Design and fabrication of GaAs microwave monolithic integrated circuits using 0.2 μm GMMT PHEMT foundry process

Burhanuddin Yeop Majlis, Azzemi Ariffin, Abd Fatah Awang Mat, Salizul Jaafar, Suhandi Bujang, Moha Razman Yahya

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

A number of microwave monolithic integrated circuits (MMIC) with operating frequencies from L to X band have been fabricated using GMMT foundry. All circuits were designed using MMIC CAD Series IV Libra on PC and workstation. The circuit functions include a range of TWA, LNA, wide band amplifiers, switches, mixers, oscillators, four bits attenuator, phase shifter and power amplifier. Fabrication was done on 3 GaAs wafer using GMMT PHEMT process, with 0.2 μm gate length, via holes through the substrate, MIM nitride and polyimide capacitors and is fully protected by silicon nitride passivation.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages229-231
Number of pages3
Publication statusPublished - 1998
EventProceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98) - Bangi, Malaysia
Duration: 24 Nov 199826 Nov 1998

Other

OtherProceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98)
CityBangi, Malaysia
Period24/11/9826/11/98

Fingerprint

Monolithic microwave integrated circuits
Foundries
Broadband amplifiers
Fabrication
Mixer circuits
Computer workstations
Networks (circuits)
Phase shifters
Silicon nitride
Power amplifiers
Passivation
Polyimides
Nitrides
Computer aided design
Capacitors
Switches
Substrates

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yeop Majlis, B., Ariffin, A., Mat, A. F. A., Jaafar, S., Bujang, S., & Yahya, M. R. (1998). Design and fabrication of GaAs microwave monolithic integrated circuits using 0.2 μm GMMT PHEMT foundry process. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 229-231). Piscataway, NJ, United States: IEEE.

Design and fabrication of GaAs microwave monolithic integrated circuits using 0.2 μm GMMT PHEMT foundry process. / Yeop Majlis, Burhanuddin; Ariffin, Azzemi; Mat, Abd Fatah Awang; Jaafar, Salizul; Bujang, Suhandi; Yahya, Moha Razman.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Piscataway, NJ, United States : IEEE, 1998. p. 229-231.

Research output: Chapter in Book/Report/Conference proceedingChapter

Yeop Majlis, B, Ariffin, A, Mat, AFA, Jaafar, S, Bujang, S & Yahya, MR 1998, Design and fabrication of GaAs microwave monolithic integrated circuits using 0.2 μm GMMT PHEMT foundry process. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. IEEE, Piscataway, NJ, United States, pp. 229-231, Proceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98), Bangi, Malaysia, 24/11/98.
Yeop Majlis B, Ariffin A, Mat AFA, Jaafar S, Bujang S, Yahya MR. Design and fabrication of GaAs microwave monolithic integrated circuits using 0.2 μm GMMT PHEMT foundry process. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Piscataway, NJ, United States: IEEE. 1998. p. 229-231
Yeop Majlis, Burhanuddin ; Ariffin, Azzemi ; Mat, Abd Fatah Awang ; Jaafar, Salizul ; Bujang, Suhandi ; Yahya, Moha Razman. / Design and fabrication of GaAs microwave monolithic integrated circuits using 0.2 μm GMMT PHEMT foundry process. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Piscataway, NJ, United States : IEEE, 1998. pp. 229-231
@inbook{a5fe6cd59a5b44928d20dee76073a44c,
title = "Design and fabrication of GaAs microwave monolithic integrated circuits using 0.2 μm GMMT PHEMT foundry process",
abstract = "A number of microwave monolithic integrated circuits (MMIC) with operating frequencies from L to X band have been fabricated using GMMT foundry. All circuits were designed using MMIC CAD Series IV Libra on PC and workstation. The circuit functions include a range of TWA, LNA, wide band amplifiers, switches, mixers, oscillators, four bits attenuator, phase shifter and power amplifier. Fabrication was done on 3 GaAs wafer using GMMT PHEMT process, with 0.2 μm gate length, via holes through the substrate, MIM nitride and polyimide capacitors and is fully protected by silicon nitride passivation.",
author = "{Yeop Majlis}, Burhanuddin and Azzemi Ariffin and Mat, {Abd Fatah Awang} and Salizul Jaafar and Suhandi Bujang and Yahya, {Moha Razman}",
year = "1998",
language = "English",
pages = "229--231",
booktitle = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",
publisher = "IEEE",

}

TY - CHAP

T1 - Design and fabrication of GaAs microwave monolithic integrated circuits using 0.2 μm GMMT PHEMT foundry process

AU - Yeop Majlis, Burhanuddin

AU - Ariffin, Azzemi

AU - Mat, Abd Fatah Awang

AU - Jaafar, Salizul

AU - Bujang, Suhandi

AU - Yahya, Moha Razman

PY - 1998

Y1 - 1998

N2 - A number of microwave monolithic integrated circuits (MMIC) with operating frequencies from L to X band have been fabricated using GMMT foundry. All circuits were designed using MMIC CAD Series IV Libra on PC and workstation. The circuit functions include a range of TWA, LNA, wide band amplifiers, switches, mixers, oscillators, four bits attenuator, phase shifter and power amplifier. Fabrication was done on 3 GaAs wafer using GMMT PHEMT process, with 0.2 μm gate length, via holes through the substrate, MIM nitride and polyimide capacitors and is fully protected by silicon nitride passivation.

AB - A number of microwave monolithic integrated circuits (MMIC) with operating frequencies from L to X band have been fabricated using GMMT foundry. All circuits were designed using MMIC CAD Series IV Libra on PC and workstation. The circuit functions include a range of TWA, LNA, wide band amplifiers, switches, mixers, oscillators, four bits attenuator, phase shifter and power amplifier. Fabrication was done on 3 GaAs wafer using GMMT PHEMT process, with 0.2 μm gate length, via holes through the substrate, MIM nitride and polyimide capacitors and is fully protected by silicon nitride passivation.

UR - http://www.scopus.com/inward/record.url?scp=0032231219&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032231219&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:0032231219

SP - 229

EP - 231

BT - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

PB - IEEE

CY - Piscataway, NJ, United States

ER -