Development of process parameters for 22 nm PMOS using 2-D analytical modeling

A. H Afifah Maheran, P. Susthitha Menon N V Visvanathan, I. Ahmad, S. Shaari, Z. A Noor Faizah

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The complementary metal-oxide-semiconductor field effect transistor (CMOSFET) has become major challenge to scaling and integration. Innovation in transistor structures and integration of novel materials are necessary to sustain this performance trend. CMOS variability in the scaling technology becoming very important concern due to limitation of process control; over statistically variability related to the fundamental discreteness and materials. Minimizing the transistor variation through technology optimization and ensuring robust product functionality and performance is the major issue.In this article, the continuation study on process parameters variations is extended and delivered thoroughly in order to achieve a minimum leakage current (ILEAK) on PMOS planar transistor at 22 nm gate length. Several device parameters are varies significantly using Taguchi method to predict the optimum combination of process parameters fabrication. A combination of high permittivity material (high-k) and metal gate are utilized accordingly as gate structure where the materials include titanium dioxide (TiO2) and tungsten silicide (WSix). Then the L9 of the Taguchi Orthogonal array is used to analyze the device simulation where the results of signal-to-noise ratio (SNR) of Smaller-the-Better (STB) scheme are studied through the percentage influences of the process parameters. This is to achieve a minimum ILEAK where the maximum predicted ILEAK value by International Technology Roadmap for Semiconductors (ITRS) 2011 is said to should not above 100 nA/μm. Final results shows that the compensation implantation dose acts as the dominant factor with 68.49% contribution in lowering the device's leakage current. The absolute process parameters combination results in ILEAK mean value of 3.96821 nA/μm where is far lower than the predicted value.

Original languageEnglish
Title of host publicationNational Physics Conference 2014, PERFIK 2014
PublisherAmerican Institute of Physics Inc.
Volume1657
ISBN (Electronic)9780735412996
DOIs
Publication statusPublished - 24 Apr 2015
EventNational Physics Conference 2014, PERFIK 2014 - Kuala Lumpur, Malaysia
Duration: 18 Nov 201419 Nov 2014

Other

OtherNational Physics Conference 2014, PERFIK 2014
CountryMalaysia
CityKuala Lumpur
Period18/11/1419/11/14

Fingerprint

transistors
CMOS
leakage
Taguchi methods
scaling
titanium oxides
implantation
tungsten
signal to noise ratios
field effect transistors
permittivity
trends
dosage
fabrication
optimization
products
metals
simulation

Keywords

  • 22 nm PMOS
  • high-k/metal gate
  • minimum leakage current
  • Taguchi Method

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Maheran, A. H. A., N V Visvanathan, P. S. M., Ahmad, I., Shaari, S., & Faizah, Z. A. N. (2015). Development of process parameters for 22 nm PMOS using 2-D analytical modeling. In National Physics Conference 2014, PERFIK 2014 (Vol. 1657). [030007] American Institute of Physics Inc.. https://doi.org/10.1063/1.4915157

Development of process parameters for 22 nm PMOS using 2-D analytical modeling. / Maheran, A. H Afifah; N V Visvanathan, P. Susthitha Menon; Ahmad, I.; Shaari, S.; Faizah, Z. A Noor.

National Physics Conference 2014, PERFIK 2014. Vol. 1657 American Institute of Physics Inc., 2015. 030007.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Maheran, AHA, N V Visvanathan, PSM, Ahmad, I, Shaari, S & Faizah, ZAN 2015, Development of process parameters for 22 nm PMOS using 2-D analytical modeling. in National Physics Conference 2014, PERFIK 2014. vol. 1657, 030007, American Institute of Physics Inc., National Physics Conference 2014, PERFIK 2014, Kuala Lumpur, Malaysia, 18/11/14. https://doi.org/10.1063/1.4915157
Maheran AHA, N V Visvanathan PSM, Ahmad I, Shaari S, Faizah ZAN. Development of process parameters for 22 nm PMOS using 2-D analytical modeling. In National Physics Conference 2014, PERFIK 2014. Vol. 1657. American Institute of Physics Inc. 2015. 030007 https://doi.org/10.1063/1.4915157
Maheran, A. H Afifah ; N V Visvanathan, P. Susthitha Menon ; Ahmad, I. ; Shaari, S. ; Faizah, Z. A Noor. / Development of process parameters for 22 nm PMOS using 2-D analytical modeling. National Physics Conference 2014, PERFIK 2014. Vol. 1657 American Institute of Physics Inc., 2015.
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