Effect of annealing on the properties of Zn xCd 1-xS thin film growth by RF magnetron co-sputtering

M. S. Hossain, M. A. Islam, M. M. Aliyu, P. Chelvanathan, T. Razykov, Kamaruzzaman Sopian, Nowshad Amin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Abstract

Zn xCd 1-xS thin films at low zinc content have been deposited on bare soda lime glass substrates using RF magnetron co-sputtering of CdS and ZnS for the first time to investigate annealing effect on the structural and optical properties of the thin films. The as-deposited films were annealed in O 2/N 2 ambient at annealing temperature ranging 200-500 °C. The composition of the films was controlled by varying RF power of CdS and ZnS in such a ratio so that zinc content in the thin films was low. The composition, structural, optical and surface morphological properties of the films was investigated using EDX, XRD, UV-Vis spectrophotometer and FESEM. The annealed films were observed hexagonal wurtzite structure with strong preferential orientation along (002) diffraction peak. Crystallinity of the films increased with increasing annealing temperature below 400°C whereas beyond 400°C new peaks were observed along with decreasing trend of (002) diffraction peak. Optical absorption and transmission spectra were recorded within the range 300-900 nm. With increasing annealing temperature, the band gap of the annealed films once decreased and then abruptly increased at around 400°C. The decreased bandgap may have been due to possible increase in the crystalline nature of the material. From SEM, it was observed that the thin films were formed by different clusters of grains which later changed to isolated grains as the annealing temperature increased. This work confirms that annealing temperature has overbearing influence on the Zn xCd 1-xS thin film properties deposited by RF magnetron co-sputtering.

Original languageEnglish
Title of host publicationEnergy Procedia
PublisherElsevier BV
Pages214-222
Number of pages9
Volume33
DOIs
Publication statusPublished - 2013
Event2012 PV Asia Pacific Conference, PVAP 2012 - Singapore, Singapore
Duration: 23 Oct 201225 Oct 2012

Other

Other2012 PV Asia Pacific Conference, PVAP 2012
CountrySingapore
CitySingapore
Period23/10/1225/10/12

Fingerprint

Film growth
Sputtering
Annealing
Thin films
Energy gap
Zinc
Temperature
Diffraction
Ultraviolet spectrophotometers
Light transmission
Chemical analysis
Lime
Light absorption
Surface properties
Structural properties
Energy dispersive spectroscopy
Optical properties
Crystalline materials
Glass
Scanning electron microscopy

Keywords

  • Annealing
  • Co-sputtering
  • Grains
  • RF power

ASJC Scopus subject areas

  • Energy(all)

Cite this

Hossain, M. S., Islam, M. A., Aliyu, M. M., Chelvanathan, P., Razykov, T., Sopian, K., & Amin, N. (2013). Effect of annealing on the properties of Zn xCd 1-xS thin film growth by RF magnetron co-sputtering In Energy Procedia (Vol. 33, pp. 214-222). Elsevier BV. https://doi.org/10.1016/j.egypro.2013.05.060

Effect of annealing on the properties of Zn xCd 1-xS thin film growth by RF magnetron co-sputtering . / Hossain, M. S.; Islam, M. A.; Aliyu, M. M.; Chelvanathan, P.; Razykov, T.; Sopian, Kamaruzzaman; Amin, Nowshad.

Energy Procedia. Vol. 33 Elsevier BV, 2013. p. 214-222.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hossain, MS, Islam, MA, Aliyu, MM, Chelvanathan, P, Razykov, T, Sopian, K & Amin, N 2013, Effect of annealing on the properties of Zn xCd 1-xS thin film growth by RF magnetron co-sputtering in Energy Procedia. vol. 33, Elsevier BV, pp. 214-222, 2012 PV Asia Pacific Conference, PVAP 2012, Singapore, Singapore, 23/10/12. https://doi.org/10.1016/j.egypro.2013.05.060
Hossain MS, Islam MA, Aliyu MM, Chelvanathan P, Razykov T, Sopian K et al. Effect of annealing on the properties of Zn xCd 1-xS thin film growth by RF magnetron co-sputtering In Energy Procedia. Vol. 33. Elsevier BV. 2013. p. 214-222 https://doi.org/10.1016/j.egypro.2013.05.060
Hossain, M. S. ; Islam, M. A. ; Aliyu, M. M. ; Chelvanathan, P. ; Razykov, T. ; Sopian, Kamaruzzaman ; Amin, Nowshad. / Effect of annealing on the properties of Zn xCd 1-xS thin film growth by RF magnetron co-sputtering Energy Procedia. Vol. 33 Elsevier BV, 2013. pp. 214-222
@inproceedings{cc3aca39a36c4e49a37758dc2fd5d22d,
title = "Effect of annealing on the properties of Zn xCd 1-xS thin film growth by RF magnetron co-sputtering",
abstract = "Zn xCd 1-xS thin films at low zinc content have been deposited on bare soda lime glass substrates using RF magnetron co-sputtering of CdS and ZnS for the first time to investigate annealing effect on the structural and optical properties of the thin films. The as-deposited films were annealed in O 2/N 2 ambient at annealing temperature ranging 200-500 °C. The composition of the films was controlled by varying RF power of CdS and ZnS in such a ratio so that zinc content in the thin films was low. The composition, structural, optical and surface morphological properties of the films was investigated using EDX, XRD, UV-Vis spectrophotometer and FESEM. The annealed films were observed hexagonal wurtzite structure with strong preferential orientation along (002) diffraction peak. Crystallinity of the films increased with increasing annealing temperature below 400°C whereas beyond 400°C new peaks were observed along with decreasing trend of (002) diffraction peak. Optical absorption and transmission spectra were recorded within the range 300-900 nm. With increasing annealing temperature, the band gap of the annealed films once decreased and then abruptly increased at around 400°C. The decreased bandgap may have been due to possible increase in the crystalline nature of the material. From SEM, it was observed that the thin films were formed by different clusters of grains which later changed to isolated grains as the annealing temperature increased. This work confirms that annealing temperature has overbearing influence on the Zn xCd 1-xS thin film properties deposited by RF magnetron co-sputtering.",
keywords = "Annealing, Co-sputtering, Grains, RF power",
author = "Hossain, {M. S.} and Islam, {M. A.} and Aliyu, {M. M.} and P. Chelvanathan and T. Razykov and Kamaruzzaman Sopian and Nowshad Amin",
year = "2013",
doi = "10.1016/j.egypro.2013.05.060",
language = "English",
volume = "33",
pages = "214--222",
booktitle = "Energy Procedia",
publisher = "Elsevier BV",

