Effect of annealing on the sol-gel derived SrBi4Ti 4O15 thin films for piezoelectric pressure sensors

Nor Azlian Abdul Manaf, Muhamad Mat Sallch, Muhammad Yahaya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper reports the effect of annealing on fabrication of Strontium Bismuth Titanate SrBi4Ti4O15 (SBT) thin films for piezoelectric pressure sensors. The SBT films and capacitance devices with structure of Al/TiO2/SBT/TiO2/SiO2/Si were fabricated using sol-gel technique. The microstructure of SBT thin films have been systematically studied in as-prepared (unannealed) condition as well as after annealing at 400, 500, 600 and 700°C. The general trend seems to indicate that annealed temperature show better piezoelectric properties. X-ray diffraction patterns reveal changes of crystalline structure after annealing at 600°C temperature. Another important parameter is dielectric constant, which is found toward higher value within annealing temperature. For the sensor device measurement, the SBT thin film pressure sensors were tested by pneumatic loading method at pressure range between 0 to 450 kPa. It found that the sensors sensitive to the applied pressure and the response recovered back when the pressure were removed. The 600°C annealed pressure sensor demonstrates better repeatability compared to the others. The results indicated that the sensor performance was affected by the structure of the film. A crystalline structure gives an optimum response towards pneumatic pressure. However, the too high of annealing temperature may cause a catastrophic failure of the pressure sensor response, hence the existing of crack and inter diffusion between top and bottom electrode. The correlation between annealing process with structure of SBT pressure sensors and the piezoelectric properties will be discussed.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Pages14-19
Number of pages6
DOIs
Publication statusPublished - 2006
Event2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur
Duration: 29 Nov 20061 Dec 2006

Other

Other2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
CityKuala Lumpur
Period29/11/061/12/06

Fingerprint

Pressure sensors
Sol-gels
Annealing
Thin films
Pneumatics
Sensors
Crystalline materials
Temperature
Strontium
Bismuth
Diffraction patterns
Permittivity
Capacitance
Cracks
Fabrication
X ray diffraction
Microstructure
Electrodes

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Manaf, N. A. A., Sallch, M. M., & Yahaya, M. (2006). Effect of annealing on the sol-gel derived SrBi4Ti 4O15 thin films for piezoelectric pressure sensors. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 14-19). [4266561] https://doi.org/10.1109/SMELEC.2006.381011

Effect of annealing on the sol-gel derived SrBi4Ti 4O15 thin films for piezoelectric pressure sensors. / Manaf, Nor Azlian Abdul; Sallch, Muhamad Mat; Yahaya, Muhammad.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. p. 14-19 4266561.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Manaf, NAA, Sallch, MM & Yahaya, M 2006, Effect of annealing on the sol-gel derived SrBi4Ti 4O15 thin films for piezoelectric pressure sensors. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 4266561, pp. 14-19, 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006, Kuala Lumpur, 29/11/06. https://doi.org/10.1109/SMELEC.2006.381011
Manaf NAA, Sallch MM, Yahaya M. Effect of annealing on the sol-gel derived SrBi4Ti 4O15 thin films for piezoelectric pressure sensors. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. p. 14-19. 4266561 https://doi.org/10.1109/SMELEC.2006.381011
Manaf, Nor Azlian Abdul ; Sallch, Muhamad Mat ; Yahaya, Muhammad. / Effect of annealing on the sol-gel derived SrBi4Ti 4O15 thin films for piezoelectric pressure sensors. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. pp. 14-19
@inproceedings{62593e1bda9941f19c476d945984b0e0,
title = "Effect of annealing on the sol-gel derived SrBi4Ti 4O15 thin films for piezoelectric pressure sensors",
abstract = "This paper reports the effect of annealing on fabrication of Strontium Bismuth Titanate SrBi4Ti4O15 (SBT) thin films for piezoelectric pressure sensors. The SBT films and capacitance devices with structure of Al/TiO2/SBT/TiO2/SiO2/Si were fabricated using sol-gel technique. The microstructure of SBT thin films have been systematically studied in as-prepared (unannealed) condition as well as after annealing at 400, 500, 600 and 700°C. The general trend seems to indicate that annealed temperature show better piezoelectric properties. X-ray diffraction patterns reveal changes of crystalline structure after annealing at 600°C temperature. Another important parameter is dielectric constant, which is found toward higher value within annealing temperature. For the sensor device measurement, the SBT thin film pressure sensors were tested by pneumatic loading method at pressure range between 0 to 450 kPa. It found that the sensors sensitive to the applied pressure and the response recovered back when the pressure were removed. The 600°C annealed pressure sensor demonstrates better repeatability compared to the others. The results indicated that the sensor performance was affected by the structure of the film. A crystalline structure gives an optimum response towards pneumatic pressure. However, the too high of annealing temperature may cause a catastrophic failure of the pressure sensor response, hence the existing of crack and inter diffusion between top and bottom electrode. The correlation between annealing process with structure of SBT pressure sensors and the piezoelectric properties will be discussed.",
author = "Manaf, {Nor Azlian Abdul} and Sallch, {Muhamad Mat} and Muhammad Yahaya",
year = "2006",
doi = "10.1109/SMELEC.2006.381011",
language = "English",
isbn = "0780397312",
pages = "14--19",
booktitle = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",

