Effect of annealing temperature on the microstructure and dielectric properties of Ba0.6 Sr0.4TiO3 thin films prepared by sol-gel process

R. Dewi, Noor Baa`Yah Ibrahim, I. A. Talib, Zahari Ibarahim

Research output: Contribution to journalArticle

Abstract

Thin films of barium strontium titanate (Ba0.6Sr0.4TiO3) perovskite system are promising candidates for microelectronic devices that can be integrated with semiconductor technology. Ba0.6 Sr0.4TiO3 thin films have been prepared onto BST/TiO2/RuO2/SiO2/Si substrate using the spin coating and sol-gel process. Then the samples were subsequently annealed at 600°C, 650°C and 700°C for 60 minutes in air. The microstructure and dielectric properties show that the crystallization improved as the annealing temperature was increased. All of the films have nanometer grain size. The average grain size of the films increased as the temperature was increased. The dielectric constant and ac conductivity of the films also increased as the average grain size increased. These results showed that the microstructure and dielectric properties depend on the annealing temperature.

Original languageEnglish
Pages (from-to)261-264
Number of pages4
JournalSains Malaysiana
Volume37
Issue number3
Publication statusPublished - Sep 2008

Fingerprint

sol-gel processes
dielectric properties
grain size
microstructure
annealing
thin films
microelectronics
strontium
barium
temperature
coating
crystallization
permittivity
conductivity
air

Keywords

  • BST thin films
  • Dielectric constant
  • Electrical conductivity
  • Sol-gel process

ASJC Scopus subject areas

  • General

Cite this

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title = "Effect of annealing temperature on the microstructure and dielectric properties of Ba0.6 Sr0.4TiO3 thin films prepared by sol-gel process",
abstract = "Thin films of barium strontium titanate (Ba0.6Sr0.4TiO3) perovskite system are promising candidates for microelectronic devices that can be integrated with semiconductor technology. Ba0.6 Sr0.4TiO3 thin films have been prepared onto BST/TiO2/RuO2/SiO2/Si substrate using the spin coating and sol-gel process. Then the samples were subsequently annealed at 600°C, 650°C and 700°C for 60 minutes in air. The microstructure and dielectric properties show that the crystallization improved as the annealing temperature was increased. All of the films have nanometer grain size. The average grain size of the films increased as the temperature was increased. The dielectric constant and ac conductivity of the films also increased as the average grain size increased. These results showed that the microstructure and dielectric properties depend on the annealing temperature.",
keywords = "BST thin films, Dielectric constant, Electrical conductivity, Sol-gel process",
author = "R. Dewi and Ibrahim, {Noor Baa`Yah} and Talib, {I. A.} and Zahari Ibarahim",
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TY - JOUR

T1 - Effect of annealing temperature on the microstructure and dielectric properties of Ba0.6 Sr0.4TiO3 thin films prepared by sol-gel process

AU - Dewi, R.

AU - Ibrahim, Noor Baa`Yah

AU - Talib, I. A.

AU - Ibarahim, Zahari

PY - 2008/9

Y1 - 2008/9

N2 - Thin films of barium strontium titanate (Ba0.6Sr0.4TiO3) perovskite system are promising candidates for microelectronic devices that can be integrated with semiconductor technology. Ba0.6 Sr0.4TiO3 thin films have been prepared onto BST/TiO2/RuO2/SiO2/Si substrate using the spin coating and sol-gel process. Then the samples were subsequently annealed at 600°C, 650°C and 700°C for 60 minutes in air. The microstructure and dielectric properties show that the crystallization improved as the annealing temperature was increased. All of the films have nanometer grain size. The average grain size of the films increased as the temperature was increased. The dielectric constant and ac conductivity of the films also increased as the average grain size increased. These results showed that the microstructure and dielectric properties depend on the annealing temperature.

AB - Thin films of barium strontium titanate (Ba0.6Sr0.4TiO3) perovskite system are promising candidates for microelectronic devices that can be integrated with semiconductor technology. Ba0.6 Sr0.4TiO3 thin films have been prepared onto BST/TiO2/RuO2/SiO2/Si substrate using the spin coating and sol-gel process. Then the samples were subsequently annealed at 600°C, 650°C and 700°C for 60 minutes in air. The microstructure and dielectric properties show that the crystallization improved as the annealing temperature was increased. All of the films have nanometer grain size. The average grain size of the films increased as the temperature was increased. The dielectric constant and ac conductivity of the films also increased as the average grain size increased. These results showed that the microstructure and dielectric properties depend on the annealing temperature.

KW - BST thin films

KW - Dielectric constant

KW - Electrical conductivity

KW - Sol-gel process

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