Design of CMOS power amplifier for millimeter wave systems at 70 GHz

Rashid A. Saeed, Raed A. Alsaqour, Ubaid Imtiaz, Wan Mohamad, Rania A. Mokhtar

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this paper, a new CMOS power amplifier that can operate at 70GHz is designed and developed. The advantages of using 70 GHz at millimeter wave (mmW) band is the huge amount of bandwidth available forvarious purposes whether they are in the cellular industry or manufacture devices such as high bandwidth wireless LAN and low attenuation of bandwidth frequencies around 70 GHz bands comparing with 60 GHz. Design power amplifiers at 70 GHz are quite challenges task. The complication such as the stability of the amplifier is difficult and hard to be achieved. In this paper, we design power amplifier with 3 singleended, common source stages biased in class A. The proposed circuitresulted in a stable power amplifier capable of working at 70 GHz frequency. The purpose of using three stages is not only to maximize gain but also to increase isolation against reflections. We found thatthisconfiguration has many advantages in terms of lower power supplyrequired, leading to higher efficiency and good linearity. The first stageis biased at a peak Fmax biased of 0.2 mA/μm to maximize the gain to 10.58 dB. The second and third stages are biased at optimum linearitycurrent density of 0.28 mA/μm.

Original languageEnglish
Pages (from-to)498-503
Number of pages6
JournalInternational Journal of Engineering and Technology
Volume5
Issue number1
Publication statusPublished - 2013

Fingerprint

Power amplifiers
Millimeter waves
Bandwidth
Local area networks
Industry

Keywords

  • CMOS
  • mmW
  • Power amplifier
  • Radio frequency

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Saeed, R. A., Alsaqour, R. A., Imtiaz, U., Mohamad, W., & Mokhtar, R. A. (2013). Design of CMOS power amplifier for millimeter wave systems at 70 GHz. International Journal of Engineering and Technology, 5(1), 498-503.

Design of CMOS power amplifier for millimeter wave systems at 70 GHz. / Saeed, Rashid A.; Alsaqour, Raed A.; Imtiaz, Ubaid; Mohamad, Wan; Mokhtar, Rania A.

In: International Journal of Engineering and Technology, Vol. 5, No. 1, 2013, p. 498-503.

Research output: Contribution to journalArticle

Saeed, RA, Alsaqour, RA, Imtiaz, U, Mohamad, W & Mokhtar, RA 2013, 'Design of CMOS power amplifier for millimeter wave systems at 70 GHz', International Journal of Engineering and Technology, vol. 5, no. 1, pp. 498-503.
Saeed, Rashid A. ; Alsaqour, Raed A. ; Imtiaz, Ubaid ; Mohamad, Wan ; Mokhtar, Rania A. / Design of CMOS power amplifier for millimeter wave systems at 70 GHz. In: International Journal of Engineering and Technology. 2013 ; Vol. 5, No. 1. pp. 498-503.
@article{c6bdd8762f5849cfa3acb32545c44de9,
title = "Design of CMOS power amplifier for millimeter wave systems at 70 GHz",
abstract = "In this paper, a new CMOS power amplifier that can operate at 70GHz is designed and developed. The advantages of using 70 GHz at millimeter wave (mmW) band is the huge amount of bandwidth available forvarious purposes whether they are in the cellular industry or manufacture devices such as high bandwidth wireless LAN and low attenuation of bandwidth frequencies around 70 GHz bands comparing with 60 GHz. Design power amplifiers at 70 GHz are quite challenges task. The complication such as the stability of the amplifier is difficult and hard to be achieved. In this paper, we design power amplifier with 3 singleended, common source stages biased in class A. The proposed circuitresulted in a stable power amplifier capable of working at 70 GHz frequency. The purpose of using three stages is not only to maximize gain but also to increase isolation against reflections. We found thatthisconfiguration has many advantages in terms of lower power supplyrequired, leading to higher efficiency and good linearity. The first stageis biased at a peak Fmax biased of 0.2 mA/μm to maximize the gain to 10.58 dB. The second and third stages are biased at optimum linearitycurrent density of 0.28 mA/μm.",
keywords = "CMOS, mmW, Power amplifier, Radio frequency",
author = "Saeed, {Rashid A.} and Alsaqour, {Raed A.} and Ubaid Imtiaz and Wan Mohamad and Mokhtar, {Rania A.}",
year = "2013",
language = "English",
volume = "5",
pages = "498--503",
journal = "International Journal of Engineering and Technology",
issn = "0975-4024",
publisher = "Engg Journals Publications",
number = "1",

}

TY - JOUR

T1 - Design of CMOS power amplifier for millimeter wave systems at 70 GHz

AU - Saeed, Rashid A.

AU - Alsaqour, Raed A.

AU - Imtiaz, Ubaid

AU - Mohamad, Wan

AU - Mokhtar, Rania A.

PY - 2013

Y1 - 2013

N2 - In this paper, a new CMOS power amplifier that can operate at 70GHz is designed and developed. The advantages of using 70 GHz at millimeter wave (mmW) band is the huge amount of bandwidth available forvarious purposes whether they are in the cellular industry or manufacture devices such as high bandwidth wireless LAN and low attenuation of bandwidth frequencies around 70 GHz bands comparing with 60 GHz. Design power amplifiers at 70 GHz are quite challenges task. The complication such as the stability of the amplifier is difficult and hard to be achieved. In this paper, we design power amplifier with 3 singleended, common source stages biased in class A. The proposed circuitresulted in a stable power amplifier capable of working at 70 GHz frequency. The purpose of using three stages is not only to maximize gain but also to increase isolation against reflections. We found thatthisconfiguration has many advantages in terms of lower power supplyrequired, leading to higher efficiency and good linearity. The first stageis biased at a peak Fmax biased of 0.2 mA/μm to maximize the gain to 10.58 dB. The second and third stages are biased at optimum linearitycurrent density of 0.28 mA/μm.

AB - In this paper, a new CMOS power amplifier that can operate at 70GHz is designed and developed. The advantages of using 70 GHz at millimeter wave (mmW) band is the huge amount of bandwidth available forvarious purposes whether they are in the cellular industry or manufacture devices such as high bandwidth wireless LAN and low attenuation of bandwidth frequencies around 70 GHz bands comparing with 60 GHz. Design power amplifiers at 70 GHz are quite challenges task. The complication such as the stability of the amplifier is difficult and hard to be achieved. In this paper, we design power amplifier with 3 singleended, common source stages biased in class A. The proposed circuitresulted in a stable power amplifier capable of working at 70 GHz frequency. The purpose of using three stages is not only to maximize gain but also to increase isolation against reflections. We found thatthisconfiguration has many advantages in terms of lower power supplyrequired, leading to higher efficiency and good linearity. The first stageis biased at a peak Fmax biased of 0.2 mA/μm to maximize the gain to 10.58 dB. The second and third stages are biased at optimum linearitycurrent density of 0.28 mA/μm.

KW - CMOS

KW - mmW

KW - Power amplifier

KW - Radio frequency

UR - http://www.scopus.com/inward/record.url?scp=84875350466&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84875350466&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:84875350466

VL - 5

SP - 498

EP - 503

JO - International Journal of Engineering and Technology

JF - International Journal of Engineering and Technology

SN - 0975-4024

IS - 1

ER -