Controlled growth of silicon nanowires

Y. Y. Wong, Muhammad Yahaya, Muhamad Mat Salleh, Burhanuddin Yeop Majlis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Using the solid-liquid-solid method, silicon nanowires were grown by annealing the gold-coated silicon substrates under the nitrogen flow. In this method, gold diffused into the silicon substrate upon heating and AuSi alloy formed at their interface. This alloy was melted when temperature increases above their eutectic point and percentage of Si presence in the mixture increased as heating continues. Rapid cooling occurred at the surface of these alloy melted when nitrogen gas was flowed into the chamber. This had caused the phase separation of the silicon from the surface of the alloy droplets and eventually self-arranged to form nanowires. Controlled growth of the nanowires was achieved by manipulating the annealing parameters. Relatively straight nanowires were produced by annealed the sample at 1000°C with nitrogen flow set to 1.5 liters per minute. The as-growth nanowires had diameters varied between 30 and 70nm. Heating duration was used to control the amount and lengths of the nanowires. Heating for 15 minutes produced less amount and shorter nanowires, while a 4-hour heating produced nanowires more than hundreds of microns long and with much larger amount.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsP. Lugli, L.B. Kish, J. Mateos
Pages285-292
Number of pages8
Volume5838
DOIs
Publication statusPublished - 2005
EventNanotechnology II - Seville, Spain
Duration: 9 May 200511 May 2005

Other

OtherNanotechnology II
CountrySpain
CitySeville
Period9/5/0511/5/05

Fingerprint

Nanowires
nanowires
Silicon
silicon
Heating
heating
Nitrogen
nitrogen
Gold
Annealing
gold
annealing
Substrates
Phase separation
eutectics
Eutectics
chambers
Cooling
cooling
Liquids

Keywords

  • Au-Si phase diagram
  • Gold catalyst
  • N ambient
  • Silicon nanowires
  • Solid-liquid-solid
  • Thermal anneal

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Wong, Y. Y., Yahaya, M., Mat Salleh, M., & Yeop Majlis, B. (2005). Controlled growth of silicon nanowires. In P. Lugli, L. B. Kish, & J. Mateos (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 5838, pp. 285-292). [57] https://doi.org/10.1117/12.608449

Controlled growth of silicon nanowires. / Wong, Y. Y.; Yahaya, Muhammad; Mat Salleh, Muhamad; Yeop Majlis, Burhanuddin.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / P. Lugli; L.B. Kish; J. Mateos. Vol. 5838 2005. p. 285-292 57.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wong, YY, Yahaya, M, Mat Salleh, M & Yeop Majlis, B 2005, Controlled growth of silicon nanowires. in P Lugli, LB Kish & J Mateos (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 5838, 57, pp. 285-292, Nanotechnology II, Seville, Spain, 9/5/05. https://doi.org/10.1117/12.608449
Wong YY, Yahaya M, Mat Salleh M, Yeop Majlis B. Controlled growth of silicon nanowires. In Lugli P, Kish LB, Mateos J, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 5838. 2005. p. 285-292. 57 https://doi.org/10.1117/12.608449
Wong, Y. Y. ; Yahaya, Muhammad ; Mat Salleh, Muhamad ; Yeop Majlis, Burhanuddin. / Controlled growth of silicon nanowires. Proceedings of SPIE - The International Society for Optical Engineering. editor / P. Lugli ; L.B. Kish ; J. Mateos. Vol. 5838 2005. pp. 285-292
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