Depth-dependent tetragonal distortion study of AlGaN epilayer thin film using rbs and channeling technique

G. Husnain, Ishaq Ahmad, Shu De Yao, H. M. Rafique, Ali Umar Akrajas, Chang Fu Dee

Research output: Contribution to journalArticle

Abstract

An epilayer of wide-band gap Al xGa 1-xN was grown on sapphire by metal organic chemical vapor deposition (MOCVD) method with a GaN buffer layer of thickness slightly greater than 1 μ m. Average composition of Al in the AlGaN layer is determined by Rutherford backscattering spectroscopy (RBS). Simulation of the random spectra reveals that the AlGaN layer has a composition of Al0.05Ga0.95N and a thickness of 200 nm. Low ratio of channeling and random spectra yields suggests good crystalline quality of ternary AlGaN epilayer. Tetragonal distortion (eT) caused by elastic strain in AlGaN is measured from channeling angular scans taken around an off-normal 12̄13 axis in the {101̄0} plane of the AlGaN layer. The resulting AlGaN is identified to be showing compressive strain at the interfacial layer and the magnitude of the stress reduces towards the near-surface layer. It can be expected from the results that a 550 nm thick, epitaxially grown, AlGaN layer on sapphire can be relaxed completely (eT = 0).

Original languageEnglish
Article number1250086
JournalModern Physics Letters B
Volume26
Issue number14
DOIs
Publication statusPublished - 10 Jun 2012

Fingerprint

thin films
sapphire
metalorganic chemical vapor deposition
backscattering
surface layers
buffers
broadband
spectroscopy
simulation

Keywords

  • IIIV semiconductors
  • RBS and channeling
  • tetragonal distortion
  • thin film

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Statistical and Nonlinear Physics

Cite this

Depth-dependent tetragonal distortion study of AlGaN epilayer thin film using rbs and channeling technique. / Husnain, G.; Ahmad, Ishaq; Yao, Shu De; Rafique, H. M.; Akrajas, Ali Umar; Dee, Chang Fu.

In: Modern Physics Letters B, Vol. 26, No. 14, 1250086, 10.06.2012.

Research output: Contribution to journalArticle

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