Effect of Cd 1-x Zn x S Window Layer Incorporation in CdTe Solar Cell by Numerical Simulation

N. K. Das, A. K. Sengupta, Mrinmoy Dey, K. S. Rahman, M. A. Matin, Nowshad Amin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

CdTe is a very potential binary semiconductor material for solar photovoltaic application due to its superior optoelectronic properties. The overall performances of incorporating Cd1-XZnxS window layer in lieu of CdS layer in CdTe solar cell were investigated by SCAPS-1D simulator. The Cd1-XZnxS is an alloy of CdS and ZnS which increase band gap of window layer from 2.42 e V to 3.7 e V as a function of x (from x=0 to 1). The spectral response of the design Cd1-xZnxS}/CdTe cell improves in blue region which implies the big improvement of short-circuit current density Jsc. In addition, in the traditional back contact of CdTe cell a small positive conduction band (Δ Ec} < 0.3eV) offset is necessary to reduce the forward current J0 as well as the recombination losses in the back contact interface. To achieve this goal a highly doped ZnTe: Cu extra layer was used as an electron reflector (ER) above back contact. Furthermore, this ER interface allows electron tunnelling by reducing the barrier height of the valence band which in turn leads to an improvement of open-circuit voltage and fill factor. The performance of the proposed cell was examined by varying thickness and doping concentration of Transparent Conducting Oxide (TCO) layer, window layer, absorber layer and finally ER layer. The simulated results of the proposed cell had shown that the open-circuit voltage (Voc) overcame the 1-volt barrier of CdTe cell with energy conversion efficiencies of 19.93 %.

Original languageEnglish
Title of host publication2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538691113
DOIs
Publication statusPublished - 1 Apr 2019
Externally publishedYes
Event2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019 - Cox's Bazar, Bangladesh
Duration: 7 Feb 20199 Feb 2019

Publication series

Name2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019

Conference

Conference2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019
CountryBangladesh
CityCox's Bazar
Period7/2/199/2/19

Fingerprint

Solar cells
solar cells
Open circuit voltage
Electrons
Computer simulation
Electron tunneling
simulation
Valence bands
reflectors
Conduction bands
Energy conversion
Short circuit currents
Optoelectronic devices
cells
Conversion efficiency
Energy gap
Current density
Simulators
open circuit voltage
Doping (additives)

Keywords

  • back contact
  • Cd Zn S window layer
  • CdTe Solar cell
  • ZnTe:Cu electron reflector

ASJC Scopus subject areas

  • Information Systems
  • Instrumentation
  • Signal Processing
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Computer Networks and Communications

Cite this

Das, N. K., Sengupta, A. K., Dey, M., Rahman, K. S., Matin, M. A., & Amin, N. (2019). Effect of Cd 1-x Zn x S Window Layer Incorporation in CdTe Solar Cell by Numerical Simulation In 2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019 [8679444] (2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECACE.2019.8679444

Effect of Cd 1-x Zn x S Window Layer Incorporation in CdTe Solar Cell by Numerical Simulation . / Das, N. K.; Sengupta, A. K.; Dey, Mrinmoy; Rahman, K. S.; Matin, M. A.; Amin, Nowshad.

