Development of rie-textured silicon solar cells

B. M. Damiani, R. Lüdemann, D. S. Ruby, Saleem H. Zaidi, A. Rohatgi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

17 Citations (Scopus)

Abstract

A maskless plasma texturing technique using Reactive Ion Etching for silicon solar cells results in a very low reflectance of 5.4 % before, and 3.9 % after SiN deposition. A detailed study of surface recombination and emitter properties was made, then solar cells were fabricated using the DOSS solar cell process. Different plasma-damage removal treatments are tested to optimize low lifetime solar cell efficiencies. Highest efficiencies are observed for little or no plasma-damage removal etching on mc-Si. Increased Jsc due to the RIE texture proved superior to a single layer anti-reflection coating. This indicates that RIE texturing is a promising texturing technique, especially applicable on lower lifetime (multicrystalline) silicon. The use of non-toxic, non-corrosive SF6 makes this process attractive for mass production.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages371-374
Number of pages4
Volume2000-January
ISBN (Print)0780357728
DOIs
Publication statusPublished - 2000
Externally publishedYes
Event28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States
Duration: 15 Sep 200022 Sep 2000

Other

Other28th IEEE Photovoltaic Specialists Conference, PVSC 2000
CountryUnited States
CityAnchorage
Period15/9/0022/9/00

Fingerprint

Texturing
Silicon solar cells
Reactive ion etching
Solar cells
Plasmas
Antireflection coatings
Etching
Textures
Silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Damiani, B. M., Lüdemann, R., Ruby, D. S., Zaidi, S. H., & Rohatgi, A. (2000). Development of rie-textured silicon solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference (Vol. 2000-January, pp. 371-374). [915843] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2000.915843

Development of rie-textured silicon solar cells. / Damiani, B. M.; Lüdemann, R.; Ruby, D. S.; Zaidi, Saleem H.; Rohatgi, A.

Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 2000-January Institute of Electrical and Electronics Engineers Inc., 2000. p. 371-374 915843.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Damiani, BM, Lüdemann, R, Ruby, DS, Zaidi, SH & Rohatgi, A 2000, Development of rie-textured silicon solar cells. in Conference Record of the IEEE Photovoltaic Specialists Conference. vol. 2000-January, 915843, Institute of Electrical and Electronics Engineers Inc., pp. 371-374, 28th IEEE Photovoltaic Specialists Conference, PVSC 2000, Anchorage, United States, 15/9/00. https://doi.org/10.1109/PVSC.2000.915843
Damiani BM, Lüdemann R, Ruby DS, Zaidi SH, Rohatgi A. Development of rie-textured silicon solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 2000-January. Institute of Electrical and Electronics Engineers Inc. 2000. p. 371-374. 915843 https://doi.org/10.1109/PVSC.2000.915843
Damiani, B. M. ; Lüdemann, R. ; Ruby, D. S. ; Zaidi, Saleem H. ; Rohatgi, A. / Development of rie-textured silicon solar cells. Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 2000-January Institute of Electrical and Electronics Engineers Inc., 2000. pp. 371-374
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