Design of an active inductor based LNA in Silterra 130 nm CMOS process technology

Mohammad Arif Sobhan Bhuiyan, Jia Xien Chew, Md. Mamun Ibne Reaz, Noorfazila Kamal

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

In this paper, an active inductor based CMOS low noise amplifier (LNA) has been illustrated for 2.4 GHz ISM band RF receivers. The proposed LNA has three stages: the common gate amplifier, the active inductor and the output buffer. The LNA is designed in Silterra 130-nm CMOS process. It operates at 1.2V supply voltage and exhibit a high gain (S21) of 33dB and reverse isolation (S12) of -33.1dB. The power dissipation of the LNA is only 1.51mW with 8.51 dB noise figure and 35.5dB IIP3. In the proposed LNA, active inductor circuit replaces the usual passive spiral inductor to keep the size of the chip area at 0.0004mm2. Such an LNA will be a better choice for high performance, fully integrated, low cost and low power RF receivers.

Original languageEnglish
Pages (from-to)188-194
Number of pages7
JournalInformacije MIDEM
Volume45
Issue number3
Publication statusPublished - 1 Sep 2015

Fingerprint

Low noise amplifiers
Noise figure
Energy dissipation
Buffers
Networks (circuits)
Electric potential
Costs

Keywords

  • Active inductor
  • CMOS
  • LNA
  • RF

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Design of an active inductor based LNA in Silterra 130 nm CMOS process technology. / Bhuiyan, Mohammad Arif Sobhan; Chew, Jia Xien; Ibne Reaz, Md. Mamun; Kamal, Noorfazila.

In: Informacije MIDEM, Vol. 45, No. 3, 01.09.2015, p. 188-194.

Research output: Contribution to journalArticle

@article{afc5a042747a4cb699f25321b8aecfea,
title = "Design of an active inductor based LNA in Silterra 130 nm CMOS process technology",
abstract = "In this paper, an active inductor based CMOS low noise amplifier (LNA) has been illustrated for 2.4 GHz ISM band RF receivers. The proposed LNA has three stages: the common gate amplifier, the active inductor and the output buffer. The LNA is designed in Silterra 130-nm CMOS process. It operates at 1.2V supply voltage and exhibit a high gain (S21) of 33dB and reverse isolation (S12) of -33.1dB. The power dissipation of the LNA is only 1.51mW with 8.51 dB noise figure and 35.5dB IIP3. In the proposed LNA, active inductor circuit replaces the usual passive spiral inductor to keep the size of the chip area at 0.0004mm2. Such an LNA will be a better choice for high performance, fully integrated, low cost and low power RF receivers.",
keywords = "Active inductor, CMOS, LNA, RF",
author = "Bhuiyan, {Mohammad Arif Sobhan} and Chew, {Jia Xien} and {Ibne Reaz}, {Md. Mamun} and Noorfazila Kamal",
year = "2015",
month = "9",
day = "1",
language = "English",
volume = "45",
pages = "188--194",
journal = "Informacije MIDEM",
issn = "0352-9045",
publisher = "Society for Microelectronics, Electric Components and Materials",
number = "3",

}

TY - JOUR

T1 - Design of an active inductor based LNA in Silterra 130 nm CMOS process technology

AU - Bhuiyan, Mohammad Arif Sobhan

AU - Chew, Jia Xien

AU - Ibne Reaz, Md. Mamun

AU - Kamal, Noorfazila

PY - 2015/9/1

Y1 - 2015/9/1

N2 - In this paper, an active inductor based CMOS low noise amplifier (LNA) has been illustrated for 2.4 GHz ISM band RF receivers. The proposed LNA has three stages: the common gate amplifier, the active inductor and the output buffer. The LNA is designed in Silterra 130-nm CMOS process. It operates at 1.2V supply voltage and exhibit a high gain (S21) of 33dB and reverse isolation (S12) of -33.1dB. The power dissipation of the LNA is only 1.51mW with 8.51 dB noise figure and 35.5dB IIP3. In the proposed LNA, active inductor circuit replaces the usual passive spiral inductor to keep the size of the chip area at 0.0004mm2. Such an LNA will be a better choice for high performance, fully integrated, low cost and low power RF receivers.

AB - In this paper, an active inductor based CMOS low noise amplifier (LNA) has been illustrated for 2.4 GHz ISM band RF receivers. The proposed LNA has three stages: the common gate amplifier, the active inductor and the output buffer. The LNA is designed in Silterra 130-nm CMOS process. It operates at 1.2V supply voltage and exhibit a high gain (S21) of 33dB and reverse isolation (S12) of -33.1dB. The power dissipation of the LNA is only 1.51mW with 8.51 dB noise figure and 35.5dB IIP3. In the proposed LNA, active inductor circuit replaces the usual passive spiral inductor to keep the size of the chip area at 0.0004mm2. Such an LNA will be a better choice for high performance, fully integrated, low cost and low power RF receivers.

KW - Active inductor

KW - CMOS

KW - LNA

KW - RF

UR - http://www.scopus.com/inward/record.url?scp=85000835139&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85000835139&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:85000835139

VL - 45

SP - 188

EP - 194

JO - Informacije MIDEM

JF - Informacije MIDEM

SN - 0352-9045

IS - 3

ER -