Effect of Channel Width Variation on Electrical Characteristics of Double Lateral Gate Junctionless Transistors; A Numerical Study

Farhad Larki, Arash Dehzangi, Md. Shabiul Islam, Sawal Hamid Md Ali, Alam Abedini, Burhanuddin Yeop Majlis

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this paper, the effect of channel width variation on performance of double lateral gate junctionless transistors in the depletion and accumulation regimes is investigated. The characteristics of the device with various channel widths is comprehensively examined through analysis of on and off state current, threshold voltage (V th), transconductance (g m) and drain conductance (g D) variation in each operating regime. The carriers’ density distribution, electric field components and mobility are investigated through 3-D numerical simulations of the device to illustrate the variation of output characteristics. The results show that as the width decreases, the off-current (IOFF) decreases significantly as a result of better electrostatic control of the lateral gates over the channel. The on-current (ION) is also decreased mainly due to the doping-dependent mobility degradation.It is also indicated that between the flat-band and fully depleted (pinch off) variation of the majority carriers is the main parameter that modifies the characteristics of the device, while the mobility variation is recognized as the basic factor in the accumulation regime.

Original languageEnglish
Pages (from-to)1-10
Number of pages10
JournalSilicon
DOIs
Publication statusAccepted/In press - 6 Oct 2017

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Transconductance
Threshold voltage
Carrier concentration
Electrostatics
Transistors
Electric fields
Doping (additives)
Degradation
Computer simulation

Keywords

  • 3D numerical simulations
  • Channel width
  • Junctionless transistors
  • Lateral gate

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

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title = "Effect of Channel Width Variation on Electrical Characteristics of Double Lateral Gate Junctionless Transistors; A Numerical Study",
abstract = "In this paper, the effect of channel width variation on performance of double lateral gate junctionless transistors in the depletion and accumulation regimes is investigated. The characteristics of the device with various channel widths is comprehensively examined through analysis of on and off state current, threshold voltage (V th), transconductance (g m) and drain conductance (g D) variation in each operating regime. The carriers’ density distribution, electric field components and mobility are investigated through 3-D numerical simulations of the device to illustrate the variation of output characteristics. The results show that as the width decreases, the off-current (IOFF) decreases significantly as a result of better electrostatic control of the lateral gates over the channel. The on-current (ION) is also decreased mainly due to the doping-dependent mobility degradation.It is also indicated that between the flat-band and fully depleted (pinch off) variation of the majority carriers is the main parameter that modifies the characteristics of the device, while the mobility variation is recognized as the basic factor in the accumulation regime.",
keywords = "3D numerical simulations, Channel width, Junctionless transistors, Lateral gate",
author = "Farhad Larki and Arash Dehzangi and Islam, {Md. Shabiul} and {Md Ali}, {Sawal Hamid} and Alam Abedini and {Yeop Majlis}, Burhanuddin",
year = "2017",
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AU - Dehzangi, Arash

AU - Islam, Md. Shabiul

AU - Md Ali, Sawal Hamid

AU - Abedini, Alam

AU - Yeop Majlis, Burhanuddin

PY - 2017/10/6

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N2 - In this paper, the effect of channel width variation on performance of double lateral gate junctionless transistors in the depletion and accumulation regimes is investigated. The characteristics of the device with various channel widths is comprehensively examined through analysis of on and off state current, threshold voltage (V th), transconductance (g m) and drain conductance (g D) variation in each operating regime. The carriers’ density distribution, electric field components and mobility are investigated through 3-D numerical simulations of the device to illustrate the variation of output characteristics. The results show that as the width decreases, the off-current (IOFF) decreases significantly as a result of better electrostatic control of the lateral gates over the channel. The on-current (ION) is also decreased mainly due to the doping-dependent mobility degradation.It is also indicated that between the flat-band and fully depleted (pinch off) variation of the majority carriers is the main parameter that modifies the characteristics of the device, while the mobility variation is recognized as the basic factor in the accumulation regime.

AB - In this paper, the effect of channel width variation on performance of double lateral gate junctionless transistors in the depletion and accumulation regimes is investigated. The characteristics of the device with various channel widths is comprehensively examined through analysis of on and off state current, threshold voltage (V th), transconductance (g m) and drain conductance (g D) variation in each operating regime. The carriers’ density distribution, electric field components and mobility are investigated through 3-D numerical simulations of the device to illustrate the variation of output characteristics. The results show that as the width decreases, the off-current (IOFF) decreases significantly as a result of better electrostatic control of the lateral gates over the channel. The on-current (ION) is also decreased mainly due to the doping-dependent mobility degradation.It is also indicated that between the flat-band and fully depleted (pinch off) variation of the majority carriers is the main parameter that modifies the characteristics of the device, while the mobility variation is recognized as the basic factor in the accumulation regime.

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