Design and analysis of MEMS piezoresistive SiO2 cantilever-based sensor with stress concentration region for biosensing applications

Rosminazuin Ab Rahim, Badariah Bais, Burhanuddin Yeop Majlis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Abstract

This paper uses finite element method to obtain the optimal performance of piezoresistive microcantilever sensor by optimizing the geometrical dimension of both cantilever and piezoresistor. A 250 μm × 100 μm × 1 pm SiO2 cantilever integrated with 0.2 pm thick Si piezoresistor was used in this study. The sensor performance was measured on the basis of displacement sensitivity and surface stress sensitivity. The resulting maximum displacement value is about 0.7 nm for an applied load of 250 pN. A comparison between polySi and SiO2 cantilever has been carried out which shows the latter gives higher displacement for the same applied load. The sensor sensitivity was investigated by varying cantilever thickness as well as piezoresistor thickness. Simulation results show that the cantilever sensitivity is maximum when both the cantilever and the piezoresistor thicknesses are at minimum. Simulations were also conducted on the effects of incorporating various stress concentration region (SCR) designs at the bottom of the cantilevers. Cantilevers with incorporated stress concentration regions shows improved sensitivity over the cantilever without SCR. The cantilever with a rectangular shaped SCR extended up to the edge of the cantilever width yields a maximum Mises stress of 0.73 kPa compares to the other designs. For the same design, the cantilever with minimum SCR thickness of 0.2 pm yields maximum stress which results in maximum sensitivity.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Pages211-215
Number of pages5
DOIs
Publication statusPublished - 2008
Event2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008 - Johor Bahru, Johor
Duration: 25 Nov 200827 Nov 2008

Other

Other2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008
CityJohor Bahru, Johor
Period25/11/0827/11/08

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MEMS
Stress concentration
Sensors
Finite element method

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Design and analysis of MEMS piezoresistive SiO2 cantilever-based sensor with stress concentration region for biosensing applications. / Rahim, Rosminazuin Ab; Bais, Badariah; Yeop Majlis, Burhanuddin.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2008. p. 211-215 4770310.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Rahim, RA, Bais, B & Yeop Majlis, B 2008, Design and analysis of MEMS piezoresistive SiO2 cantilever-based sensor with stress concentration region for biosensing applications. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 4770310, pp. 211-215, 2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008, Johor Bahru, Johor, 25/11/08. https://doi.org/10.1109/SMELEC.2008.4770310
Rahim, Rosminazuin Ab ; Bais, Badariah ; Yeop Majlis, Burhanuddin. / Design and analysis of MEMS piezoresistive SiO2 cantilever-based sensor with stress concentration region for biosensing applications. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2008. pp. 211-215
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