Concentration-dependent minority carrier lifetime in an In 0.53Ga0.47As interdigitated lateral PIN photodiode model based on spin-on chemical fabrication methodology

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The fitted parameters for the analytic function used to specify the doping dependence of minority carrier lifetimes for In0.53Ga 0.47As (InGaAs) is described in this paper. This model together with other carrier models was used to develop an interdigitated lateral PIN photodiode utilizing InGaAs as the absorbing layer. We propose the usage of spin-on chemicals such as spin-on dopants and spin-on glass to form the p+ wells, n+ wells and the surface passivation layer of the device hence providing a cheap and easy solution versus the conventional epitaxial growth methodology. The modeled device achieved dark currents of 0.21nA and capacitance of 2.87nF at an operating voltage of 5V. Optical illumination at a wavelength of 1550nm and power of 10W/cm2 enabled the device to achieve responsivity of 0.56A/W and external quantum efficiency of 44%. The -3dB frequency response of the device was at 8.93GHz and signal-to-noise ratio is 36dB. The developed device shows close correlation with experimentally developed devices developed using other fabrication methodologies. The results of this work would be useful in the thorough development of InGaAs-based devices based on spin-on chemical fabrication methodology using commercial device simulation packages.

Original languageEnglish
Pages (from-to)465-477
Number of pages13
JournalInternational Journal of Numerical Modelling: Electronic Networks, Devices and Fields
Volume24
Issue number5
DOIs
Publication statusPublished - Sep 2011

Fingerprint

Carrier lifetime
Photodiode
Photodiodes
Lateral
Lifetime
Fabrication
Doping (additives)
Model-based
Methodology
Dependent
Dark currents
Quantum efficiency
Epitaxial growth
Passivation
Frequency response
Signal to noise ratio
Capacitance
Lighting
Glass
Wavelength

Keywords

  • carrier lifetime
  • InGaAs
  • interdigitated
  • lateral
  • PIN photodiode
  • spin-on chemicals

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

Cite this

@article{e144340b03ee4f80a158fcb8c719fae5,
title = "Concentration-dependent minority carrier lifetime in an In 0.53Ga0.47As interdigitated lateral PIN photodiode model based on spin-on chemical fabrication methodology",
abstract = "The fitted parameters for the analytic function used to specify the doping dependence of minority carrier lifetimes for In0.53Ga 0.47As (InGaAs) is described in this paper. This model together with other carrier models was used to develop an interdigitated lateral PIN photodiode utilizing InGaAs as the absorbing layer. We propose the usage of spin-on chemicals such as spin-on dopants and spin-on glass to form the p+ wells, n+ wells and the surface passivation layer of the device hence providing a cheap and easy solution versus the conventional epitaxial growth methodology. The modeled device achieved dark currents of 0.21nA and capacitance of 2.87nF at an operating voltage of 5V. Optical illumination at a wavelength of 1550nm and power of 10W/cm2 enabled the device to achieve responsivity of 0.56A/W and external quantum efficiency of 44{\%}. The -3dB frequency response of the device was at 8.93GHz and signal-to-noise ratio is 36dB. The developed device shows close correlation with experimentally developed devices developed using other fabrication methodologies. The results of this work would be useful in the thorough development of InGaAs-based devices based on spin-on chemical fabrication methodology using commercial device simulation packages.",
keywords = "carrier lifetime, InGaAs, interdigitated, lateral, PIN photodiode, spin-on chemicals",
author = "{N V Visvanathan}, {P. Susthitha Menon} and K. Kandiah and Ehsan, {Abang Annuar} and S. Shaari",
year = "2011",
month = "9",
doi = "10.1002/jnm.792",
language = "English",
volume = "24",
pages = "465--477",
journal = "International Journal of Numerical Modelling: Electronic Networks, Devices and Fields",
issn = "0894-3370",
publisher = "John Wiley and Sons Ltd",
number = "5",

}

TY - JOUR

T1 - Concentration-dependent minority carrier lifetime in an In 0.53Ga0.47As interdigitated lateral PIN photodiode model based on spin-on chemical fabrication methodology

AU - N V Visvanathan, P. Susthitha Menon

AU - Kandiah, K.

AU - Ehsan, Abang Annuar

AU - Shaari, S.

PY - 2011/9

Y1 - 2011/9

N2 - The fitted parameters for the analytic function used to specify the doping dependence of minority carrier lifetimes for In0.53Ga 0.47As (InGaAs) is described in this paper. This model together with other carrier models was used to develop an interdigitated lateral PIN photodiode utilizing InGaAs as the absorbing layer. We propose the usage of spin-on chemicals such as spin-on dopants and spin-on glass to form the p+ wells, n+ wells and the surface passivation layer of the device hence providing a cheap and easy solution versus the conventional epitaxial growth methodology. The modeled device achieved dark currents of 0.21nA and capacitance of 2.87nF at an operating voltage of 5V. Optical illumination at a wavelength of 1550nm and power of 10W/cm2 enabled the device to achieve responsivity of 0.56A/W and external quantum efficiency of 44%. The -3dB frequency response of the device was at 8.93GHz and signal-to-noise ratio is 36dB. The developed device shows close correlation with experimentally developed devices developed using other fabrication methodologies. The results of this work would be useful in the thorough development of InGaAs-based devices based on spin-on chemical fabrication methodology using commercial device simulation packages.

AB - The fitted parameters for the analytic function used to specify the doping dependence of minority carrier lifetimes for In0.53Ga 0.47As (InGaAs) is described in this paper. This model together with other carrier models was used to develop an interdigitated lateral PIN photodiode utilizing InGaAs as the absorbing layer. We propose the usage of spin-on chemicals such as spin-on dopants and spin-on glass to form the p+ wells, n+ wells and the surface passivation layer of the device hence providing a cheap and easy solution versus the conventional epitaxial growth methodology. The modeled device achieved dark currents of 0.21nA and capacitance of 2.87nF at an operating voltage of 5V. Optical illumination at a wavelength of 1550nm and power of 10W/cm2 enabled the device to achieve responsivity of 0.56A/W and external quantum efficiency of 44%. The -3dB frequency response of the device was at 8.93GHz and signal-to-noise ratio is 36dB. The developed device shows close correlation with experimentally developed devices developed using other fabrication methodologies. The results of this work would be useful in the thorough development of InGaAs-based devices based on spin-on chemical fabrication methodology using commercial device simulation packages.

KW - carrier lifetime

KW - InGaAs

KW - interdigitated

KW - lateral

KW - PIN photodiode

KW - spin-on chemicals

UR - http://www.scopus.com/inward/record.url?scp=80051523659&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80051523659&partnerID=8YFLogxK

U2 - 10.1002/jnm.792

DO - 10.1002/jnm.792

M3 - Article

AN - SCOPUS:80051523659

VL - 24

SP - 465

EP - 477

JO - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

JF - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

SN - 0894-3370

IS - 5

ER -