Effect of annealing temperature of Sol-Gel TiO 2 buffer layer on microstructure and electrical properties of Ba 0.6Sr 0.4TiO 3 films

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3 Citations (Scopus)

Abstract

Ba 0.6Sr 0.4TiO 3 (BST) thin films were prepared on TiO 2 buffer layers. The buffer layers were prepared using sol-gel method, followed by annealing process at different temperature from 300 to 550°C with 50°C interval for 30 min in air. The microstructure and electrical properties of BST were then investigated. Increasing the annealing temperature increased. The buffer layer thickness BST films prepared on thicker buffer layer showed improved crystallinity. Without the buffer layer, BST crystallization cannot occur at 700°C. However with buffer layer, 700°C is sufficient for the process to occur. The BST grain size increased with the buffer grains increment. The existence of TiO 2 buffer layer increased the current density. The dielectric constant, ε r′ and dielectric loss were not affected much by the buffer layer except at frequency around 1 kHz that showed an increment in the ε r' value with the increment of the annealing temperature.

Original languageEnglish
Pages (from-to)339-344
Number of pages6
JournalSains Malaysiana
Volume41
Issue number3
Publication statusPublished - Mar 2012

Fingerprint

buffers
electrical properties
gels
microstructure
annealing
temperature
dielectric loss
crystallinity
film thickness
grain size
crystallization
permittivity
current density
intervals
air
thin films

Keywords

  • Annealing
  • Buffer layer
  • Electrical properties
  • Sol-gel

ASJC Scopus subject areas

  • General

Cite this

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title = "Effect of annealing temperature of Sol-Gel TiO 2 buffer layer on microstructure and electrical properties of Ba 0.6Sr 0.4TiO 3 films",
abstract = "Ba 0.6Sr 0.4TiO 3 (BST) thin films were prepared on TiO 2 buffer layers. The buffer layers were prepared using sol-gel method, followed by annealing process at different temperature from 300 to 550°C with 50°C interval for 30 min in air. The microstructure and electrical properties of BST were then investigated. Increasing the annealing temperature increased. The buffer layer thickness BST films prepared on thicker buffer layer showed improved crystallinity. Without the buffer layer, BST crystallization cannot occur at 700°C. However with buffer layer, 700°C is sufficient for the process to occur. The BST grain size increased with the buffer grains increment. The existence of TiO 2 buffer layer increased the current density. The dielectric constant, ε r′ and dielectric loss were not affected much by the buffer layer except at frequency around 1 kHz that showed an increment in the ε r' value with the increment of the annealing temperature.",
keywords = "Annealing, Buffer layer, Electrical properties, Sol-gel",
author = "Ibrahim, {Noor Baa`Yah} and E. Yusrianto and Zalita Zainuddin and Zahari Ibarahim",
year = "2012",
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language = "English",
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pages = "339--344",
journal = "Sains Malaysiana",
issn = "0126-6039",
publisher = "Penerbit Universiti Kebangsaan Malaysia",
number = "3",

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TY - JOUR

T1 - Effect of annealing temperature of Sol-Gel TiO 2 buffer layer on microstructure and electrical properties of Ba 0.6Sr 0.4TiO 3 films

AU - Ibrahim, Noor Baa`Yah

AU - Yusrianto, E.

AU - Zainuddin, Zalita

AU - Ibarahim, Zahari

PY - 2012/3

Y1 - 2012/3

N2 - Ba 0.6Sr 0.4TiO 3 (BST) thin films were prepared on TiO 2 buffer layers. The buffer layers were prepared using sol-gel method, followed by annealing process at different temperature from 300 to 550°C with 50°C interval for 30 min in air. The microstructure and electrical properties of BST were then investigated. Increasing the annealing temperature increased. The buffer layer thickness BST films prepared on thicker buffer layer showed improved crystallinity. Without the buffer layer, BST crystallization cannot occur at 700°C. However with buffer layer, 700°C is sufficient for the process to occur. The BST grain size increased with the buffer grains increment. The existence of TiO 2 buffer layer increased the current density. The dielectric constant, ε r′ and dielectric loss were not affected much by the buffer layer except at frequency around 1 kHz that showed an increment in the ε r' value with the increment of the annealing temperature.

AB - Ba 0.6Sr 0.4TiO 3 (BST) thin films were prepared on TiO 2 buffer layers. The buffer layers were prepared using sol-gel method, followed by annealing process at different temperature from 300 to 550°C with 50°C interval for 30 min in air. The microstructure and electrical properties of BST were then investigated. Increasing the annealing temperature increased. The buffer layer thickness BST films prepared on thicker buffer layer showed improved crystallinity. Without the buffer layer, BST crystallization cannot occur at 700°C. However with buffer layer, 700°C is sufficient for the process to occur. The BST grain size increased with the buffer grains increment. The existence of TiO 2 buffer layer increased the current density. The dielectric constant, ε r′ and dielectric loss were not affected much by the buffer layer except at frequency around 1 kHz that showed an increment in the ε r' value with the increment of the annealing temperature.

KW - Annealing

KW - Buffer layer

KW - Electrical properties

KW - Sol-gel

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