2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8679444 (2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Das, NK, Sengupta, AK, Dey, M, Rahman, KS, Matin, MA & Amin, N 2019, Effect of Cd 1-x Zn x S Window Layer Incorporation in CdTe Solar Cell by Numerical Simulation in 2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019., 8679444, 2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019, Institute of Electrical and Electronics Engineers Inc., 2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019, Cox's Bazar, Bangladesh, 7/2/19. https://doi.org/10.1109/ECACE.2019.8679444
Das NK, Sengupta AK, Dey M, Rahman KS, Matin MA, Amin N. Effect of Cd 1-x Zn x S Window Layer Incorporation in CdTe Solar Cell by Numerical Simulation In 2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8679444. (2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019). https://doi.org/10.1109/ECACE.2019.8679444
Das, N. K. ; Sengupta, A. K. ; Dey, Mrinmoy ; Rahman, K. S. ; Matin, M. A. ; Amin, Nowshad. / Effect of Cd 1-x Zn x S Window Layer Incorporation in CdTe Solar Cell by Numerical Simulation 2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019).
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abstract = "CdTe is a very potential binary semiconductor material for solar photovoltaic application due to its superior optoelectronic properties. The overall performances of incorporating Cd1-XZnxS window layer in lieu of CdS layer in CdTe solar cell were investigated by SCAPS-1D simulator. The Cd1-XZnxS is an alloy of CdS and ZnS which increase band gap of window layer from 2.42 e V to 3.7 e V as a function of x (from x=0 to 1). The spectral response of the design Cd1-xZnxS}/CdTe cell improves in blue region which implies the big improvement of short-circuit current density Jsc. In addition, in the traditional back contact of CdTe cell a small positive conduction band (Δ Ec} < 0.3eV) offset is necessary to reduce the forward current J0 as well as the recombination losses in the back contact interface. To achieve this goal a highly doped ZnTe: Cu extra layer was used as an electron reflector (ER) above back contact. Furthermore, this ER interface allows electron tunnelling by reducing the barrier height of the valence band which in turn leads to an improvement of open-circuit voltage and fill factor. The performance of the proposed cell was examined by varying thickness and doping concentration of Transparent Conducting Oxide (TCO) layer, window layer, absorber layer and finally ER layer. The simulated results of the proposed cell had shown that the open-circuit voltage (Voc) overcame the 1-volt barrier of CdTe cell with energy conversion efficiencies of 19.93 {\%}.",
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N2 - CdTe is a very potential binary semiconductor material for solar photovoltaic application due to its superior optoelectronic properties. The overall performances of incorporating Cd1-XZnxS window layer in lieu of CdS layer in CdTe solar cell were investigated by SCAPS-1D simulator. The Cd1-XZnxS is an alloy of CdS and ZnS which increase band gap of window layer from 2.42 e V to 3.7 e V as a function of x (from x=0 to 1). The spectral response of the design Cd1-xZnxS}/CdTe cell improves in blue region which implies the big improvement of short-circuit current density Jsc. In addition, in the traditional back contact of CdTe cell a small positive conduction band (Δ Ec} < 0.3eV) offset is necessary to reduce the forward current J0 as well as the recombination losses in the back contact interface. To achieve this goal a highly doped ZnTe: Cu extra layer was used as an electron reflector (ER) above back contact. Furthermore, this ER interface allows electron tunnelling by reducing the barrier height of the valence band which in turn leads to an improvement of open-circuit voltage and fill factor. The performance of the proposed cell was examined by varying thickness and doping concentration of Transparent Conducting Oxide (TCO) layer, window layer, absorber layer and finally ER layer. The simulated results of the proposed cell had shown that the open-circuit voltage (Voc) overcame the 1-volt barrier of CdTe cell with energy conversion efficiencies of 19.93 %.

AB - CdTe is a very potential binary semiconductor material for solar photovoltaic application due to its superior optoelectronic properties. The overall performances of incorporating Cd1-XZnxS window layer in lieu of CdS layer in CdTe solar cell were investigated by SCAPS-1D simulator. The Cd1-XZnxS is an alloy of CdS and ZnS which increase band gap of window layer from 2.42 e V to 3.7 e V as a function of x (from x=0 to 1). The spectral response of the design Cd1-xZnxS}/CdTe cell improves in blue region which implies the big improvement of short-circuit current density Jsc. In addition, in the traditional back contact of CdTe cell a small positive conduction band (Δ Ec} < 0.3eV) offset is necessary to reduce the forward current J0 as well as the recombination losses in the back contact interface. To achieve this goal a highly doped ZnTe: Cu extra layer was used as an electron reflector (ER) above back contact. Furthermore, this ER interface allows electron tunnelling by reducing the barrier height of the valence band which in turn leads to an improvement of open-circuit voltage and fill factor. The performance of the proposed cell was examined by varying thickness and doping concentration of Transparent Conducting Oxide (TCO) layer, window layer, absorber layer and finally ER layer. The simulated results of the proposed cell had shown that the open-circuit voltage (Voc) overcame the 1-volt barrier of CdTe cell with energy conversion efficiencies of 19.93 %.

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