EFFECT OF BASE INDIUM CONCENTRATION ON THE ELECTRICAL PROPERTIES OF THIN-FILM Cu//2S-Zn//xCD//1// minus //xS HETEROJUNCTIONS.

T. M. Razykov, M. A. Razykova

Research output: Contribution to journalArticle

Abstract

Studies of the effect of the doping level (DL) of the base over a wide range (10**1**2 less than equivalent to Nd less than equivalent to 10**1**7 cm** minus **3) on the dark and light volt-ampere, volt-capacitance, and spectral characteristics of thin-film Cu//2S-Zn//xCd//1// minus //xS heterojunctions are discussed. It is shown that it is possible to control the mechanisms of the photovoltaic effect by varying the DL.

Original languageEnglish
Pages (from-to)9-15
Number of pages7
JournalApplied Solar Energy (English translation of Geliotekhnika)
Volume18
Issue number6
Publication statusPublished - 1982
Externally publishedYes

Fingerprint

Indium
Electric properties
Doping (additives)
Photovoltaic effects
Thin films
Heterojunctions
Capacitance

ASJC Scopus subject areas

  • Fuel Technology
  • Renewable Energy, Sustainability and the Environment

Cite this

EFFECT OF BASE INDIUM CONCENTRATION ON THE ELECTRICAL PROPERTIES OF THIN-FILM Cu//2S-Zn//xCD//1// minus //xS HETEROJUNCTIONS. / Razykov, T. M.; Razykova, M. A.

In: Applied Solar Energy (English translation of Geliotekhnika), Vol. 18, No. 6, 1982, p. 9-15.

Research output: Contribution to journalArticle

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