Effect of annealing temperature on photoelectrochemical properties of WO<inf>3</inf>/Fe<inf>2</inf>O<inf>3</inf> photoelectrodes

K. H. Ng, W. F. Mark-Lee, Lorna Effery Minggu, Mohammad Kassim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

WO<inf>3</inf> thin film was prepared by simple electrodeposition while Fe<inf>2</inf>O<inf>3</inf> was deposited onto the WO<inf>3</inf> layer by chemical bath deposition. Post-annealing temperature was found to have drastic effect on the photoelectrochemical performance of these films. The light absorption range of the bilayer photoelectrodes was improved from 450 nm to 525 nm. Flat band potentials of the bilayer photoelectrodes were obtained from Mott-Schottky plot and they were shifted to higher potential. Photocurrent density produced by bilayer photoelectrode annealed at 450 °C was 1.89 times greater than monolayer WO<inf>3</inf> photoelectrode under standard illumination conditions (AM 1.5, 100 mW/cm<sup>2</sup>).

Original languageEnglish
Title of host publicationIET Seminar Digest
PublisherInstitution of Engineering and Technology
Volume2014
EditionCP659
DOIs
Publication statusPublished - 2014
Event3rd IET International Conference on Clean Energy and Technology, CEAT 2014 - Kuching, Malaysia
Duration: 24 Nov 201426 Nov 2014

Other

Other3rd IET International Conference on Clean Energy and Technology, CEAT 2014
CountryMalaysia
CityKuching
Period24/11/1426/11/14

Fingerprint

Photocurrents
Electrodeposition
Light absorption
Monolayers
Lighting
Annealing
Thin films
Temperature

Keywords

  • Iron oxide
  • Photoelectrochemical
  • Tungsten trioxide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Effect of annealing temperature on photoelectrochemical properties of WO<inf>3</inf>/Fe<inf>2</inf>O<inf>3</inf> photoelectrodes. / Ng, K. H.; Mark-Lee, W. F.; Effery Minggu, Lorna; Kassim, Mohammad.

IET Seminar Digest. Vol. 2014 CP659. ed. Institution of Engineering and Technology, 2014.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ng, KH, Mark-Lee, WF, Effery Minggu, L & Kassim, M 2014, Effect of annealing temperature on photoelectrochemical properties of WO<inf>3</inf>/Fe<inf>2</inf>O<inf>3</inf> photoelectrodes. in IET Seminar Digest. CP659 edn, vol. 2014, Institution of Engineering and Technology, 3rd IET International Conference on Clean Energy and Technology, CEAT 2014, Kuching, Malaysia, 24/11/14. https://doi.org/10.1049/cp.2014.1459
Ng, K. H. ; Mark-Lee, W. F. ; Effery Minggu, Lorna ; Kassim, Mohammad. / Effect of annealing temperature on photoelectrochemical properties of WO<inf>3</inf>/Fe<inf>2</inf>O<inf>3</inf> photoelectrodes. IET Seminar Digest. Vol. 2014 CP659. ed. Institution of Engineering and Technology, 2014.
@inproceedings{0e08b8d345ea4aaeb0b8e522242d8cee,
title = "Effect of annealing temperature on photoelectrochemical properties of WO3/Fe2O3 photoelectrodes",
abstract = "WO3 thin film was prepared by simple electrodeposition while Fe2O3 was deposited onto the WO3 layer by chemical bath deposition. Post-annealing temperature was found to have drastic effect on the photoelectrochemical performance of these films. The light absorption range of the bilayer photoelectrodes was improved from 450 nm to 525 nm. Flat band potentials of the bilayer photoelectrodes were obtained from Mott-Schottky plot and they were shifted to higher potential. Photocurrent density produced by bilayer photoelectrode annealed at 450 °C was 1.89 times greater than monolayer WO3 photoelectrode under standard illumination conditions (AM 1.5, 100 mW/cm2).",
keywords = "Iron oxide, Photoelectrochemical, Tungsten trioxide",
author = "Ng, {K. H.} and Mark-Lee, {W. F.} and {Effery Minggu}, Lorna and Mohammad Kassim",
year = "2014",
doi = "10.1049/cp.2014.1459",
language = "English",
volume = "2014",
booktitle = "IET Seminar Digest",
publisher = "Institution of Engineering and Technology",
edition = "CP659",

}

TY - GEN

T1 - Effect of annealing temperature on photoelectrochemical properties of WO3/Fe2O3 photoelectrodes

AU - Ng, K. H.

AU - Mark-Lee, W. F.

AU - Effery Minggu, Lorna

AU - Kassim, Mohammad

PY - 2014

Y1 - 2014

N2 - WO3 thin film was prepared by simple electrodeposition while Fe2O3 was deposited onto the WO3 layer by chemical bath deposition. Post-annealing temperature was found to have drastic effect on the photoelectrochemical performance of these films. The light absorption range of the bilayer photoelectrodes was improved from 450 nm to 525 nm. Flat band potentials of the bilayer photoelectrodes were obtained from Mott-Schottky plot and they were shifted to higher potential. Photocurrent density produced by bilayer photoelectrode annealed at 450 °C was 1.89 times greater than monolayer WO3 photoelectrode under standard illumination conditions (AM 1.5, 100 mW/cm2).

AB - WO3 thin film was prepared by simple electrodeposition while Fe2O3 was deposited onto the WO3 layer by chemical bath deposition. Post-annealing temperature was found to have drastic effect on the photoelectrochemical performance of these films. The light absorption range of the bilayer photoelectrodes was improved from 450 nm to 525 nm. Flat band potentials of the bilayer photoelectrodes were obtained from Mott-Schottky plot and they were shifted to higher potential. Photocurrent density produced by bilayer photoelectrode annealed at 450 °C was 1.89 times greater than monolayer WO3 photoelectrode under standard illumination conditions (AM 1.5, 100 mW/cm2).

KW - Iron oxide

KW - Photoelectrochemical

KW - Tungsten trioxide

UR - http://www.scopus.com/inward/record.url?scp=84939492222&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84939492222&partnerID=8YFLogxK

U2 - 10.1049/cp.2014.1459

DO - 10.1049/cp.2014.1459

M3 - Conference contribution

AN - SCOPUS:84939492222

VL - 2014

BT - IET Seminar Digest

PB - Institution of Engineering and Technology

ER -