Effect of Cr doping in the microstructure, electrical and magnetic properties of In2-xCrxO3 System (x=0.1 and x=0.2)

H. Baqiah, Noor Baa`Yah Ibrahim, M. H. Abdi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper a sol-gel method followed by a spin coating technique have been used to fabricate In2-xCrxO3 thin films with x=0.1 and 0.2. The structural analysis using an x-ray diffractometer showed that films have bixibyte cubic structure with good orientations to (222) directions. Microstructure analysis using atomic force microscope showed that sample with x=0.1 has clear pores and the particles tend to agglomerate and collect together with some holes seen on surface at x=0.2. The structure analysis using transmission electron microscope showed that the average grain size is 7.9 nm and 5.6 nm for samples x=0.1 and 0.2, respectively. The electrical measurements were carried out using Hall effect measurement system. The resistivity, carrier concentration and mobility for sample with x=0.1 is 27ohm.cm, 8.1x1016 cm-3 and 1.9 cm2V-1S -1, respectively and for higher dopant the film became insulator. The film with x=0.1 has metallic like behavior at 80-165K while semiconducting like behavior observed at 170-300K. Thermal activated conduction band and hoping conduction models have been used to estimate conducting mechanism in semiconducting part. Both samples show magnetic behavior at room temperature. The magnetic moment decreased from 6.7 emu/cm3 for x=0.1 to 2.8 emu/cm3 for x=0.2 while the coercivity increased from 85 Oe for x=0.1 to 120 Oe for x=0.2.

Original languageEnglish
Title of host publicationAIP Conference Proceedings
Pages3-9
Number of pages7
Volume1571
DOIs
Publication statusPublished - 2013
Event2013 UKM Faculty of Science and Technology Post-Graduate Colloquium - Selangor, Malaysia
Duration: 3 Jul 20134 Jul 2013

Other

Other2013 UKM Faculty of Science and Technology Post-Graduate Colloquium
CountryMalaysia
CitySelangor
Period3/7/134/7/13

Fingerprint

electrical properties
magnetic properties
microstructure
conduction
diffractometers
structural analysis
electrical measurement
coercivity
Hall effect
coating
conduction bands
electron microscopes
magnetic moments
grain size
microscopes
insulators
gels
porosity
electrical resistivity
room temperature

Keywords

  • Conducting mechanism
  • Ferromagnetic
  • Pores
  • Spin coated
  • Thin film

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Effect of Cr doping in the microstructure, electrical and magnetic properties of In2-xCrxO3 System (x=0.1 and x=0.2). / Baqiah, H.; Ibrahim, Noor Baa`Yah; Abdi, M. H.

AIP Conference Proceedings. Vol. 1571 2013. p. 3-9.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Baqiah, H, Ibrahim, NBY & Abdi, MH 2013, Effect of Cr doping in the microstructure, electrical and magnetic properties of In2-xCrxO3 System (x=0.1 and x=0.2). in AIP Conference Proceedings. vol. 1571, pp. 3-9, 2013 UKM Faculty of Science and Technology Post-Graduate Colloquium, Selangor, Malaysia, 3/7/13. https://doi.org/10.1063/1.4858621
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AU - Abdi, M. H.

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N2 - In this paper a sol-gel method followed by a spin coating technique have been used to fabricate In2-xCrxO3 thin films with x=0.1 and 0.2. The structural analysis using an x-ray diffractometer showed that films have bixibyte cubic structure with good orientations to (222) directions. Microstructure analysis using atomic force microscope showed that sample with x=0.1 has clear pores and the particles tend to agglomerate and collect together with some holes seen on surface at x=0.2. The structure analysis using transmission electron microscope showed that the average grain size is 7.9 nm and 5.6 nm for samples x=0.1 and 0.2, respectively. The electrical measurements were carried out using Hall effect measurement system. The resistivity, carrier concentration and mobility for sample with x=0.1 is 27ohm.cm, 8.1x1016 cm-3 and 1.9 cm2V-1S -1, respectively and for higher dopant the film became insulator. The film with x=0.1 has metallic like behavior at 80-165K while semiconducting like behavior observed at 170-300K. Thermal activated conduction band and hoping conduction models have been used to estimate conducting mechanism in semiconducting part. Both samples show magnetic behavior at room temperature. The magnetic moment decreased from 6.7 emu/cm3 for x=0.1 to 2.8 emu/cm3 for x=0.2 while the coercivity increased from 85 Oe for x=0.1 to 120 Oe for x=0.2.

AB - In this paper a sol-gel method followed by a spin coating technique have been used to fabricate In2-xCrxO3 thin films with x=0.1 and 0.2. The structural analysis using an x-ray diffractometer showed that films have bixibyte cubic structure with good orientations to (222) directions. Microstructure analysis using atomic force microscope showed that sample with x=0.1 has clear pores and the particles tend to agglomerate and collect together with some holes seen on surface at x=0.2. The structure analysis using transmission electron microscope showed that the average grain size is 7.9 nm and 5.6 nm for samples x=0.1 and 0.2, respectively. The electrical measurements were carried out using Hall effect measurement system. The resistivity, carrier concentration and mobility for sample with x=0.1 is 27ohm.cm, 8.1x1016 cm-3 and 1.9 cm2V-1S -1, respectively and for higher dopant the film became insulator. The film with x=0.1 has metallic like behavior at 80-165K while semiconducting like behavior observed at 170-300K. Thermal activated conduction band and hoping conduction models have been used to estimate conducting mechanism in semiconducting part. Both samples show magnetic behavior at room temperature. The magnetic moment decreased from 6.7 emu/cm3 for x=0.1 to 2.8 emu/cm3 for x=0.2 while the coercivity increased from 85 Oe for x=0.1 to 120 Oe for x=0.2.

KW - Conducting mechanism

KW - Ferromagnetic

KW - Pores

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