Design and simulation of two-dimensional (2D) Gallium Nitride (GaN) photonic crystal on sapphire

Nur Dalila Mohd Zamani, Mohd Nuriman Nawi, Sahbudin Shaari, Burhanuddin Yeop Majlis, Md Zain Ahmad Rifqi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, a study of two-dimensional (2D) photonic crystal (PhC) cavities on a triangular photonic crystal lattice on Gallium Nitride have been demonstrated by using the 2D Finite Different Time Domain (FDTD) method. The resonant wavelength and quality factor (Q-factor) of designed PhC structures were studied. The forbidden region or stopband observed are between 420 to 520 nm. Therefore, the resonant wavelength of GaN-based PhC cavity was observed at \sim460 nm for H1 and L3 cavity. Both results show a high Qfactor obtained and calculated with a value of 65 700 and 65 957 respectively.

Original languageEnglish
Title of host publication2018 IEEE 7th International Conference on Photonics, ICP 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538611876
DOIs
Publication statusPublished - 12 Nov 2018
Event7th IEEE International Conference on Photonics, ICP 2018 - Langkawi, Kedah, Malaysia
Duration: 9 Apr 201811 Apr 2018

Other

Other7th IEEE International Conference on Photonics, ICP 2018
CountryMalaysia
CityLangkawi, Kedah
Period9/4/1811/4/18

Fingerprint

Gallium nitride
gallium nitrides
Photonic crystals
Sapphire
sapphire
photonics
cavities
crystals
simulation
Wavelength
crystal lattices
Crystal lattices
wavelengths
Q factors
Crystal structure
crystal structure

Keywords

  • Blue laser
  • Cavity
  • FDTD
  • Gallium Nitride
  • Lab on chip
  • Photonic crystal
  • Two-dimensional
  • Visible light

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Signal Processing
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

Zamani, N. D. M., Nawi, M. N., Shaari, S., Yeop Majlis, B., & Ahmad Rifqi, M. Z. (2018). Design and simulation of two-dimensional (2D) Gallium Nitride (GaN) photonic crystal on sapphire. In 2018 IEEE 7th International Conference on Photonics, ICP 2018 [8533165] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICP.2018.8533165

Design and simulation of two-dimensional (2D) Gallium Nitride (GaN) photonic crystal on sapphire. / Zamani, Nur Dalila Mohd; Nawi, Mohd Nuriman; Shaari, Sahbudin; Yeop Majlis, Burhanuddin; Ahmad Rifqi, Md Zain.

2018 IEEE 7th International Conference on Photonics, ICP 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8533165.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zamani, NDM, Nawi, MN, Shaari, S, Yeop Majlis, B & Ahmad Rifqi, MZ 2018, Design and simulation of two-dimensional (2D) Gallium Nitride (GaN) photonic crystal on sapphire. in 2018 IEEE 7th International Conference on Photonics, ICP 2018., 8533165, Institute of Electrical and Electronics Engineers Inc., 7th IEEE International Conference on Photonics, ICP 2018, Langkawi, Kedah, Malaysia, 9/4/18. https://doi.org/10.1109/ICP.2018.8533165
Zamani NDM, Nawi MN, Shaari S, Yeop Majlis B, Ahmad Rifqi MZ. Design and simulation of two-dimensional (2D) Gallium Nitride (GaN) photonic crystal on sapphire. In 2018 IEEE 7th International Conference on Photonics, ICP 2018. Institute of Electrical and Electronics Engineers Inc. 2018. 8533165 https://doi.org/10.1109/ICP.2018.8533165
Zamani, Nur Dalila Mohd ; Nawi, Mohd Nuriman ; Shaari, Sahbudin ; Yeop Majlis, Burhanuddin ; Ahmad Rifqi, Md Zain. / Design and simulation of two-dimensional (2D) Gallium Nitride (GaN) photonic crystal on sapphire. 2018 IEEE 7th International Conference on Photonics, ICP 2018. Institute of Electrical and Electronics Engineers Inc., 2018.
@inproceedings{38dc7d49992446eaafdb07601a28fc48,
title = "Design and simulation of two-dimensional (2D) Gallium Nitride (GaN) photonic crystal on sapphire",
abstract = "In this work, a study of two-dimensional (2D) photonic crystal (PhC) cavities on a triangular photonic crystal lattice on Gallium Nitride have been demonstrated by using the 2D Finite Different Time Domain (FDTD) method. The resonant wavelength and quality factor (Q-factor) of designed PhC structures were studied. The forbidden region or stopband observed are between 420 to 520 nm. Therefore, the resonant wavelength of GaN-based PhC cavity was observed at \sim460 nm for H1 and L3 cavity. Both results show a high Qfactor obtained and calculated with a value of 65 700 and 65 957 respectively.",
keywords = "Blue laser, Cavity, FDTD, Gallium Nitride, Lab on chip, Photonic crystal, Two-dimensional, Visible light",
author = "Zamani, {Nur Dalila Mohd} and Nawi, {Mohd Nuriman} and Sahbudin Shaari and {Yeop Majlis}, Burhanuddin and {Ahmad Rifqi}, {Md Zain}",
year = "2018",
month = "11",
day = "12",
doi = "10.1109/ICP.2018.8533165",
language = "English",
booktitle = "2018 IEEE 7th International Conference on Photonics, ICP 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

TY - GEN

T1 - Design and simulation of two-dimensional (2D) Gallium Nitride (GaN) photonic crystal on sapphire

AU - Zamani, Nur Dalila Mohd

AU - Nawi, Mohd Nuriman

AU - Shaari, Sahbudin

AU - Yeop Majlis, Burhanuddin

AU - Ahmad Rifqi, Md Zain

PY - 2018/11/12

Y1 - 2018/11/12

N2 - In this work, a study of two-dimensional (2D) photonic crystal (PhC) cavities on a triangular photonic crystal lattice on Gallium Nitride have been demonstrated by using the 2D Finite Different Time Domain (FDTD) method. The resonant wavelength and quality factor (Q-factor) of designed PhC structures were studied. The forbidden region or stopband observed are between 420 to 520 nm. Therefore, the resonant wavelength of GaN-based PhC cavity was observed at \sim460 nm for H1 and L3 cavity. Both results show a high Qfactor obtained and calculated with a value of 65 700 and 65 957 respectively.

AB - In this work, a study of two-dimensional (2D) photonic crystal (PhC) cavities on a triangular photonic crystal lattice on Gallium Nitride have been demonstrated by using the 2D Finite Different Time Domain (FDTD) method. The resonant wavelength and quality factor (Q-factor) of designed PhC structures were studied. The forbidden region or stopband observed are between 420 to 520 nm. Therefore, the resonant wavelength of GaN-based PhC cavity was observed at \sim460 nm for H1 and L3 cavity. Both results show a high Qfactor obtained and calculated with a value of 65 700 and 65 957 respectively.

KW - Blue laser

KW - Cavity

KW - FDTD

KW - Gallium Nitride

KW - Lab on chip

KW - Photonic crystal

KW - Two-dimensional

KW - Visible light

UR - http://www.scopus.com/inward/record.url?scp=85058458314&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85058458314&partnerID=8YFLogxK

U2 - 10.1109/ICP.2018.8533165

DO - 10.1109/ICP.2018.8533165

M3 - Conference contribution

BT - 2018 IEEE 7th International Conference on Photonics, ICP 2018

PB - Institute of Electrical and Electronics Engineers Inc.

ER -