Dye-sensitized solar cell (DSSC) utilizing reduced graphene oxide (RGO) films counter electrode: effect of graphene oxide (GO) content

Mohd Yusri Abd Rahman, A. S. Sulaiman, Ali Umar Akrajas, Muhamad Mat Salleh

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

This paper reports the preliminary work on the DSSC utilizing reduced graphene oxide (RGO) films counter electrode. The effect of graphene oxide (GO) content on the performance of the DSSC has been investigated. The FESEM images show that the sample contains conductive RGO and non-conductive GO. The RGO samples are crystalline with the diffraction peak at 22.5°. It was found that the short-circuit current density (JSC) and power conversion efficiency (η) of the device are significantly affected by the GO content. The DSSC utilizing RGO film counter electrode prepared using 2.5 mg GO performed the highest JSC, Voc and η of 0.77 mA cm−2, 0.613 V and 0.09 %, respectively. The highest performance of the device is due to highest electronic conductivity, the lowest leak current, bulk resistance (Rb), charge transfer resistance (Rct) and longest charge carrier lifetime. The lower leak current, Rb and Rct, the longer carrier lifetime resulted in the higher JSC and η.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalJournal of Materials Science: Materials in Electronics
DOIs
Publication statusAccepted/In press - 19 Sep 2016

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Graphite
Oxides
Graphene
Oxide films
oxide films
graphene
counters
solar cells
dyes
Electrodes
electrodes
oxides
Carrier lifetime
low currents
carrier lifetime
Charge transfer
charge transfer
Dye-sensitized solar cells
short circuit currents
Charge carriers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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title = "Dye-sensitized solar cell (DSSC) utilizing reduced graphene oxide (RGO) films counter electrode: effect of graphene oxide (GO) content",
abstract = "This paper reports the preliminary work on the DSSC utilizing reduced graphene oxide (RGO) films counter electrode. The effect of graphene oxide (GO) content on the performance of the DSSC has been investigated. The FESEM images show that the sample contains conductive RGO and non-conductive GO. The RGO samples are crystalline with the diffraction peak at 22.5°. It was found that the short-circuit current density (JSC) and power conversion efficiency (η) of the device are significantly affected by the GO content. The DSSC utilizing RGO film counter electrode prepared using 2.5 mg GO performed the highest JSC, Voc and η of 0.77 mA cm−2, 0.613 V and 0.09 {\%}, respectively. The highest performance of the device is due to highest electronic conductivity, the lowest leak current, bulk resistance (Rb), charge transfer resistance (Rct) and longest charge carrier lifetime. The lower leak current, Rb and Rct, the longer carrier lifetime resulted in the higher JSC and η.",
author = "{Abd Rahman}, {Mohd Yusri} and Sulaiman, {A. S.} and Akrajas, {Ali Umar} and {Mat Salleh}, Muhamad",
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AU - Abd Rahman, Mohd Yusri

AU - Sulaiman, A. S.

AU - Akrajas, Ali Umar

AU - Mat Salleh, Muhamad

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N2 - This paper reports the preliminary work on the DSSC utilizing reduced graphene oxide (RGO) films counter electrode. The effect of graphene oxide (GO) content on the performance of the DSSC has been investigated. The FESEM images show that the sample contains conductive RGO and non-conductive GO. The RGO samples are crystalline with the diffraction peak at 22.5°. It was found that the short-circuit current density (JSC) and power conversion efficiency (η) of the device are significantly affected by the GO content. The DSSC utilizing RGO film counter electrode prepared using 2.5 mg GO performed the highest JSC, Voc and η of 0.77 mA cm−2, 0.613 V and 0.09 %, respectively. The highest performance of the device is due to highest electronic conductivity, the lowest leak current, bulk resistance (Rb), charge transfer resistance (Rct) and longest charge carrier lifetime. The lower leak current, Rb and Rct, the longer carrier lifetime resulted in the higher JSC and η.

AB - This paper reports the preliminary work on the DSSC utilizing reduced graphene oxide (RGO) films counter electrode. The effect of graphene oxide (GO) content on the performance of the DSSC has been investigated. The FESEM images show that the sample contains conductive RGO and non-conductive GO. The RGO samples are crystalline with the diffraction peak at 22.5°. It was found that the short-circuit current density (JSC) and power conversion efficiency (η) of the device are significantly affected by the GO content. The DSSC utilizing RGO film counter electrode prepared using 2.5 mg GO performed the highest JSC, Voc and η of 0.77 mA cm−2, 0.613 V and 0.09 %, respectively. The highest performance of the device is due to highest electronic conductivity, the lowest leak current, bulk resistance (Rb), charge transfer resistance (Rct) and longest charge carrier lifetime. The lower leak current, Rb and Rct, the longer carrier lifetime resulted in the higher JSC and η.

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