Dependence of radio frequency power on optical, chemical bonding and photoluminescence properties of hydrogenated amorphous carbon nitride films

Richard Ritikos, Goh Boon Tong, Rozidawati Awang, Siti Meriam Abdul Gani, Saadah Abdul Rahman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Hydrogenated amorphous carbon nitride films (a-CNx:H) were prepared in a radio-frequency plasma enhanced chemical vapour deposition (r.f. PECVD) system with a parallel-plate configuration. The gas sources of CH 4 and N2 were fixed at CH4:N2 ratio of 1:3. The films were grown on glass and Si substrates on the grounded electrode at 100°C. The effect of r.f. power (varied between 0.71 - 3.54 W/cm3) on the optical, infrared (IR) absorption spectra and photoluminescence (PL) spectra of the a-CNx:H films were studied. It was observed that the deposition rate increases linearly up to the r.f. power of 2.83 W/cm2, while the optical band gap (E04) decrease exponentially in the whole range. This is proposed to be the effect of an increase in nitrogen incorporation into the sp2 carbon clusters, as indicated by FTIR. The PL spectra consist of a band in the region of 2.10-2.40 eV, with peaks at approximately 2.23, 2.27 and 2.33 eV. The PL intensity of the films increases as the r.f. deposition power increases and is related to the increase of the sp2 clusters with increasing nitrogen incorporation.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Pages781-785
Number of pages5
DOIs
Publication statusPublished - 2006
Externally publishedYes
Event2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur
Duration: 29 Nov 20061 Dec 2006

Other

Other2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
CityKuala Lumpur
Period29/11/061/12/06

Fingerprint

Carbon nitride
Amorphous carbon
Photoluminescence
Carbon clusters
Nitrogen
Optical band gaps
Infrared absorption
Plasma enhanced chemical vapor deposition
Deposition rates
Absorption spectra
Glass
Electrodes
Substrates
Gases

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ritikos, R., Tong, G. B., Awang, R., Gani, S. M. A., & Rahman, S. A. (2006). Dependence of radio frequency power on optical, chemical bonding and photoluminescence properties of hydrogenated amorphous carbon nitride films. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 781-785). [4266726] https://doi.org/10.1109/SMELEC.2006.380743

Dependence of radio frequency power on optical, chemical bonding and photoluminescence properties of hydrogenated amorphous carbon nitride films. / Ritikos, Richard; Tong, Goh Boon; Awang, Rozidawati; Gani, Siti Meriam Abdul; Rahman, Saadah Abdul.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. p. 781-785 4266726.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ritikos, R, Tong, GB, Awang, R, Gani, SMA & Rahman, SA 2006, Dependence of radio frequency power on optical, chemical bonding and photoluminescence properties of hydrogenated amorphous carbon nitride films. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 4266726, pp. 781-785, 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006, Kuala Lumpur, 29/11/06. https://doi.org/10.1109/SMELEC.2006.380743
Ritikos R, Tong GB, Awang R, Gani SMA, Rahman SA. Dependence of radio frequency power on optical, chemical bonding and photoluminescence properties of hydrogenated amorphous carbon nitride films. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. p. 781-785. 4266726 https://doi.org/10.1109/SMELEC.2006.380743
Ritikos, Richard ; Tong, Goh Boon ; Awang, Rozidawati ; Gani, Siti Meriam Abdul ; Rahman, Saadah Abdul. / Dependence of radio frequency power on optical, chemical bonding and photoluminescence properties of hydrogenated amorphous carbon nitride films. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. pp. 781-785
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