Design of an active inductor-based T/R switch in 0.13 μm CMOS technology for 2.4 GHz RF transceivers

Mohammad Arif Sobhan Bhuiyan, Md. Mamun Ibne Reaz, Md Torikul Islam Badal, Md Abdul Mukit, Noorfazila Kamal

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A high-performance transmit/receive (T/R) switch is essential for every radio-frequency (RF) device. This paper proposes a T/R switch that is designed in the CEDEC 0.13 μm complementary metal-oxide-semiconductor (CMOS) technology for 2.4 GHz ISM-band RF applications. The switch exhibits a 1 dB insertion loss, a 28.6 dB isolation, and a 35.8 dBm power-handling capacity in the transmit mode; meanwhile, for the 1.8 V/0 V control voltages, a 1.1 dB insertion loss and a 19.4 dB isolation were exhibited with an extremely-low power dissipation of 377.14 μW in the receive mode. Besides, the variations of the insertion loss and the isolation of the switch for a temperature change from - 25℃ to 125℃ are 0.019 dB and 0.095 dB, respectively. To obtain a lucrative performance, an active inductor-based resonant circuit, body floating, a transistor W/L optimization, and an isolated CMOS structure were adopted for the switch design. Further, due to the avoidance of bulky inductors and capacitors, a very small chip size of 0.0207 mm2 that is the lowest-ever reported chip area for this frequency band was achieved.

Original languageEnglish
Pages (from-to)261-269
Number of pages9
JournalTransactions on Electrical and Electronic Materials
Volume17
Issue number5
DOIs
Publication statusPublished - 1 Oct 2016

Fingerprint

Transceivers
Metals
Switches
Insertion losses
Resonant circuits
Voltage control
Frequency bands
Energy dissipation
Transistors
Capacitors
Oxide semiconductors
Temperature

Keywords

  • CMOS
  • ISM band
  • SPDT
  • T/R switch
  • Transceiver

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Design of an active inductor-based T/R switch in 0.13 μm CMOS technology for 2.4 GHz RF transceivers. / Bhuiyan, Mohammad Arif Sobhan; Ibne Reaz, Md. Mamun; Badal, Md Torikul Islam; Mukit, Md Abdul; Kamal, Noorfazila.

In: Transactions on Electrical and Electronic Materials, Vol. 17, No. 5, 01.10.2016, p. 261-269.

Research output: Contribution to journalArticle

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