Digital-Controlled Multimode Multiband Power Amplifier with Multiple Gated Transistor

Veeraiyah Thangasamy, Noor Ain Kamsani, Mohd Nizar Hamidon, Shaiful Jahari Hashim, Zubaida Yusoff, Muhammad Faiz Bukhori

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Multimode multiband (MMMB) connectivity has become a de facto requirement for smartphones in order to accommodate the various different frequencies, bandwidths, output power, and modulation schemes. In this work, a two-stage single-chip MMMB power amplifier (PA) with multiple gated transistor technique has been designed to obtain dual-mode output power options, with its input matching and intermediate matching networks made tunable to enable switching of the PA output between low-band and high-band frequencies. In the low-band region, the PA offers 195 MHz of operating bandwidth starting from the frequency of 770 up to 965 MHz, covering the long term evolution (LTE) bands 5 and 8, with output saturated power of 27.3 dBm and peak power added efficiency (PAE) of 47.4%. In the high-band region, the PA has 900 MHz bandwidth starting from the frequency of 1.3 up to 2.2 GHz, covering the LTE bands 1, 2, and 3, with output saturated power of 27.9 dBm and peak PAE of 45.3%. The achieved ACPRs are −40 and −42 dBc in the low-band and high-band, respectively, which are well within the LTE linearity specifications. By using a low-cost CMOS process, the proposed MMMB PA has potential applications in the system-on-chip (SoC) integration of wireless transceiver.

Original languageEnglish
Pages (from-to)48-57
Number of pages10
JournalIETE Technical Review (Institution of Electronics and Telecommunication Engineers, India)
Volume34
Issue number1
DOIs
Publication statusPublished - 2 Jan 2017

Fingerprint

Power amplifiers
Transistors
Long Term Evolution (LTE)
Bandwidth
Smartphones
Transceivers
Frequency bands
Modulation
Specifications
Costs

Keywords

  • Efficiency
  • LTE
  • Multiband
  • Multimode
  • RF power amplifiers
  • WCDMA

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Digital-Controlled Multimode Multiband Power Amplifier with Multiple Gated Transistor. / Thangasamy, Veeraiyah; Kamsani, Noor Ain; Hamidon, Mohd Nizar; Hashim, Shaiful Jahari; Yusoff, Zubaida; Bukhori, Muhammad Faiz.

In: IETE Technical Review (Institution of Electronics and Telecommunication Engineers, India), Vol. 34, No. 1, 02.01.2017, p. 48-57.

Research output: Contribution to journalArticle

Thangasamy, Veeraiyah ; Kamsani, Noor Ain ; Hamidon, Mohd Nizar ; Hashim, Shaiful Jahari ; Yusoff, Zubaida ; Bukhori, Muhammad Faiz. / Digital-Controlled Multimode Multiband Power Amplifier with Multiple Gated Transistor. In: IETE Technical Review (Institution of Electronics and Telecommunication Engineers, India). 2017 ; Vol. 34, No. 1. pp. 48-57.
@article{fb17302b945c4479a80dac6618dbe0db,
title = "Digital-Controlled Multimode Multiband Power Amplifier with Multiple Gated Transistor",
abstract = "Multimode multiband (MMMB) connectivity has become a de facto requirement for smartphones in order to accommodate the various different frequencies, bandwidths, output power, and modulation schemes. In this work, a two-stage single-chip MMMB power amplifier (PA) with multiple gated transistor technique has been designed to obtain dual-mode output power options, with its input matching and intermediate matching networks made tunable to enable switching of the PA output between low-band and high-band frequencies. In the low-band region, the PA offers 195 MHz of operating bandwidth starting from the frequency of 770 up to 965 MHz, covering the long term evolution (LTE) bands 5 and 8, with output saturated power of 27.3 dBm and peak power added efficiency (PAE) of 47.4{\%}. In the high-band region, the PA has 900 MHz bandwidth starting from the frequency of 1.3 up to 2.2 GHz, covering the LTE bands 1, 2, and 3, with output saturated power of 27.9 dBm and peak PAE of 45.3{\%}. The achieved ACPRs are −40 and −42 dBc in the low-band and high-band, respectively, which are well within the LTE linearity specifications. By using a low-cost CMOS process, the proposed MMMB PA has potential applications in the system-on-chip (SoC) integration of wireless transceiver.",
keywords = "Efficiency, LTE, Multiband, Multimode, RF power amplifiers, WCDMA",
author = "Veeraiyah Thangasamy and Kamsani, {Noor Ain} and Hamidon, {Mohd Nizar} and Hashim, {Shaiful Jahari} and Zubaida Yusoff and Bukhori, {Muhammad Faiz}",
year = "2017",
month = "1",
day = "2",
doi = "10.1080/02564602.2016.1141079",
language = "English",
volume = "34",
pages = "48--57",
journal = "IETE Technical Review (Institution of Electronics and Telecommunication Engineers, India)",
issn = "0256-4602",
publisher = "Medknow Publications and Media Pvt. Ltd",
number = "1",

