Design of sense amplifier for non-volatile memory

Labonnah F. Rahman, Md. Mamun Ibne Reaz, Chang Tae Gyu, Mohd Marufuzzaman

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Design of Sense Amplifier (SA) for non-volatile memory (NVM) in Radio Frequency Identification (RFID) tag is illustrated in this research. SA is one of the significant module in NVM like electrically erasable programmable read only memory (EEPROM). In low power applications, memory access time, power dissipation and the reliability influenced the performance of the SA to store data in RFID transponder EEPROM. Among the current or voltage type SA, first one dissipates higher power than the second one, which is usually avoidable for low voltage applications. The proposed design of SA is able to operate under a very low VDD, which is implemented with CEDEC 0.18μm CMOS process within the temperature range from -25°C to 125°C. Moreover, the proposed SA required less power with better performances than other research works.

Original languageEnglish
Pages (from-to)173-182
Number of pages10
JournalRevue Roumaine des Sciences Techniques Serie Electrotechnique et Energetique
Volume58
Issue number2
Publication statusPublished - Apr 2013

Fingerprint

PROM
Radio frequency identification (RFID)
Data storage equipment
Transponders
Electric potential
Energy dissipation
Temperature

Keywords

  • Electrically erasable read only memory (EEPROM)
  • Low power
  • Radio frequency identification (RFID)
  • Sense amplifler
  • Tag

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Energy(all)

Cite this

Design of sense amplifier for non-volatile memory. / Rahman, Labonnah F.; Ibne Reaz, Md. Mamun; Gyu, Chang Tae; Marufuzzaman, Mohd.

In: Revue Roumaine des Sciences Techniques Serie Electrotechnique et Energetique, Vol. 58, No. 2, 04.2013, p. 173-182.

Research output: Contribution to journalArticle

Rahman, Labonnah F. ; Ibne Reaz, Md. Mamun ; Gyu, Chang Tae ; Marufuzzaman, Mohd. / Design of sense amplifier for non-volatile memory. In: Revue Roumaine des Sciences Techniques Serie Electrotechnique et Energetique. 2013 ; Vol. 58, No. 2. pp. 173-182.
@article{eb6dec4543c342d08b709092c6d62d59,
title = "Design of sense amplifier for non-volatile memory",
abstract = "Design of Sense Amplifier (SA) for non-volatile memory (NVM) in Radio Frequency Identification (RFID) tag is illustrated in this research. SA is one of the significant module in NVM like electrically erasable programmable read only memory (EEPROM). In low power applications, memory access time, power dissipation and the reliability influenced the performance of the SA to store data in RFID transponder EEPROM. Among the current or voltage type SA, first one dissipates higher power than the second one, which is usually avoidable for low voltage applications. The proposed design of SA is able to operate under a very low VDD, which is implemented with CEDEC 0.18μm CMOS process within the temperature range from -25°C to 125°C. Moreover, the proposed SA required less power with better performances than other research works.",
keywords = "Electrically erasable read only memory (EEPROM), Low power, Radio frequency identification (RFID), Sense amplifler, Tag",
author = "Rahman, {Labonnah F.} and {Ibne Reaz}, {Md. Mamun} and Gyu, {Chang Tae} and Mohd Marufuzzaman",
year = "2013",
month = "4",
language = "English",
volume = "58",
pages = "173--182",
journal = "Rev Roumaine des Sciences Techniques-Series Electrotechnique et Energetique",
issn = "0035-4066",
publisher = "Editions de l'Academie Republique Populaire",
number = "2",

}

TY - JOUR

T1 - Design of sense amplifier for non-volatile memory

AU - Rahman, Labonnah F.

AU - Ibne Reaz, Md. Mamun

AU - Gyu, Chang Tae

AU - Marufuzzaman, Mohd

PY - 2013/4

Y1 - 2013/4

N2 - Design of Sense Amplifier (SA) for non-volatile memory (NVM) in Radio Frequency Identification (RFID) tag is illustrated in this research. SA is one of the significant module in NVM like electrically erasable programmable read only memory (EEPROM). In low power applications, memory access time, power dissipation and the reliability influenced the performance of the SA to store data in RFID transponder EEPROM. Among the current or voltage type SA, first one dissipates higher power than the second one, which is usually avoidable for low voltage applications. The proposed design of SA is able to operate under a very low VDD, which is implemented with CEDEC 0.18μm CMOS process within the temperature range from -25°C to 125°C. Moreover, the proposed SA required less power with better performances than other research works.

AB - Design of Sense Amplifier (SA) for non-volatile memory (NVM) in Radio Frequency Identification (RFID) tag is illustrated in this research. SA is one of the significant module in NVM like electrically erasable programmable read only memory (EEPROM). In low power applications, memory access time, power dissipation and the reliability influenced the performance of the SA to store data in RFID transponder EEPROM. Among the current or voltage type SA, first one dissipates higher power than the second one, which is usually avoidable for low voltage applications. The proposed design of SA is able to operate under a very low VDD, which is implemented with CEDEC 0.18μm CMOS process within the temperature range from -25°C to 125°C. Moreover, the proposed SA required less power with better performances than other research works.

KW - Electrically erasable read only memory (EEPROM)

KW - Low power

KW - Radio frequency identification (RFID)

KW - Sense amplifler

KW - Tag

UR - http://www.scopus.com/inward/record.url?scp=84878887865&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84878887865&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:84878887865

VL - 58

SP - 173

EP - 182

JO - Rev Roumaine des Sciences Techniques-Series Electrotechnique et Energetique

JF - Rev Roumaine des Sciences Techniques-Series Electrotechnique et Energetique

SN - 0035-4066

IS - 2

ER -