Drain breakdown voltage model of fully-depleted SOI four-gate MOSFETs

Hossein Mohammadi, Huda Abdullah, Chang Fu Dee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The purpose of this research is to evaluate the drain breakdown voltage of n-channel FD-SOI four-gate MOSFETs. Our approach is on the basis of three dimensional solution of Poisson's equation with proper boundary conditions for the surface potential and electrical field distribution. The model is extended to derive a model for the drain breakdown voltage which can predict the drain breakdown voltage versus bias conditions and device parameters including silicon film thickness, oxide layer thickness and channel doping concentration. The validity of the model is illustrated by comparison between the obtained results and numerical simulation.

Original languageEnglish
Title of host publication2016 24th Iranian Conference on Electrical Engineering, ICEE 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1248-1253
Number of pages6
ISBN (Electronic)9781467387897
DOIs
Publication statusPublished - 6 Oct 2016
Event24th Iranian Conference on Electrical Engineering, ICEE 2016 - Shiraz, Iran, Islamic Republic of
Duration: 10 May 201612 May 2016

Other

Other24th Iranian Conference on Electrical Engineering, ICEE 2016
CountryIran, Islamic Republic of
CityShiraz
Period10/5/1612/5/16

Fingerprint

MOSFET
Electric breakdown
Breakdown
Voltage
Surface Potential
Poisson equation
Surface potential
Poisson's equation
Oxides
Film thickness
Silicon
Doping (additives)
Boundary conditions
Model
Predict
Numerical Simulation
Three-dimensional
Evaluate
Computer simulation

Keywords

  • Analytical model
  • Drain Breakdown voltage
  • G4-FET
  • Surface potential
  • Three-dimensional modeling

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Optimization
  • Computer Networks and Communications

Cite this

Mohammadi, H., Abdullah, H., & Dee, C. F. (2016). Drain breakdown voltage model of fully-depleted SOI four-gate MOSFETs. In 2016 24th Iranian Conference on Electrical Engineering, ICEE 2016 (pp. 1248-1253). [7585713] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IranianCEE.2016.7585713

Drain breakdown voltage model of fully-depleted SOI four-gate MOSFETs. / Mohammadi, Hossein; Abdullah, Huda; Dee, Chang Fu.

2016 24th Iranian Conference on Electrical Engineering, ICEE 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 1248-1253 7585713.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mohammadi, H, Abdullah, H & Dee, CF 2016, Drain breakdown voltage model of fully-depleted SOI four-gate MOSFETs. in 2016 24th Iranian Conference on Electrical Engineering, ICEE 2016., 7585713, Institute of Electrical and Electronics Engineers Inc., pp. 1248-1253, 24th Iranian Conference on Electrical Engineering, ICEE 2016, Shiraz, Iran, Islamic Republic of, 10/5/16. https://doi.org/10.1109/IranianCEE.2016.7585713
Mohammadi H, Abdullah H, Dee CF. Drain breakdown voltage model of fully-depleted SOI four-gate MOSFETs. In 2016 24th Iranian Conference on Electrical Engineering, ICEE 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 1248-1253. 7585713 https://doi.org/10.1109/IranianCEE.2016.7585713
Mohammadi, Hossein ; Abdullah, Huda ; Dee, Chang Fu. / Drain breakdown voltage model of fully-depleted SOI four-gate MOSFETs. 2016 24th Iranian Conference on Electrical Engineering, ICEE 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 1248-1253
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