}

TY - JOUR

T1 - Digital-Controlled Multimode Multiband Power Amplifier with Multiple Gated Transistor

AU - Thangasamy, Veeraiyah

AU - Kamsani, Noor Ain

AU - Hamidon, Mohd Nizar

AU - Hashim, Shaiful Jahari

AU - Yusoff, Zubaida

AU - Bukhori, Muhammad Faiz

PY - 2017/1/2

Y1 - 2017/1/2

N2 - Multimode multiband (MMMB) connectivity has become a de facto requirement for smartphones in order to accommodate the various different frequencies, bandwidths, output power, and modulation schemes. In this work, a two-stage single-chip MMMB power amplifier (PA) with multiple gated transistor technique has been designed to obtain dual-mode output power options, with its input matching and intermediate matching networks made tunable to enable switching of the PA output between low-band and high-band frequencies. In the low-band region, the PA offers 195 MHz of operating bandwidth starting from the frequency of 770 up to 965 MHz, covering the long term evolution (LTE) bands 5 and 8, with output saturated power of 27.3 dBm and peak power added efficiency (PAE) of 47.4%. In the high-band region, the PA has 900 MHz bandwidth starting from the frequency of 1.3 up to 2.2 GHz, covering the LTE bands 1, 2, and 3, with output saturated power of 27.9 dBm and peak PAE of 45.3%. The achieved ACPRs are −40 and −42 dBc in the low-band and high-band, respectively, which are well within the LTE linearity specifications. By using a low-cost CMOS process, the proposed MMMB PA has potential applications in the system-on-chip (SoC) integration of wireless transceiver.

AB - Multimode multiband (MMMB) connectivity has become a de facto requirement for smartphones in order to accommodate the various different frequencies, bandwidths, output power, and modulation schemes. In this work, a two-stage single-chip MMMB power amplifier (PA) with multiple gated transistor technique has been designed to obtain dual-mode output power options, with its input matching and intermediate matching networks made tunable to enable switching of the PA output between low-band and high-band frequencies. In the low-band region, the PA offers 195 MHz of operating bandwidth starting from the frequency of 770 up to 965 MHz, covering the long term evolution (LTE) bands 5 and 8, with output saturated power of 27.3 dBm and peak power added efficiency (PAE) of 47.4%. In the high-band region, the PA has 900 MHz bandwidth starting from the frequency of 1.3 up to 2.2 GHz, covering the LTE bands 1, 2, and 3, with output saturated power of 27.9 dBm and peak PAE of 45.3%. The achieved ACPRs are −40 and −42 dBc in the low-band and high-band, respectively, which are well within the LTE linearity specifications. By using a low-cost CMOS process, the proposed MMMB PA has potential applications in the system-on-chip (SoC) integration of wireless transceiver.

KW - Efficiency

KW - LTE

KW - Multiband

KW - Multimode

KW - RF power amplifiers

KW - WCDMA

UR - http://www.scopus.com/inward/record.url?scp=85026849667&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85026849667&partnerID=8YFLogxK

U2 - 10.1080/02564602.2016.1141079

DO - 10.1080/02564602.2016.1141079

M3 - Article

AN - SCOPUS:85026849667

VL - 34

SP - 48

EP - 57

JO - IETE Technical Review (Institution of Electronics and Telecommunication Engineers, India)

JF - IETE Technical Review (Institution of Electronics and Telecommunication Engineers, India)

SN - 0256-4602

IS - 1

ER -