Design of an 8-cell dual port SRAM in 0.18-um CMOS technology

Mohammad Mahdi Ariannejad, Md. Mamun Ibne Reaz, Md Syedul Amin, Fazida Hanim Hashim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Low power and low area Static Random Access Memory (SRAM) is essential for System onChip (SoC) technology. Dual-Port (DP) SRAM greatly reduces the power consumption by full current-mode techniques for read/write operation and the area by using Single-Port (SP) cell. An 8 bit DP-SRAM is proposed in this study. Negative bit-line technique during writehas been utilized for write-assist solutions. Negative voltage is generated on-chip usingcapacitive coupling. The proposed circuit design topology does not affect the read operation for bit interleaved architectures enabling high-speed operation. Designed in 0.18-um CMOS process, the area is only 1.2 times of the SP-SRAM and its power is 1.3 times of theSP-SRAM when the two ports simultaneously work at the same frequency. Simulation results and comparative study of the present scheme with state of-the art conventional schemes proposed in the literature for 45 nm CMOS technology show that the proposed scheme is superior in terms of process-variations impact, area overhead, timings and dynamic power consumption. The proposed negative bit-line technique can be used to improve the write abilityof 6 T Single-Port (SP) as well as 8 T DP and other multiport SRAM cells.

Original languageEnglish
Pages (from-to)2565-2568
Number of pages4
JournalResearch Journal of Applied Sciences, Engineering and Technology
Volume5
Issue number8
Publication statusPublished - 2013

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Data storage equipment
Electric power utilization
Topology
Networks (circuits)
Electric potential

Keywords

  • Demultiplexer
  • Memory cell
  • Negative bit-line
  • SRAM
  • Tri-state buffer

ASJC Scopus subject areas

  • Engineering(all)
  • Computer Science(all)

Cite this

Design of an 8-cell dual port SRAM in 0.18-um CMOS technology. / Ariannejad, Mohammad Mahdi; Ibne Reaz, Md. Mamun; Syedul Amin, Md; Hashim, Fazida Hanim.

In: Research Journal of Applied Sciences, Engineering and Technology, Vol. 5, No. 8, 2013, p. 2565-2568.

Research output: Contribution to journalArticle

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