}

TY - GEN

T1 - Effect of annealing on the properties of Zn xCd 1-xS thin film growth by RF magnetron co-sputtering

AU - Hossain, M. S.

AU - Islam, M. A.

AU - Aliyu, M. M.

AU - Chelvanathan, P.

AU - Razykov, T.

AU - Sopian, Kamaruzzaman

AU - Amin, Nowshad

PY - 2013

Y1 - 2013

N2 - Zn xCd 1-xS thin films at low zinc content have been deposited on bare soda lime glass substrates using RF magnetron co-sputtering of CdS and ZnS for the first time to investigate annealing effect on the structural and optical properties of the thin films. The as-deposited films were annealed in O 2/N 2 ambient at annealing temperature ranging 200-500 °C. The composition of the films was controlled by varying RF power of CdS and ZnS in such a ratio so that zinc content in the thin films was low. The composition, structural, optical and surface morphological properties of the films was investigated using EDX, XRD, UV-Vis spectrophotometer and FESEM. The annealed films were observed hexagonal wurtzite structure with strong preferential orientation along (002) diffraction peak. Crystallinity of the films increased with increasing annealing temperature below 400°C whereas beyond 400°C new peaks were observed along with decreasing trend of (002) diffraction peak. Optical absorption and transmission spectra were recorded within the range 300-900 nm. With increasing annealing temperature, the band gap of the annealed films once decreased and then abruptly increased at around 400°C. The decreased bandgap may have been due to possible increase in the crystalline nature of the material. From SEM, it was observed that the thin films were formed by different clusters of grains which later changed to isolated grains as the annealing temperature increased. This work confirms that annealing temperature has overbearing influence on the Zn xCd 1-xS thin film properties deposited by RF magnetron co-sputtering.

AB - Zn xCd 1-xS thin films at low zinc content have been deposited on bare soda lime glass substrates using RF magnetron co-sputtering of CdS and ZnS for the first time to investigate annealing effect on the structural and optical properties of the thin films. The as-deposited films were annealed in O 2/N 2 ambient at annealing temperature ranging 200-500 °C. The composition of the films was controlled by varying RF power of CdS and ZnS in such a ratio so that zinc content in the thin films was low. The composition, structural, optical and surface morphological properties of the films was investigated using EDX, XRD, UV-Vis spectrophotometer and FESEM. The annealed films were observed hexagonal wurtzite structure with strong preferential orientation along (002) diffraction peak. Crystallinity of the films increased with increasing annealing temperature below 400°C whereas beyond 400°C new peaks were observed along with decreasing trend of (002) diffraction peak. Optical absorption and transmission spectra were recorded within the range 300-900 nm. With increasing annealing temperature, the band gap of the annealed films once decreased and then abruptly increased at around 400°C. The decreased bandgap may have been due to possible increase in the crystalline nature of the material. From SEM, it was observed that the thin films were formed by different clusters of grains which later changed to isolated grains as the annealing temperature increased. This work confirms that annealing temperature has overbearing influence on the Zn xCd 1-xS thin film properties deposited by RF magnetron co-sputtering.

KW - Annealing

KW - Co-sputtering

KW - Grains

KW - RF power

UR - http://www.scopus.com/inward/record.url?scp=84897485557&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84897485557&partnerID=8YFLogxK

U2 - 10.1016/j.egypro.2013.05.060

DO - 10.1016/j.egypro.2013.05.060

M3 - Conference contribution

AN - SCOPUS:84897485557

VL - 33

SP - 214

EP - 222

BT - Energy Procedia

PB - Elsevier BV

ER -