}

TY - GEN

T1 - Effect of annealing on the sol-gel derived SrBi4Ti 4O15 thin films for piezoelectric pressure sensors

AU - Manaf, Nor Azlian Abdul

AU - Sallch, Muhamad Mat

AU - Yahaya, Muhammad

PY - 2006

Y1 - 2006

N2 - This paper reports the effect of annealing on fabrication of Strontium Bismuth Titanate SrBi4Ti4O15 (SBT) thin films for piezoelectric pressure sensors. The SBT films and capacitance devices with structure of Al/TiO2/SBT/TiO2/SiO2/Si were fabricated using sol-gel technique. The microstructure of SBT thin films have been systematically studied in as-prepared (unannealed) condition as well as after annealing at 400, 500, 600 and 700°C. The general trend seems to indicate that annealed temperature show better piezoelectric properties. X-ray diffraction patterns reveal changes of crystalline structure after annealing at 600°C temperature. Another important parameter is dielectric constant, which is found toward higher value within annealing temperature. For the sensor device measurement, the SBT thin film pressure sensors were tested by pneumatic loading method at pressure range between 0 to 450 kPa. It found that the sensors sensitive to the applied pressure and the response recovered back when the pressure were removed. The 600°C annealed pressure sensor demonstrates better repeatability compared to the others. The results indicated that the sensor performance was affected by the structure of the film. A crystalline structure gives an optimum response towards pneumatic pressure. However, the too high of annealing temperature may cause a catastrophic failure of the pressure sensor response, hence the existing of crack and inter diffusion between top and bottom electrode. The correlation between annealing process with structure of SBT pressure sensors and the piezoelectric properties will be discussed.

AB - This paper reports the effect of annealing on fabrication of Strontium Bismuth Titanate SrBi4Ti4O15 (SBT) thin films for piezoelectric pressure sensors. The SBT films and capacitance devices with structure of Al/TiO2/SBT/TiO2/SiO2/Si were fabricated using sol-gel technique. The microstructure of SBT thin films have been systematically studied in as-prepared (unannealed) condition as well as after annealing at 400, 500, 600 and 700°C. The general trend seems to indicate that annealed temperature show better piezoelectric properties. X-ray diffraction patterns reveal changes of crystalline structure after annealing at 600°C temperature. Another important parameter is dielectric constant, which is found toward higher value within annealing temperature. For the sensor device measurement, the SBT thin film pressure sensors were tested by pneumatic loading method at pressure range between 0 to 450 kPa. It found that the sensors sensitive to the applied pressure and the response recovered back when the pressure were removed. The 600°C annealed pressure sensor demonstrates better repeatability compared to the others. The results indicated that the sensor performance was affected by the structure of the film. A crystalline structure gives an optimum response towards pneumatic pressure. However, the too high of annealing temperature may cause a catastrophic failure of the pressure sensor response, hence the existing of crack and inter diffusion between top and bottom electrode. The correlation between annealing process with structure of SBT pressure sensors and the piezoelectric properties will be discussed.

UR - http://www.scopus.com/inward/record.url?scp=35148841498&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=35148841498&partnerID=8YFLogxK

U2 - 10.1109/SMELEC.2006.381011

DO - 10.1109/SMELEC.2006.381011

M3 - Conference contribution

AN - SCOPUS:35148841498

SN - 0780397312

SN - 9780780397316

SP - 14

EP - 19

BT - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

ER -