Conducting Sb-doped SnO2 as gas sensor

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The Sb-doped SnO2 thin films have been developed for gas sensors applications. The mechanism of sensing is based on the absorption and desorption of gases on the films surface that change the electrical resistivity of the films. Thin films of SnO2 were prepared on the glass slide substrates by spray pyrolysis method. The films in the range of 2000-5000 angstroms are very sensitive to O2 and CO2 and less sensitive to N2 gas. The basic principles of the mechanism of action will be described in details.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages229-233
Number of pages5
Publication statusPublished - 1997
EventProceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE - Penang, Malaysia
Duration: 26 Nov 199628 Nov 1996

Other

OtherProceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE
CityPenang, Malaysia
Period26/11/9628/11/96

Fingerprint

Chemical sensors
Thin films
Spray pyrolysis
Gases
Desorption
Glass
Substrates

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Marlianto, E., Yahaya, M., & Mat Salleh, M. (1997). Conducting Sb-doped SnO2 as gas sensor. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 229-233). Piscataway, NJ, United States: IEEE.

Conducting Sb-doped SnO2 as gas sensor. / Marlianto, Eddy; Yahaya, Muhammad; Mat Salleh, Muhamad.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Piscataway, NJ, United States : IEEE, 1997. p. 229-233.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Marlianto, E, Yahaya, M & Mat Salleh, M 1997, Conducting Sb-doped SnO2 as gas sensor. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. IEEE, Piscataway, NJ, United States, pp. 229-233, Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE, Penang, Malaysia, 26/11/96.
Marlianto E, Yahaya M, Mat Salleh M. Conducting Sb-doped SnO2 as gas sensor. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Piscataway, NJ, United States: IEEE. 1997. p. 229-233
Marlianto, Eddy ; Yahaya, Muhammad ; Mat Salleh, Muhamad. / Conducting Sb-doped SnO2 as gas sensor. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Piscataway, NJ, United States : IEEE, 1997. pp. 229-233
@inproceedings{517440efd0bd4c65a957795ca1ebecdd,
title = "Conducting Sb-doped SnO2 as gas sensor",
abstract = "The Sb-doped SnO2 thin films have been developed for gas sensors applications. The mechanism of sensing is based on the absorption and desorption of gases on the films surface that change the electrical resistivity of the films. Thin films of SnO2 were prepared on the glass slide substrates by spray pyrolysis method. The films in the range of 2000-5000 angstroms are very sensitive to O2 and CO2 and less sensitive to N2 gas. The basic principles of the mechanism of action will be described in details.",
author = "Eddy Marlianto and Muhammad Yahaya and {Mat Salleh}, Muhamad",
year = "1997",
language = "English",
pages = "229--233",
booktitle = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",
publisher = "IEEE",

}

TY - GEN

T1 - Conducting Sb-doped SnO2 as gas sensor

AU - Marlianto, Eddy

AU - Yahaya, Muhammad

AU - Mat Salleh, Muhamad

PY - 1997

Y1 - 1997

N2 - The Sb-doped SnO2 thin films have been developed for gas sensors applications. The mechanism of sensing is based on the absorption and desorption of gases on the films surface that change the electrical resistivity of the films. Thin films of SnO2 were prepared on the glass slide substrates by spray pyrolysis method. The films in the range of 2000-5000 angstroms are very sensitive to O2 and CO2 and less sensitive to N2 gas. The basic principles of the mechanism of action will be described in details.

AB - The Sb-doped SnO2 thin films have been developed for gas sensors applications. The mechanism of sensing is based on the absorption and desorption of gases on the films surface that change the electrical resistivity of the films. Thin films of SnO2 were prepared on the glass slide substrates by spray pyrolysis method. The films in the range of 2000-5000 angstroms are very sensitive to O2 and CO2 and less sensitive to N2 gas. The basic principles of the mechanism of action will be described in details.

UR - http://www.scopus.com/inward/record.url?scp=0030675377&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030675377&partnerID=8YFLogxK

M3 - Conference contribution

SP - 229

EP - 233

BT - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

PB - IEEE

CY - Piscataway, NJ, United States

ER -