Device characteristics of carbon nanotube transistor fabricated by direct growth method

Nobuhito Inami, Mohd Ambri Mohamed, Eiji Shikoh, Akihiko Fujiwara

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We have fabricated carbon nanotube (CNT) field-effect transistors (FETs) by direct growth of single-wall CNTs between the source and drain electrodes, and investigated their device characteristics. The FETs show ambipolar operation. The temperature and bias voltage dependence of device characteristics are consistent with device operation of the Schottky-type FET. The carrier injection barrier heights for both the electron and hole carriers show small values of 17-74 meV, without any additional specific treatment after device fabrication.

Original languageEnglish
Article number243115
JournalApplied Physics Letters
Volume92
Issue number24
DOIs
Publication statusPublished - 2008
Externally publishedYes

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transistors
carbon nanotubes
field effect transistors
carrier injection
fabrication
electrodes
electric potential
electrons
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Device characteristics of carbon nanotube transistor fabricated by direct growth method. / Inami, Nobuhito; Mohamed, Mohd Ambri; Shikoh, Eiji; Fujiwara, Akihiko.

In: Applied Physics Letters, Vol. 92, No. 24, 243115, 2008.

Research output: Contribution to journalArticle

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