Controlled Defects of Fluorine-incorporated ZnO Nanorods for Photovoltaic Enhancement

Hock Beng Lee, Riski Titian Ginting, Sin Tee Tan, Chun Hui Tan, Abdelelah Alshanableh, Hind Fadhil Oleiwi, Chi Chin Yap, Mohammad Hafizuddin Jumali, Muhammad Yahaya

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Anion passivation effect on metal-oxide nano-architecture offers a highly controllable platform for improving charge selectivity and extraction, with direct relevance to their implementation in hybrid solar cells. In current work, we demonstrated the incorporation of fluorine (F) as an anion dopant to address the defect-rich nature of ZnO nanorods (ZNR) and improve the feasibility of its role as electron acceptor. The detailed morphology evolution and defect engineering on ZNR were studied as a function of F-doping concentration (x). Specifically, the rod-shaped arrays of ZnO were transformed into taper-shaped arrays at high x. A hypsochromic shift was observed in optical energy band gap due to the Burstein-Moss effect. A substantial suppression on intrinsic defects in ZnO lattice directly epitomized the novel role of fluorine as an oxygen defect quencher. The results show that 10-FZNR/P3HT device exhibited two-fold higher power conversion efficiency than the pristine ZNR/P3HT device, primarily due to the reduced Schottky defects and charge transfer barrier. Essentially, the reported findings yielded insights on the functions of fluorine on (i) surface-OH passivation, (ii) oxygen vacancies (V o) occupation and (iii) lattice oxygen substitution, thereby enhancing the photo-physical processes, carrier mobility and concentration of FZNR based device.

Original languageEnglish
Article number32645
JournalScientific Reports
Volume6
DOIs
Publication statusPublished - 2 Sep 2016

Fingerprint

nanorods
fluorine
augmentation
defects
passivity
oxygen
anions
Bryophytes
tapering
carrier mobility
occupation
energy bands
metal oxides
rods
platforms
solar cells
selectivity
charge transfer
retarding
engineering

ASJC Scopus subject areas

  • General

Cite this

Lee, H. B., Ginting, R. T., Tan, S. T., Tan, C. H., Alshanableh, A., Oleiwi, H. F., ... Yahaya, M. (2016). Controlled Defects of Fluorine-incorporated ZnO Nanorods for Photovoltaic Enhancement. Scientific Reports, 6, [32645]. https://doi.org/10.1038/srep32645

Controlled Defects of Fluorine-incorporated ZnO Nanorods for Photovoltaic Enhancement. / Lee, Hock Beng; Ginting, Riski Titian; Tan, Sin Tee; Tan, Chun Hui; Alshanableh, Abdelelah; Oleiwi, Hind Fadhil; Yap, Chi Chin; Jumali, Mohammad Hafizuddin; Yahaya, Muhammad.

In: Scientific Reports, Vol. 6, 32645, 02.09.2016.

Research output: Contribution to journalArticle

Lee, HB, Ginting, RT, Tan, ST, Tan, CH, Alshanableh, A, Oleiwi, HF, Yap, CC, Jumali, MH & Yahaya, M 2016, 'Controlled Defects of Fluorine-incorporated ZnO Nanorods for Photovoltaic Enhancement', Scientific Reports, vol. 6, 32645. https://doi.org/10.1038/srep32645
Lee HB, Ginting RT, Tan ST, Tan CH, Alshanableh A, Oleiwi HF et al. Controlled Defects of Fluorine-incorporated ZnO Nanorods for Photovoltaic Enhancement. Scientific Reports. 2016 Sep 2;6. 32645. https://doi.org/10.1038/srep32645
Lee, Hock Beng ; Ginting, Riski Titian ; Tan, Sin Tee ; Tan, Chun Hui ; Alshanableh, Abdelelah ; Oleiwi, Hind Fadhil ; Yap, Chi Chin ; Jumali, Mohammad Hafizuddin ; Yahaya, Muhammad. / Controlled Defects of Fluorine-incorporated ZnO Nanorods for Photovoltaic Enhancement. In: Scientific Reports. 2016 ; Vol. 6.
@article{ce2ca57f315b431cb918b66b48c26f2d,
title = "Controlled Defects of Fluorine-incorporated ZnO Nanorods for Photovoltaic Enhancement",
abstract = "Anion passivation effect on metal-oxide nano-architecture offers a highly controllable platform for improving charge selectivity and extraction, with direct relevance to their implementation in hybrid solar cells. In current work, we demonstrated the incorporation of fluorine (F) as an anion dopant to address the defect-rich nature of ZnO nanorods (ZNR) and improve the feasibility of its role as electron acceptor. The detailed morphology evolution and defect engineering on ZNR were studied as a function of F-doping concentration (x). Specifically, the rod-shaped arrays of ZnO were transformed into taper-shaped arrays at high x. A hypsochromic shift was observed in optical energy band gap due to the Burstein-Moss effect. A substantial suppression on intrinsic defects in ZnO lattice directly epitomized the novel role of fluorine as an oxygen defect quencher. The results show that 10-FZNR/P3HT device exhibited two-fold higher power conversion efficiency than the pristine ZNR/P3HT device, primarily due to the reduced Schottky defects and charge transfer barrier. Essentially, the reported findings yielded insights on the functions of fluorine on (i) surface-OH passivation, (ii) oxygen vacancies (V o) occupation and (iii) lattice oxygen substitution, thereby enhancing the photo-physical processes, carrier mobility and concentration of FZNR based device.",
author = "Lee, {Hock Beng} and Ginting, {Riski Titian} and Tan, {Sin Tee} and Tan, {Chun Hui} and Abdelelah Alshanableh and Oleiwi, {Hind Fadhil} and Yap, {Chi Chin} and Jumali, {Mohammad Hafizuddin} and Muhammad Yahaya",
year = "2016",
month = "9",
day = "2",
doi = "10.1038/srep32645",
language = "English",
volume = "6",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",

