Effect of argon-oxygen flow rate ratio in magnetron sputtering on morphology and hygroscopic property of SnO2 thin film

M. Faris Shahin Shahidan, Rozidawati Awang

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4 Citations (Scopus)

Abstract

Thin films of tin dioxide (SnO2) were deposited by DC magnetron sputtering on quartz substrate at room temperature in different argon-oxygen gas flow rate ratio i.e. Ar:O2 = 100:20 sccm, 90:30 sccm, 80:40 sccm, 70:50 sccm and 60:60 sccm. X-ray diffraction (XRD) patterns show that as-deposited SnO2 thin films are amorphous. Post-annealing process in air at 500°C for 1 h resulted in semicrystalline SnO2 that has tetragonal structure with spatial group of P42/mnm (136). Transmission electron microscope (TEM) analysis confirmed that the semicrystalline nature of the films after annealing was due to crystal growth. The surface morphology studied by field emission scanning electron microscope (FESEM) shows that the increase of argon flow rate lead to increment of the thickness and the crack size on the films surface. From the humidity response test, SnO2 thin film that was deposited at maximum argon flow and minimum oxygen flow rate i.e Ar:O2 = 100:20 showed negative sensitivity gradient. This shows that it has an opposing behaviour from n-type semiconductor due to its non-stoichiometric state caused by high oxygen vacancies. While SnO2 thin film that was deposited at minimum argon flow and maximum oxygen flow rate i.e. Ar:O2 = 60:60 showed the highest sensitivity (positive gradient) with slight fluctuation of repeatability. It was determined that at argon-oxygen flow rate ratio of Ar:O2 = 70:50 yielded a SnO2 thin film with high sensitivity (positive gradient) and good repeatability towards relative humidity showing it is environmentally stable.

Original languageEnglish
Pages (from-to)6886-6901
Number of pages16
JournalInternational Journal of Electrochemical Science
Volume11
Issue number8
DOIs
Publication statusPublished - 2016

Fingerprint

Argon
Magnetron sputtering
Flow rate
Oxygen
Thin films
Atmospheric humidity
Electron microscopes
Annealing
Tin dioxide
Quartz
Oxygen vacancies
Crystallization
Crystal growth
Field emission
Diffraction patterns
Surface morphology
Flow of gases
Semiconductor materials
Cracks
Scanning

Keywords

  • Cracks
  • FESEM
  • Humidity
  • TEM
  • Thickness

ASJC Scopus subject areas

  • Electrochemistry

Cite this

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title = "Effect of argon-oxygen flow rate ratio in magnetron sputtering on morphology and hygroscopic property of SnO2 thin film",
abstract = "Thin films of tin dioxide (SnO2) were deposited by DC magnetron sputtering on quartz substrate at room temperature in different argon-oxygen gas flow rate ratio i.e. Ar:O2 = 100:20 sccm, 90:30 sccm, 80:40 sccm, 70:50 sccm and 60:60 sccm. X-ray diffraction (XRD) patterns show that as-deposited SnO2 thin films are amorphous. Post-annealing process in air at 500°C for 1 h resulted in semicrystalline SnO2 that has tetragonal structure with spatial group of P42/mnm (136). Transmission electron microscope (TEM) analysis confirmed that the semicrystalline nature of the films after annealing was due to crystal growth. The surface morphology studied by field emission scanning electron microscope (FESEM) shows that the increase of argon flow rate lead to increment of the thickness and the crack size on the films surface. From the humidity response test, SnO2 thin film that was deposited at maximum argon flow and minimum oxygen flow rate i.e Ar:O2 = 100:20 showed negative sensitivity gradient. This shows that it has an opposing behaviour from n-type semiconductor due to its non-stoichiometric state caused by high oxygen vacancies. While SnO2 thin film that was deposited at minimum argon flow and maximum oxygen flow rate i.e. Ar:O2 = 60:60 showed the highest sensitivity (positive gradient) with slight fluctuation of repeatability. It was determined that at argon-oxygen flow rate ratio of Ar:O2 = 70:50 yielded a SnO2 thin film with high sensitivity (positive gradient) and good repeatability towards relative humidity showing it is environmentally stable.",
keywords = "Cracks, FESEM, Humidity, TEM, Thickness",
author = "{Faris Shahin Shahidan}, M. and Rozidawati Awang",
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T1 - Effect of argon-oxygen flow rate ratio in magnetron sputtering on morphology and hygroscopic property of SnO2 thin film

AU - Faris Shahin Shahidan, M.

AU - Awang, Rozidawati

PY - 2016

Y1 - 2016

N2 - Thin films of tin dioxide (SnO2) were deposited by DC magnetron sputtering on quartz substrate at room temperature in different argon-oxygen gas flow rate ratio i.e. Ar:O2 = 100:20 sccm, 90:30 sccm, 80:40 sccm, 70:50 sccm and 60:60 sccm. X-ray diffraction (XRD) patterns show that as-deposited SnO2 thin films are amorphous. Post-annealing process in air at 500°C for 1 h resulted in semicrystalline SnO2 that has tetragonal structure with spatial group of P42/mnm (136). Transmission electron microscope (TEM) analysis confirmed that the semicrystalline nature of the films after annealing was due to crystal growth. The surface morphology studied by field emission scanning electron microscope (FESEM) shows that the increase of argon flow rate lead to increment of the thickness and the crack size on the films surface. From the humidity response test, SnO2 thin film that was deposited at maximum argon flow and minimum oxygen flow rate i.e Ar:O2 = 100:20 showed negative sensitivity gradient. This shows that it has an opposing behaviour from n-type semiconductor due to its non-stoichiometric state caused by high oxygen vacancies. While SnO2 thin film that was deposited at minimum argon flow and maximum oxygen flow rate i.e. Ar:O2 = 60:60 showed the highest sensitivity (positive gradient) with slight fluctuation of repeatability. It was determined that at argon-oxygen flow rate ratio of Ar:O2 = 70:50 yielded a SnO2 thin film with high sensitivity (positive gradient) and good repeatability towards relative humidity showing it is environmentally stable.

AB - Thin films of tin dioxide (SnO2) were deposited by DC magnetron sputtering on quartz substrate at room temperature in different argon-oxygen gas flow rate ratio i.e. Ar:O2 = 100:20 sccm, 90:30 sccm, 80:40 sccm, 70:50 sccm and 60:60 sccm. X-ray diffraction (XRD) patterns show that as-deposited SnO2 thin films are amorphous. Post-annealing process in air at 500°C for 1 h resulted in semicrystalline SnO2 that has tetragonal structure with spatial group of P42/mnm (136). Transmission electron microscope (TEM) analysis confirmed that the semicrystalline nature of the films after annealing was due to crystal growth. The surface morphology studied by field emission scanning electron microscope (FESEM) shows that the increase of argon flow rate lead to increment of the thickness and the crack size on the films surface. From the humidity response test, SnO2 thin film that was deposited at maximum argon flow and minimum oxygen flow rate i.e Ar:O2 = 100:20 showed negative sensitivity gradient. This shows that it has an opposing behaviour from n-type semiconductor due to its non-stoichiometric state caused by high oxygen vacancies. While SnO2 thin film that was deposited at minimum argon flow and maximum oxygen flow rate i.e. Ar:O2 = 60:60 showed the highest sensitivity (positive gradient) with slight fluctuation of repeatability. It was determined that at argon-oxygen flow rate ratio of Ar:O2 = 70:50 yielded a SnO2 thin film with high sensitivity (positive gradient) and good repeatability towards relative humidity showing it is environmentally stable.

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