Deep trenches in silicon structure using DRIE method with aluminum as an etching mask

Bahram Azizollah Ganji, Burhanuddin Yeop Majlis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

In this paper, we describe our experience with deep reactive ion etching (DRIE) of silicon to depths ranging from 10 μm to more than 250 μm for MEMS applications, including MEMS microphone. The DRIE was produced in oxygen-added sulfur hexafluoride (SF6) plasma, with sample cooling to cryogenic temperature. We used an inductively coupled plasma reactive ion etcher and Al mask. A 90 min etching experiments using etching gas SF 6 of 60 standard cubic centimeters per minutes (seem) with oxygen (13 seem) were performed by supplying RF power of 5 W to an ICP of 600 watts. For the Al mask, an etch rate of 5.44x103nm/min was achieved. By controlling the major parameters for plasma etch, anisotropic etch profiles and smooth etched surfaces, an etch rate of 2.85 microns per minute and a high selectivity of 5.24x105 to the Al etch mask have been obtained. An etch depth of 257 μm was demonstrated. Our experiments show that Al is a best mask material for very deep trenches etch.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Pages41-47
Number of pages7
DOIs
Publication statusPublished - 2006
Event2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur
Duration: 29 Nov 20061 Dec 2006

Other

Other2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
CityKuala Lumpur
Period29/11/061/12/06

Fingerprint

Reactive ion etching
Masks
Etching
Aluminum
Silicon
MEMS
Sulfur hexafluoride
Plasmas
Oxygen
Inductively coupled plasma
Microphones
Cryogenics
Experiments
Cooling
Ions
Gases
Temperature

Keywords

  • Al mask
  • Deep trench
  • DRIE
  • Etch rate
  • Selectivity
  • Silicon structure

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ganji, B. A., & Yeop Majlis, B. (2006). Deep trenches in silicon structure using DRIE method with aluminum as an etching mask. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 41-47). [4266566] https://doi.org/10.1109/SMELEC.2006.381016

Deep trenches in silicon structure using DRIE method with aluminum as an etching mask. / Ganji, Bahram Azizollah; Yeop Majlis, Burhanuddin.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. p. 41-47 4266566.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ganji, BA & Yeop Majlis, B 2006, Deep trenches in silicon structure using DRIE method with aluminum as an etching mask. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 4266566, pp. 41-47, 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006, Kuala Lumpur, 29/11/06. https://doi.org/10.1109/SMELEC.2006.381016
Ganji BA, Yeop Majlis B. Deep trenches in silicon structure using DRIE method with aluminum as an etching mask. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. p. 41-47. 4266566 https://doi.org/10.1109/SMELEC.2006.381016
Ganji, Bahram Azizollah ; Yeop Majlis, Burhanuddin. / Deep trenches in silicon structure using DRIE method with aluminum as an etching mask. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. pp. 41-47
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