Double-step plasma etching for SiO2 microcantilever release

Rosminazuin Ab Rahim, Badariah Bais, Burhanuddin Yeop Majlis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, an isotropic dry plasma etching was used to release the suspended SiO2 microcantilever from the substrate of SOI wafer. Employing the plasma dry etching technique, the frontside etching for the SiO2 microcantilever release is done using the Oxford Plasmalab System 100. To obtain the optimum condition for the microcantilever release using the plasma etcher, the etching parameters involved are 100 sccm of SF 6 flow, 2000 W of capacitively coupled plasma (CCP) power, 3 W of inductively coupled plasma (ICP) power, 20°C of etching temperature and 30 mTorr chamber pressure. The optimum parameters yield lateral etch rate of about 5 μm/min and vertical etch rate of about 8 μm/min. Two etching methods have been considered in this study. The first method employs only the isotropic etching to realize the microcantilever release while the second method utilizes both the anisotropic etching and the isotropic etching. For the second method, the process starts with the anisotropic etching from the deep reactive ion etching (DRIE) system which is then followed by the isotropic etching to complete the microcantilever releasing process. The purpose of the anisotropic etching is to create an etching window for the subsequent isotropic etching process. By using double-step etching method which combines both isotropic and anisotropic plasma etching for the microcantilever release process, the releasing process of suspended microcantilever is significantly improved.

Original languageEnglish
Title of host publicationAdvanced Materials Research
Pages140-143
Number of pages4
Volume254
DOIs
Publication statusPublished - 2011
EventInternational Conference on Materials for Advanced Technologies, ICMAT2011 - Symposium G: NEMS/MEMS and MicroTAS - Suntec
Duration: 26 Jun 20111 Jul 2011

Publication series

NameAdvanced Materials Research
Volume254
ISSN (Print)10226680

Other

OtherInternational Conference on Materials for Advanced Technologies, ICMAT2011 - Symposium G: NEMS/MEMS and MicroTAS
CitySuntec
Period26/6/111/7/11

Fingerprint

Plasma etching
Etching
Anisotropic etching
Plasmas
Reactive ion etching
Inductively coupled plasma

Keywords

  • MEMS
  • Microcantilever
  • Plasma etching
  • SOI wafer

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Rahim, R. A., Bais, B., & Yeop Majlis, B. (2011). Double-step plasma etching for SiO2 microcantilever release. In Advanced Materials Research (Vol. 254, pp. 140-143). (Advanced Materials Research; Vol. 254). https://doi.org/10.4028/www.scientific.net/AMR.254.140

Double-step plasma etching for SiO2 microcantilever release. / Rahim, Rosminazuin Ab; Bais, Badariah; Yeop Majlis, Burhanuddin.

Advanced Materials Research. Vol. 254 2011. p. 140-143 (Advanced Materials Research; Vol. 254).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Rahim, RA, Bais, B & Yeop Majlis, B 2011, Double-step plasma etching for SiO2 microcantilever release. in Advanced Materials Research. vol. 254, Advanced Materials Research, vol. 254, pp. 140-143, International Conference on Materials for Advanced Technologies, ICMAT2011 - Symposium G: NEMS/MEMS and MicroTAS, Suntec, 26/6/11. https://doi.org/10.4028/www.scientific.net/AMR.254.140
Rahim RA, Bais B, Yeop Majlis B. Double-step plasma etching for SiO2 microcantilever release. In Advanced Materials Research. Vol. 254. 2011. p. 140-143. (Advanced Materials Research). https://doi.org/10.4028/www.scientific.net/AMR.254.140
Rahim, Rosminazuin Ab ; Bais, Badariah ; Yeop Majlis, Burhanuddin. / Double-step plasma etching for SiO2 microcantilever release. Advanced Materials Research. Vol. 254 2011. pp. 140-143 (Advanced Materials Research).
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