaterials Science in Semiconductor Processing
Volume40
DOIs
Publication statusPublished - 13 Jul 2015

Fingerprint

Magnetron sputtering
magnetron sputtering
solar cells
Fabrication
fabrication
Sputtering
thin films
sputtering
Hall currents
x rays
Energy dispersive X ray analysis
Ultrathin films
Voltage measurement
Hall effect
Electric current measurement
Buffer layers
electromagnetic absorption
cells
Light absorption
electrical measurement

Keywords

  • CdS:O
  • CdTe
  • Cell efficiency
  • Optical properties
  • RF power
  • Structural properties
  • ZnO:Sn

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

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title = "Effect of deposition power in fabrication of highly efficient CdS: O/CdTe thin film solar cell by the magnetron sputtering technique",
abstract = "Abstract Polycrystalline II-VI semiconductor materials such as oxygenated CdS have a wide and tunable band gap (≥2.5 eV) which plays an important role in increasing the light absorption capacity of CdTe absorber. In this study, the ultra-thin CdS:O and CdTe films were deposited by the sputtering technique and the optimum condition of deposition power is investigated. The prepared ultra-thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, X-ray photoelectron spectroscopy (XPS), UV-vis spectrometry, Hall Effect and current-voltage measurements techniques. The complete cell was then fabricated by the sputtering technique with a novel configuration of 'glass/FTO/ZnO:Sn/CdS:O/CdTe/C:Cu/Ag'. To avoid the pin hole effect, the high resistive ZnO:Sn layer was deposited as a buffer layer in between the FTO and CdS:O films. It has been observed that the cell performance parameters are found to be varied with deposition power of CdO:S films and an overall conversion efficiency of 10.27{\%} was achieved.",
keywords = "CdS:O, CdTe, Cell efficiency, Optical properties, RF power, Structural properties, ZnO:Sn",
author = "Islam, {M. A.} and Khandaker, {M. U.} and Nowshad Amin",
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T1 - Effect of deposition power in fabrication of highly efficient CdS

T2 - O/CdTe thin film solar cell by the magnetron sputtering technique

AU - Islam, M. A.

AU - Khandaker, M. U.

AU - Amin, Nowshad

PY - 2015/7/13

Y1 - 2015/7/13

N2 - Abstract Polycrystalline II-VI semiconductor materials such as oxygenated CdS have a wide and tunable band gap (≥2.5 eV) which plays an important role in increasing the light absorption capacity of CdTe absorber. In this study, the ultra-thin CdS:O and CdTe films were deposited by the sputtering technique and the optimum condition of deposition power is investigated. The prepared ultra-thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, X-ray photoelectron spectroscopy (XPS), UV-vis spectrometry, Hall Effect and current-voltage measurements techniques. The complete cell was then fabricated by the sputtering technique with a novel configuration of 'glass/FTO/ZnO:Sn/CdS:O/CdTe/C:Cu/Ag'. To avoid the pin hole effect, the high resistive ZnO:Sn layer was deposited as a buffer layer in between the FTO and CdS:O films. It has been observed that the cell performance parameters are found to be varied with deposition power of CdO:S films and an overall conversion efficiency of 10.27% was achieved.

AB - Abstract Polycrystalline II-VI semiconductor materials such as oxygenated CdS have a wide and tunable band gap (≥2.5 eV) which plays an important role in increasing the light absorption capacity of CdTe absorber. In this study, the ultra-thin CdS:O and CdTe films were deposited by the sputtering technique and the optimum condition of deposition power is investigated. The prepared ultra-thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, X-ray photoelectron spectroscopy (XPS), UV-vis spectrometry, Hall Effect and current-voltage measurements techniques. The complete cell was then fabricated by the sputtering technique with a novel configuration of 'glass/FTO/ZnO:Sn/CdS:O/CdTe/C:Cu/Ag'. To avoid the pin hole effect, the high resistive ZnO:Sn layer was deposited as a buffer layer in between the FTO and CdS:O films. It has been observed that the cell performance parameters are found to be varied with deposition power of CdO:S films and an overall conversion efficiency of 10.27% was achieved.

KW - CdS:O

KW - CdTe

KW - Cell efficiency

KW - Optical properties

KW - RF power

KW - Structural properties

KW - ZnO:Sn

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