Development of a silicon carbide MEMS capacitive pressure sensor operating at 500 °c

Noraini Marsi, Burhanuddin Yeop Majlis, Azrul Azlan Hamzah, Ummikalsom Abidin, Faisal Mohd-Yasin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, we present development of MEMS capacitive pressure sensor based silicon carbide (3C-SiC) materials. The sensor is made up of four elements: a 3C-SiC diaphragm, silicon substrate, a reliable stainless steel (SS) o-ring and (SS) vacuum clamper as the package. The designed are inherent simplicity and ruggedness of this physical configuration that acceptably performed for extreme environment applications such as in gas turbine engine. This study reported a reliability testing of a prototype package MEMS capacitive pressure sensor verified up to 500 °C through high temperature lab testing. At 500 °C, the reliability test results show that the sensitivity of 0.826 pF/MPa is achieved. Experimentally, sensor nonlinearity of 0.61 % is found with hysteresis of 3.13 %. The maximum temperature coefficient of output change is 0.073 %/°C measured at 5 MPa.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages52-55
Number of pages4
ISBN (Print)9781479957606
DOIs
Publication statusPublished - 10 Oct 2014
Event11th IEEE International Conference on Semiconductor Electronics, ICSE 2014 - Kuala Lumpur
Duration: 27 Aug 201429 Aug 2014

Other

Other11th IEEE International Conference on Semiconductor Electronics, ICSE 2014
CityKuala Lumpur
Period27/8/1429/8/14

Fingerprint

Capacitive sensors
Stainless Steel
Pressure sensors
Silicon carbide
MEMS
Stainless steel
Control nonlinearities
Sensors
Testing
Silicon
Diaphragms
Gas turbines
Hysteresis
Turbines
Vacuum
Temperature
Substrates
silicon carbide

Keywords

  • hysteresis
  • MEMS
  • pressure sensor
  • sensitivity
  • silicon carbide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Marsi, N., Yeop Majlis, B., Hamzah, A. A., Abidin, U., & Mohd-Yasin, F. (2014). Development of a silicon carbide MEMS capacitive pressure sensor operating at 500 °c. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 52-55). [6920793] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMELEC.2014.6920793

Development of a silicon carbide MEMS capacitive pressure sensor operating at 500 °c. / Marsi, Noraini; Yeop Majlis, Burhanuddin; Hamzah, Azrul Azlan; Abidin, Ummikalsom; Mohd-Yasin, Faisal.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc., 2014. p. 52-55 6920793.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Marsi, N, Yeop Majlis, B, Hamzah, AA, Abidin, U & Mohd-Yasin, F 2014, Development of a silicon carbide MEMS capacitive pressure sensor operating at 500 °c. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 6920793, Institute of Electrical and Electronics Engineers Inc., pp. 52-55, 11th IEEE International Conference on Semiconductor Electronics, ICSE 2014, Kuala Lumpur, 27/8/14. https://doi.org/10.1109/SMELEC.2014.6920793
Marsi N, Yeop Majlis B, Hamzah AA, Abidin U, Mohd-Yasin F. Development of a silicon carbide MEMS capacitive pressure sensor operating at 500 °c. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc. 2014. p. 52-55. 6920793 https://doi.org/10.1109/SMELEC.2014.6920793
Marsi, Noraini ; Yeop Majlis, Burhanuddin ; Hamzah, Azrul Azlan ; Abidin, Ummikalsom ; Mohd-Yasin, Faisal. / Development of a silicon carbide MEMS capacitive pressure sensor operating at 500 °c. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 52-55
@inproceedings{af7530cc252a43f8a111d728fc395376,
title = "Development of a silicon carbide MEMS capacitive pressure sensor operating at 500 °c",
abstract = "In this paper, we present development of MEMS capacitive pressure sensor based silicon carbide (3C-SiC) materials. The sensor is made up of four elements: a 3C-SiC diaphragm, silicon substrate, a reliable stainless steel (SS) o-ring and (SS) vacuum clamper as the package. The designed are inherent simplicity and ruggedness of this physical configuration that acceptably performed for extreme environment applications such as in gas turbine engine. This study reported a reliability testing of a prototype package MEMS capacitive pressure sensor verified up to 500 °C through high temperature lab testing. At 500 °C, the reliability test results show that the sensitivity of 0.826 pF/MPa is achieved. Experimentally, sensor nonlinearity of 0.61 {\%} is found with hysteresis of 3.13 {\%}. The maximum temperature coefficient of output change is 0.073 {\%}/°C measured at 5 MPa.",
keywords = "hysteresis, MEMS, pressure sensor, sensitivity, silicon carbide",
author = "Noraini Marsi and {Yeop Majlis}, Burhanuddin and Hamzah, {Azrul Azlan} and Ummikalsom Abidin and Faisal Mohd-Yasin",
year = "2014",
month = "10",
day = "10",
doi = "10.1109/SMELEC.2014.6920793",
language = "English",
isbn = "9781479957606",
pages = "52--55",
booktitle = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Development of a silicon carbide MEMS capacitive pressure sensor operating at 500 °c

AU - Marsi, Noraini

AU - Yeop Majlis, Burhanuddin

AU - Hamzah, Azrul Azlan

AU - Abidin, Ummikalsom

AU - Mohd-Yasin, Faisal

PY - 2014/10/10

Y1 - 2014/10/10

N2 - In this paper, we present development of MEMS capacitive pressure sensor based silicon carbide (3C-SiC) materials. The sensor is made up of four elements: a 3C-SiC diaphragm, silicon substrate, a reliable stainless steel (SS) o-ring and (SS) vacuum clamper as the package. The designed are inherent simplicity and ruggedness of this physical configuration that acceptably performed for extreme environment applications such as in gas turbine engine. This study reported a reliability testing of a prototype package MEMS capacitive pressure sensor verified up to 500 °C through high temperature lab testing. At 500 °C, the reliability test results show that the sensitivity of 0.826 pF/MPa is achieved. Experimentally, sensor nonlinearity of 0.61 % is found with hysteresis of 3.13 %. The maximum temperature coefficient of output change is 0.073 %/°C measured at 5 MPa.

AB - In this paper, we present development of MEMS capacitive pressure sensor based silicon carbide (3C-SiC) materials. The sensor is made up of four elements: a 3C-SiC diaphragm, silicon substrate, a reliable stainless steel (SS) o-ring and (SS) vacuum clamper as the package. The designed are inherent simplicity and ruggedness of this physical configuration that acceptably performed for extreme environment applications such as in gas turbine engine. This study reported a reliability testing of a prototype package MEMS capacitive pressure sensor verified up to 500 °C through high temperature lab testing. At 500 °C, the reliability test results show that the sensitivity of 0.826 pF/MPa is achieved. Experimentally, sensor nonlinearity of 0.61 % is found with hysteresis of 3.13 %. The maximum temperature coefficient of output change is 0.073 %/°C measured at 5 MPa.

KW - hysteresis

KW - MEMS

KW - pressure sensor

KW - sensitivity

KW - silicon carbide

UR - http://www.scopus.com/inward/record.url?scp=84908222570&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84908222570&partnerID=8YFLogxK

U2 - 10.1109/SMELEC.2014.6920793

DO - 10.1109/SMELEC.2014.6920793

M3 - Conference contribution

SN - 9781479957606

SP - 52

EP - 55

BT - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

PB - Institute of Electrical and Electronics Engineers Inc.

ER -