Diode pumped 850 nm vertical-cavity surface-emitting laser

M. Othman, J. M. Rorison

Research output: Contribution to journalArticle

Abstract

Very little, if any, has been published on optically pumped 850 nm vertical-cavity surface-emitting lasers (VCSELs), particularly for doped structures. This paper investigates GaAs-based VCSELs which have not been optimized for optical pumping work. Characterisation was carried out for both pulsed and continuous wave (CW). Pulsed operation causes a lower rise in temperature, thus postponing the onset of thermal rollover, and allowing the device to be operated at higher powers. A threshold of ∼160 kW/cm 2, and single mode output with incident power density of up to 225 kW/cm2 were obtained. From the simulation work done, it has been observed that for optically pumped VCSELs, at higher pump density, there was faster turn on and higher output power, and that dilute nitride active material give better output performance compared to GaAs.

Original languageEnglish
Pages (from-to)2016-2020
Number of pages5
JournalOptik
Volume122
Issue number22
DOIs
Publication statusPublished - Nov 2011
Externally publishedYes

Fingerprint

Surface emitting lasers
surface emitting lasers
Diodes
diodes
cavities
output
Optical pumping
optical pumping
Nitrides
continuous radiation
nitrides
radiant flux density
Pumps
pumps
thresholds
causes
simulation
Temperature
temperature
gallium arsenide

Keywords

  • Optical pumping
  • VCSEL

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

Diode pumped 850 nm vertical-cavity surface-emitting laser. / Othman, M.; Rorison, J. M.

In: Optik, Vol. 122, No. 22, 11.2011, p. 2016-2020.

Research output: Contribution to journalArticle

Othman, M. ; Rorison, J. M. / Diode pumped 850 nm vertical-cavity surface-emitting laser. In: Optik. 2011 ; Vol. 122, No. 22. pp. 2016-2020.
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