Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors

Farhad Larki, Arash Dehzangi, Sawal Hamid Md Ali, Azman Jalar @ Jalil, Md. Shabiul Islam, Burhanuddin Yeop Majlis, Elias B. Saion, Mohd Nizar Hamidon, Sabar D. Hutagalung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The variation of electrical characteristics with nano size air gap variation between gates and channel of a pinch off lateral gate transistor were investigated using 3D Technology Computer Aided Design. It is found that smaller nanosize gaps which can be formed by approaching the lateral gates to the channel can improve the switching performance of the device significantly. Devices with different air gap demonstrate same on state current and maximum transconductance of 0.05 μS, however the on/off current ratio (ION/IOFF) is varied by three orders of magnitude. The parameters such as electric field and band energy variation are investigated in order to explain the variation of electrical characteristics by air gap variation.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages170-173
Number of pages4
ISBN (Print)9781479957606
DOIs
Publication statusPublished - 10 Oct 2014
Event11th IEEE International Conference on Semiconductor Electronics, ICSE 2014 - Kuala Lumpur
Duration: 27 Aug 201429 Aug 2014

Other

Other11th IEEE International Conference on Semiconductor Electronics, ICSE 2014
CityKuala Lumpur
Period27/8/1429/8/14

Fingerprint

Transistors
Air
Transconductance
Band structure
Computer aided design
Electric fields

Keywords

  • Air Gap
  • Junctionless Transistor (JLT)
  • Lateral gate (LG)
  • TCAD Simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Larki, F., Dehzangi, A., Md Ali, S. H., Jalar @ Jalil, A., Islam, M. S., Yeop Majlis, B., ... Hutagalung, S. D. (2014). Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 170-173). [6920823] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMELEC.2014.6920823

Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors. / Larki, Farhad; Dehzangi, Arash; Md Ali, Sawal Hamid; Jalar @ Jalil, Azman; Islam, Md. Shabiul; Yeop Majlis, Burhanuddin; Saion, Elias B.; Hamidon, Mohd Nizar; Hutagalung, Sabar D.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc., 2014. p. 170-173 6920823.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Larki, F, Dehzangi, A, Md Ali, SH, Jalar @ Jalil, A, Islam, MS, Yeop Majlis, B, Saion, EB, Hamidon, MN & Hutagalung, SD 2014, Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 6920823, Institute of Electrical and Electronics Engineers Inc., pp. 170-173, 11th IEEE International Conference on Semiconductor Electronics, ICSE 2014, Kuala Lumpur, 27/8/14. https://doi.org/10.1109/SMELEC.2014.6920823
Larki F, Dehzangi A, Md Ali SH, Jalar @ Jalil A, Islam MS, Yeop Majlis B et al. Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc. 2014. p. 170-173. 6920823 https://doi.org/10.1109/SMELEC.2014.6920823
Larki, Farhad ; Dehzangi, Arash ; Md Ali, Sawal Hamid ; Jalar @ Jalil, Azman ; Islam, Md. Shabiul ; Yeop Majlis, Burhanuddin ; Saion, Elias B. ; Hamidon, Mohd Nizar ; Hutagalung, Sabar D. / Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 170-173
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