EFFECT OF BASE DOPING ON THE ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF THE THIN-FILM Cu//2S-CdS HETEROJUNCTION.

G. Ya Umarov, Kh T. Akramov, T. M. Razykov, A. T. Teshabaev

Research output: Contribution to journalArticle

Abstract

The effect of the concentration of dopands (indium and gallium) in CdS in the range 10**1**2 less than Nd less than 10**1**7 cm** minus **3 on the characteristics of the heterojunctions and the photovoltaic parameters of the thin-film Cu//2S-CdS heterojunction produced by the gas-transport method has been investigated. The photo-emf and the spectral sensitivity of the heterosystem were found to depend on the degree of doping. It is shown that at high doping levels, the main contribution to the photovoltaic effect is due to photoexcited carriers in the barrier layer. The mechanism responsible for the crossing of the dark and light current-voltage characteristics is elucidated and it is suggested that it is due to the photoconductivity of the base.

Original languageEnglish
Pages (from-to)15-18
Number of pages4
JournalApplied Solar Energy (English translation of Geliotekhnika)
Volume13
Issue number3
Publication statusPublished - 1977
Externally publishedYes

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Heterojunctions
Doping (additives)
Photovoltaic effects
Thin films
Photoconductivity
Gallium
Current voltage characteristics
Indium
Electric potential
Gases

ASJC Scopus subject areas

  • Fuel Technology
  • Renewable Energy, Sustainability and the Environment

Cite this

EFFECT OF BASE DOPING ON THE ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF THE THIN-FILM Cu//2S-CdS HETEROJUNCTION. / Umarov, G. Ya; Akramov, Kh T.; Razykov, T. M.; Teshabaev, A. T.

In: Applied Solar Energy (English translation of Geliotekhnika), Vol. 13, No. 3, 1977, p. 15-18.

Research output: Contribution to journalArticle

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