Development of perfect silicon corrugated diaphragm using anisotropic etching

Norhayati Soin, Burhanuddin Yeop Majlis

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

This paper presents a design method that provides a better approximation for design parameter values of a silicon corrugated diaphragm for MEMS devices. This proposed method has been developed in order to realize the perfect corrugated diaphragm by using anisotropic etching technique. Due to restriction of the undercutting process, the wet anisotropic approach offers only limited patterns of silicon corrugated diaphragm. Therefore a simulation program of a three-dimensional anisotropic etching profile is used to design the compensation mask-layout in order to avoid the convex corner undercutting phenomenon. It is found that the formation of the silicon corrugated diaphragms predicted by the proposed technique agrees well with the experimental observation.

Original languageEnglish
Pages (from-to)1438-1441
Number of pages4
JournalMicroelectronic Engineering
Volume83
Issue number4-9 SPEC. ISS.
DOIs
Publication statusPublished - Apr 2006

Fingerprint

Anisotropic etching
diaphragms
Silicon
Diaphragms
etching
silicon
layouts
microelectromechanical systems
MEMS
Masks
constrictions
masks
profiles
approximation
simulation

Keywords

  • Anisotropic etching
  • Compensation mask-layout
  • Convex corner
  • Corrugated diaphragm
  • Design parameter

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

Development of perfect silicon corrugated diaphragm using anisotropic etching. / Soin, Norhayati; Yeop Majlis, Burhanuddin.

In: Microelectronic Engineering, Vol. 83, No. 4-9 SPEC. ISS., 04.2006, p. 1438-1441.

Research output: Contribution to journalArticle

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