}

TY - JOUR

T1 - Controlled Defects of Fluorine-incorporated ZnO Nanorods for Photovoltaic Enhancement

AU - Lee, Hock Beng

AU - Ginting, Riski Titian

AU - Tan, Sin Tee

AU - Tan, Chun Hui

AU - Alshanableh, Abdelelah

AU - Oleiwi, Hind Fadhil

AU - Yap, Chi Chin

AU - Jumali, Mohammad Hafizuddin

AU - Yahaya, Muhammad

PY - 2016/9/2

Y1 - 2016/9/2

N2 - Anion passivation effect on metal-oxide nano-architecture offers a highly controllable platform for improving charge selectivity and extraction, with direct relevance to their implementation in hybrid solar cells. In current work, we demonstrated the incorporation of fluorine (F) as an anion dopant to address the defect-rich nature of ZnO nanorods (ZNR) and improve the feasibility of its role as electron acceptor. The detailed morphology evolution and defect engineering on ZNR were studied as a function of F-doping concentration (x). Specifically, the rod-shaped arrays of ZnO were transformed into taper-shaped arrays at high x. A hypsochromic shift was observed in optical energy band gap due to the Burstein-Moss effect. A substantial suppression on intrinsic defects in ZnO lattice directly epitomized the novel role of fluorine as an oxygen defect quencher. The results show that 10-FZNR/P3HT device exhibited two-fold higher power conversion efficiency than the pristine ZNR/P3HT device, primarily due to the reduced Schottky defects and charge transfer barrier. Essentially, the reported findings yielded insights on the functions of fluorine on (i) surface-OH passivation, (ii) oxygen vacancies (V o) occupation and (iii) lattice oxygen substitution, thereby enhancing the photo-physical processes, carrier mobility and concentration of FZNR based device.

AB - Anion passivation effect on metal-oxide nano-architecture offers a highly controllable platform for improving charge selectivity and extraction, with direct relevance to their implementation in hybrid solar cells. In current work, we demonstrated the incorporation of fluorine (F) as an anion dopant to address the defect-rich nature of ZnO nanorods (ZNR) and improve the feasibility of its role as electron acceptor. The detailed morphology evolution and defect engineering on ZNR were studied as a function of F-doping concentration (x). Specifically, the rod-shaped arrays of ZnO were transformed into taper-shaped arrays at high x. A hypsochromic shift was observed in optical energy band gap due to the Burstein-Moss effect. A substantial suppression on intrinsic defects in ZnO lattice directly epitomized the novel role of fluorine as an oxygen defect quencher. The results show that 10-FZNR/P3HT device exhibited two-fold higher power conversion efficiency than the pristine ZNR/P3HT device, primarily due to the reduced Schottky defects and charge transfer barrier. Essentially, the reported findings yielded insights on the functions of fluorine on (i) surface-OH passivation, (ii) oxygen vacancies (V o) occupation and (iii) lattice oxygen substitution, thereby enhancing the photo-physical processes, carrier mobility and concentration of FZNR based device.

UR - http://www.scopus.com/inward/record.url?scp=84986277895&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84986277895&partnerID=8YFLogxK

U2 - 10.1038/srep32645

DO - 10.1038/srep32645

M3 - Article

AN - SCOPUS:84986277895

VL - 6

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

M1 - 32645

ER -