Concentration and temperature-dependent low-field mobility model for in0.53Ga0.47As interdigitated lateral pin PD

P. Susthitha Menon N V Visvanathan, K. Kandiah, S. Shaari

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The fitted parameters for the analytic function used to specify doping- and temperature-dependent low-field mobilities for In0.53Ga 0.47As is described in this paper. The developed model was compared with other mobility models as well as measured Hall data from periodical literature and very good agreement is observed. The result of this work was used to develop an In0.53Ga0.47As interdigitated lateral p-i-n photodiode (ILPP) model and good correlation was obtained when compared with the experimentally developed device. The results of this work would be useful in the development of In0.53Ga0.47As-based devices using commercial device simulation packages.

Original languageEnglish
Pages (from-to)303-309
Number of pages7
JournalIEICE Electronics Express
Volume5
Issue number9
DOIs
Publication statusPublished - 10 May 2008

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analytic functions
Photodiodes
Temperature
photodiodes
temperature
Doping (additives)
simulation

Keywords

  • InGaAs
  • Interdigitated
  • Lateral
  • Mobility
  • P-i-n
  • Photodiode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Concentration and temperature-dependent low-field mobility model for in0.53Ga0.47As interdigitated lateral pin PD. / N V Visvanathan, P. Susthitha Menon; Kandiah, K.; Shaari, S.

In: IEICE Electronics Express, Vol. 5, No. 9, 10.05.2008, p. 303-309.

Research output: Contribution to journalArticle

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